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GB/T 28274-2012: Silicon-based MEMS fabrication technology -- The basic regulation of layout design
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 28274-2012 | English | 279 |
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Silicon-based MEMS fabrication technology -- The basic regulation of layout design
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GB/T 28274-2012
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Basic data | Standard ID | GB/T 28274-2012 (GB/T28274-2012) | | Description (Translated English) | Silicon-based MEMS fabrication technology -- The basic regulation of layout design | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L55 | | Classification of International Standard | 31.200 | | Word Count Estimation | 12,193 | | Quoted Standard | GB/T 26111-2010 | | Regulation (derived from) | National Standards Bulletin No. 9 of 2012 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the micro- structure of machining, photolithography layout design graphic design should follow the basic rules. This standard applies to using contact single/double lithography, oxidation diffusion, chemical vapor deposition (CVD), | GB/T 28274-2012: Silicon-based MEMS fabrication technology -- The basic regulation of layout design
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS31.200
L55
National Standards of People's Republic of China
Silicon MEMS Manufacturing Technology
The basic layout design rules
Issued on. 2012-05-11 2012-12-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard rule according to GB/T 1.1-2009 given draft.
This standard by the National MEMS Technology Standardization Technical Committee (SAC/TC336) and focal points.
This standard was drafted. Peking University, the machine on Productivity Center, China Electronics Technology Group Corporation 13th Research Institute, Chinese Academy of Sciences
Sea Institute of Microsystem and Information Technology, Northwestern Polytechnical University.
The main drafters of this standard. DAR ES SALAAM, Wang Wei, Liu Wei, Yang Fang, Jiang forests, Cui Bo, Xiong Bin, QIAO Da-yong.
Silicon MEMS Manufacturing Technology
The basic layout design rules
1 Scope
This standard specifies the time microstructure processing, the basic rules of the lithographic layout design graphic design to be followed.
This standard applies to the use of contactless single/double-sided lithography, oxidation diffusion, chemical vapor deposition (CVD), physical vapor deposition (PVD), from
Injection, reactive ion etching (RIE), potassium hydroxide (KOH) etching silicon - glass aligned electrostatic binding, wheel and other basic process for dicing.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated edition applies to this article
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 26111-2010 micro-electromechanical systems (MEMS) technology terms
3 Terms and Definitions
GB/T 26111-2010 defined and the following terms and definitions apply to this document.
3.1
Double-sided lithography doublesidemaskalign
On one side of the substrate (A side), the substrate prepared with the other surface (B surface) of the resist pattern prior or traces patterned aligned relationship with certain
the process of.
3.2
Light version lightmask
A large area of \u200b\u200btranslucent lithograph.
3.3
Dark version darkmask
Large opaque lithograph.
3.4
Alignment marks alignmark
A step for aligning marks formed in different patterns.
4 lithographic alignment and bond alignment method
4.1 single-sided lithographic alignment method
By using tools such as lithography lithograph corresponding to the upper substrate on the graphic graphics aligned its work process shown in Figure 1.
Sided Lithography Alignment is patterned substrate surface is coated with a photoresist, photolithography equipment to existing graphics and graphics on a lithograph of the substrate
After registration, then by exposing and developing the photoresist on the substrate processed into a lithographic printing plate is consistent with the graphics, and the graphics have been aligned relationship with the substrate
Graphics.
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