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Database: 189759 (19 Oct 2025)
SJ/T 11396-2009 English PDF
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SJ/T 11396-2009
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The sapphire substrates for nitride based light-emitting diode
Obsolete
SJ/T 11396-2009
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Basic data
Standard ID
SJ/T 11396-2009 (SJ/T11396-2009)
Description (Translated English)
The sapphire substrates for nitride based light-emitting diode
Sector / Industry
Electronics Industry Standard (Recommended)
Classification of Chinese Standard
H83
Classification of International Standard
29.045
Word Count Estimation
16,154
Date of Issue
2009-11-17
Date of Implementation
2010-01-01
Quoted Standard
GB/T 1031-1995; GB/T 1554-1995; GB/T 1555; GB/T 2828.1-2003; GB/T 6618; GB/T 6619; GB/T 6620; GB/T 6621; GB/T 6624; GB/T 14264-1993; SJ 20744-1999
Regulation (derived from)
MIIT (2009) No. 62; industry standard filing Notice 2010 No. 1 (No. 121 overall)
Issuing agency(ies)
Ministry of Industry and Information Technology
Summary
This standard specifies the GaN-based light-emitting diode chip with a sapphire substrate technical requirements, test methods, inspection rules, marking requirements, packaging, transportation and storage requirements, and related processes and process environmental requirements.