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GB/T 28277-2012: Silicon-based MEMS fabrication technology -- Measurement method of cutting and pull-press strength of micro bonding area
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 28277-2012 | English | 459 |
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Silicon-based MEMS fabrication technology -- Measurement method of cutting and pull-press strength of micro bonding area
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GB/T 28277-2012
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Basic data | Standard ID | GB/T 28277-2012 (GB/T28277-2012) | | Description (Translated English) | Silicon-based MEMS fabrication technology -- Measurement method of cutting and pull-press strength of micro bonding area | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L55 | | Classification of International Standard | 31.200 | | Word Count Estimation | 20,272 | | Quoted Standard | GB/T 26111-2010; GB/T 19022-2003 | | Regulation (derived from) | National Standards Bulletin No. 9 of 2012 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the silicon MEMS processing involved in the bonding region tiny bond strength testing requirements and test methods. This standard applies to the use of micro technology and related microfabrication technology to produce the tiny a | GB/T 28277-2012: Silicon-based MEMS fabrication technology -- Measurement method of cutting and pull-press strength of micro bonding area
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ICS31.200
L55
National Standards of People's Republic of China
Silicon MEMS Manufacturing Technology
Micro-bonding strength in tension and compression and shear zone detection method
Issued on. 2012-05-11 2012-12-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Table of Contents
Introduction Ⅲ
1 Scope 1
2 Normative references 1
3 Terms and definitions
4 requires 2
4.1 Detection structural design requirements 2
4.2 Preparation of samples structural requirements 4
4.3 detect environmental requirements 4
5 5 Detection
5.1 General 5
5.2 micro structural tension and compression bonding strength detection 5
5.3 micro structural shear bond strength detector 6
Appendix A (informative) detector design tension and compression fracture strength and size correspondence table 8
Annex B (informative) tension and compression detector test case structure 16
Foreword
This standard rule according to GB/T 1.1-2009 given draft.
This standard by the National MEMS Technology Standardization Technical Committee (SAC/TC336) and focal points.
This standard was drafted. Peking University, the machine on Productivity Center, China Electronics Technology Group Corporation 13th Research Institute, Chinese Academy of Sciences
Sea Institute of Microsystem and Information Technology, China Electronics Technology Group Institute of the forty-ninth.
The main drafters of this standard. DAR ES SALAAM, Wang Wei, Liu Wei, Yang Fang, Jiang forests, Cui Bo, Xiong Bin, Tian Lei.
Silicon MEMS Manufacturing Technology
Micro-bonding strength in tension and compression and shear zone detection method
1 Scope
This standard specifies the requirements and test methods for silicon-based MEMS process involved small bonding area bonding strength detection.
This standard applies to the use of small shear bond area of \u200b\u200bmicroelectronics technology and related manufacturing and microfabrication technology tension and compression strength test.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated edition applies to this article
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 26111-2010 micro-electromechanical systems (MEMS) technology terms and definitions
GB/T 19022-2003 Measurement management systems for measurement processes and measuring equipment
3 Terms and Definitions
GB/T 26111-2010 and GB/T 19022-2003 defined and the following terms and definitions apply to this document.
3.1
Bulk micro-machined bulkmicromachining
Achieve micromachined micro structure by selectively removing a portion of the base material.
NOTE. bulk micromachining process by chemically etching the substrate to remove the unnecessary portion of the processing method using SiO2 or Si3N4 mask to protect the table.
Surface is not etched. Boron-doped layer can also stop the etching of the surface layer in the following sections.
[GB/T 26111-2010, the definition 3.5.16]
3.2
Dry etching dryetching
Use may produce a physical and/or chemical reaction of the gas or plasma etching techniques.
Note. the reaction gas may react with the substrate and the electronic energy generated removing material to form the desired shape or size can be divided into dry etching utilizing a chemical reaction.
It should isotropic etching (plasma etching) and the use of direct physical etching reaction (ion etching).
[GB/T 26111-2010, the definition 3.5.18]
3.3
Wet etching wetetching
Utilization of material to be engraved can produce a chemical reaction solution or a thin film device structure etching technology.
Note. during wet etching, etching of part of the mask will not need to expose the rest, and then the material is immersed in the reaction solution can be divided to each.
Isotropic etching and anisotropic etching.
[GB/T 26111-2010, the definition 3.5.17]
3.4
Isotropic etching isotropicetching
Etching speed does not vary with the crystal to change direction or energy beam etching process.
[GB/T 26111-2010, the definition 3.5.19]
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