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SJ 20858-2002 English PDF

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SJ 20858-2002: Measuring methods for electrical parameters of silicon carbide single crystal material
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Standard similar to SJ 20858-2002

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Basic data

Standard ID SJ 20858-2002 (SJ20858-2002)
Description (Translated English) Measuring methods for electrical parameters of silicon carbide single crystal material
Sector / Industry Electronics Industry Standard
Classification of Chinese Standard H82
Word Count Estimation 9,933
Date of Issue 2002-12-12
Date of Implementation 2003-05-01
Summary This standard specifies the silicon carbide single crystal material resistivity, Hall mobility testing methods. This standard applies to the temperature at 20 �� ~ 700 �� range of 4H-SiC, 6H-SiC single crystal materials such as low-resistivity silicon carbide resistivity, Hall mobility measurements.


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