|
US$259.00 ยท In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email.
GB/T 28275-2012: Silicon-based MEMS fabrication technology -- Specification for KOH etch process
Status: Valid
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 28275-2012 | English | 259 |
Add to Cart
|
3 days [Need to translate]
|
Silicon-based MEMS fabrication technology -- Specification for KOH etch process
| Valid |
GB/T 28275-2012
|
PDF similar to GB/T 28275-2012
Basic data | Standard ID | GB/T 28275-2012 (GB/T28275-2012) | | Description (Translated English) | Silicon-based MEMS fabrication technology -- Specification for KOH etch process | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L55 | | Classification of International Standard | 31.200 | | Word Count Estimation | 11,146 | | Quoted Standard | GB/T 26111-2010; GB/T 1031-2009; GB 50073-2001 | | Regulation (derived from) | National Standards Bulletin No. 9 of 2012 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the use of potassium hydroxide etch process for MEMS device fabrication process requirements to be followed. This standard applies to nitrogen hydroxide etching process and management. | GB/T 28275-2012: Silicon-based MEMS fabrication technology -- Specification for KOH etch process---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS31.200
L55
National Standards of People's Republic of China
Silicon MEMS Manufacturing Technology
KOH etching process specification
Issued on. 2012-05-11 2012-12-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard rule according to GB/T 1.1-2009 given draft.
This standard by the National MEMS Technology Standardization Technical Committee (SAC/TC336) and focal points.
This standard was drafted. Shanghai Institute of Microsystem and Information Technology, Chongqing University, Southeast University, China Electronic Science and Technology collection
Mission Institute of the forty-ninth, the machine Productivity Promotion Center.
The main drafters of this standard. Xia Weifeng, Xiong Bin, Feng, Ge Xiao Hong, Zhou recurrence, Yuling, He Xuefeng, Tian Lei, Liu Wei.
Silicon MEMS Manufacturing Technology
KOH etching process specification
1 Scope
This standard specifies the use of potassium hydroxide etch process performed MEMS device fabrication process requirements to be followed.
This standard applies to KOH etching process and management.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated edition applies to this article
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 26111-2010 micro-electromechanical systems (MEMS) technology terms
GB/T 1031-2009 Geometrical product specifications (GPS) Surface texture Profile method of surface roughness parameters and their values
GB 50073-2001 clean plant design specifications
3 Terms and Definitions
GB/T 26111-2010 defined and the following terms and definitions apply to this document.
3.1
Cleanliness cleanliness
Number of Units volume of air in a particle size to distinguish cleanliness.
3.2
Cleanroom cleanroom
Airborne particle concentration controlled room. Its construction and use should be induced to reduce indoor, generation and retention of particles. Other indoor
Relevant parameters such as temperature, humidity, pressure, etc. as required for control.
3.3
Wet etching wetetching
Utilization of material to be engraved can produce a chemical reaction solution or a thin film device structure etching technology.
Note. during wet etching, etching of part of the mask will not need to expose the rest, and then the material is immersed in the reaction solution can be divided to each.
Isotropic etching and anisotropic etching.
[GB/T 26111-2010, the definition 3.5.17]
3.4
Etchant escharotic
Corrosive effect of chemical substances.
3.5
Etchant etchant
The solution containing etchant.
Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 28275-2012_English be delivered?Answer: Upon your order, we will start to translate GB/T 28275-2012_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time. Question 2: Can I share the purchased PDF of GB/T 28275-2012_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 28275-2012_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet. Question 3: Does the price include tax/VAT?Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countriesQuestion 4: Do you accept my currency other than USD?Answer: Yes. If you need your currency to be printed on the invoice, please write an email to [email protected]. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.
|