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Database: 189760 (18 Oct 2025)
SJ/T 11493-2015 English PDF
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SJ/T 11493-2015
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Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry
Obsolete
SJ/T 11493-2015
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Basic data
Standard ID
SJ/T 11493-2015 (SJ/T11493-2015)
Description (Translated English)
Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry
Sector / Industry
Electronics Industry Standard (Recommended)
Classification of Chinese Standard
H82
Classification of International Standard
29.045
Word Count Estimation
12,176
Date of Issue
2015-04-30
Date of Implementation
2015-10-01
Quoted Standard
GB/T 24580-2009
Regulation (derived from)
Ministry of Industry and Information Technology Announcement (2015 No. 28)
Issuing agency(ies)
Ministry of Industry and Information Technology
Summary
This Standard specifies the secondary ion mass spectrometry (SIMS) test method for single crystal silicon substrate material, the total concentration of nitrogen. This Standard applies to antimony, arsenic, phosphorus doping concentration <0.2% (1 �� 1020at.cm-3) a single product sample, wherein the concentration of nitrogen is not less than 1 �� 1014at.cm-3.