|
US$349.00 · In stock Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 28276-2012: Silicon-based MEMS fabrication technology -- Specification for dissolved wafer process Status: Valid
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 28276-2012 | English | 349 |
Add to Cart
|
3 days [Need to translate]
|
Silicon-based MEMS fabrication technology -- Specification for dissolved wafer process
| Valid |
GB/T 28276-2012
|
PDF similar to GB/T 28276-2012
Basic data | Standard ID | GB/T 28276-2012 (GB/T28276-2012) | | Description (Translated English) | Silicon-based MEMS fabrication technology -- Specification for dissolved wafer process | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L55 | | Classification of International Standard | 31.200 | | Word Count Estimation | 15,169 | | Quoted Standard | GB 50073-2001; GB/T 19022-2003; GB/T 26111-2010 | | Regulation (derived from) | National Standards Bulletin No. 9 of 2012 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the use of bulk silicon chip solution for MEMS device fabrication process should follow the process requirements and process evaluation norms. This standard applies to bulk silicon chip technology solution processing and quality in |
GB/T 28276-2012: Silicon-based MEMS fabrication technology -- Specification for dissolved wafer process ---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS31.200
L55
National Standards of People's Republic of China
Silicon MEMS Manufacturing Technology
Bulk silicon melting process specification sheet
Issued on. 2012-05-11 2012-12-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Table of Contents
Preface Ⅰ
1 Scope 1
2 Normative references 1
3 Terms and definitions
4 Process 2
4.1 bulk silicon melting process sheet 2
4.2 Wafer Processing Process 2
4.3 glass process flow 3
4.4 silicon - glass bonding process flow sheet 4
5 processing technology skills 4
Process security conditions require 4 6
Personnel requirements 4 6.1
6.2 Environmental Requirements 4
Device Requirements 6.3 5
7 6 Raw materials
8 safe operation requires 6
8.1 Electrical Safety 6
8.2 Chemicals 6
8.3 exhaust 6
9 6 Inspection Process
9.1 General 6
9.2 Key process inspection 7
9.3 Final Inspection 8
Appendix A (informative) bulk silicon dissolving tablet key step test method 10
Foreword
This standard rule according to GB/T 1.1-2009 given draft.
This standard by the National MEMS Technology Standardization Technical Committee (SAC/TC336) and focal points.
This standard was drafted. China Electronics Technology Group Corporation 13th Research Institute, the machine on the Productivity Center, Peking University, Chinese Academy of Sciences
Sea Institute of Microsystem and Information Technology.
The main drafters of this standard. Cui Bo, Luo Rong, Liu Wei, Zhang Dacheng, Xiong Bin, Chen Hairong.
Silicon MEMS Manufacturing Technology
Bulk silicon melting process specification sheet
1 Scope
This standard specifies the use of bulk silicon dissolving tablet technology for MEMS device fabrication process to be followed in the evaluation process requirements and process specifications.
This standard applies to the processing and quality inspection bodies dissolved silicon chip technology.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated edition applies to this article
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB 50073-2001 clean plant design specifications
GB/T 19022-2003 Measurement management systems for measurement processes and measuring equipment
GB/T 26111-2010 micro-electromechanical systems (MEMS) technology terms
3 Terms and Definitions
GB/T 26111-2010 and GB/T 19022-2003 defined and the following terms and definitions apply to this document.
3.1
MEMS micro-electromechanicalsystem; MEMS
Key (part) feature sizes between submicron to submillimeter, optoelectronics and other machines to complete the system functions independently.
Note 1. microelectromechanical systems typically include micro-institutions, micro sensors, micro actuators, signal processing and control, communications interface circuits, and energy components.
Note 2. The micro-electromechanical systems often require multidisciplinary technology applications, a variety of areas such as mechanical, electrical, optical, biological, and other.
Note 3. MEMS mainly in the United States to use micro system is mainly used in Europe, micromechanical mainly used in Japan.
[GB/T 26111-2010, the definition 3.1.1]
3.2
Bulk micro-machined bulkmicromachining
Achieve micromachined micro structure by selectively removing a portion of the base material.
NOTE. bulk micromachining technology formula chemically etched to remove unnecessary portions of the substrate processing method using SiO2 or SiN mask to protect the table.
Surface is not etched. Boron doped layer may also stop the etching of the surface layer in the following sections.
[GB/T 26111-2010, the definition 3.5.16]
3.3
Bulk silicon dissolving tablet technology dissolvedwaferprocess
Heavy use of boron-doped silicon anisotropic etchant stop the corrosive effects of self-realization MEMS structure silicon processing technology.
Note. The bulk silicon melting process sheet glass as support material to form a MEMS structure on a heavily doped boron silicon through the use of dry etching by anodic
Bonding technology for sealing between the glass and silicon, and finally an anisotropic etching technique to remove excess silicon to achieve the release of the MEMS structure.
3.4
Etch-stop etchstop
Use etchant etching speed difference of different materials such etch stop layer on a particular material.
Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 28276-2012_English be delivered?Answer: Upon your order, we will start to translate GB/T 28276-2012_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time. Question 2: Can I share the purchased PDF of GB/T 28276-2012_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 28276-2012_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet. Question 3: Does the price include tax/VAT?Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countriesQuestion 4: Do you accept my currency other than USD?Answer: Yes. If you need your currency to be printed on the invoice, please write an email to [email protected]. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.
|