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SJ/T 11498-2015 English PDF

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SJ/T 11498-2015: Test method for measuring oxygen contamination in heavily doped silicon substrates by secondary ion mass spectrometry
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SJ/T 11498-2015English279 Add to Cart 3 days [Need to translate] Test method for measuring oxygen contamination in heavily doped silicon substrates by secondary ion mass spectrometry Valid SJ/T 11498-2015

PDF similar to SJ/T 11498-2015


Standard similar to SJ/T 11498-2015

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Basic data

Standard ID SJ/T 11498-2015 (SJ/T11498-2015)
Description (Translated English) Test method for measuring oxygen contamination in heavily doped silicon substrates by secondary ion mass spectrometry
Sector / Industry Electronics Industry Standard (Recommended)
Classification of Chinese Standard H82
Classification of International Standard 29.045
Word Count Estimation 12,174
Date of Issue 2015-04-30
Date of Implementation 2015-10-01
Quoted Standard GB/T 24580-2009
Regulation (derived from) Ministry of Industry and Information Technology Announcement (2015 No. 28)
Issuing agency(ies) Ministry of Industry and Information Technology
Summary This Standard specifies the use of secondary ion mass spectrometry (SINS) of heavily doped single-crystal silicon substrate in the total oxygen concentration of the test method. This Standard applies to boron, antimony, arsenic, phosphorus doping concentration <0.2% (1 �� 1020at �� cm-3) of the silicon material. Especially suitable for resistivity 0.0012�� �� cm ~ 1.0�� �� cm p-type silicon material and resistivity in 0.008�� �� cm ~ 0.2�� �� cm n-type silicon material.

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