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GB/T 30110-2013: Measuring methods of parameters of HgCdTe epilayers used for space infrared detectors
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Measuring methods of parameters of HgCdTe epilayers used for space infrared detectors
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GB/T 30110-2013
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Basic data | Standard ID | GB/T 30110-2013 (GB/T30110-2013) | | Description (Translated English) | Measuring methods of parameters of HgCdTe epilayers used for space infrared detectors | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 49.060 | | Word Count Estimation | 35,312 | | Quoted Standard | GB/T 1553-2009; GB/T 1555-2009; GB/T 4326-2006; GJB 548B-2005; GJB 1485; GJB 2712 | | Regulation (derived from) | National Standards Bulletin No. 25 of 2013 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the use of space HgCdTe infrared detector (HgCdTe) test methods and test equipment requirements epitaxial material performance parameters. This standard applies to space infrared detector test parameters sings with mercury cadmium | GB/T 30110-2013: Measuring methods of parameters of HgCdTe epilayers used for space infrared detectors
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Measuring methods of parameters of HgCdTe epilayers used for space infrared detectors
ICS 49.060
H80
National Standards of People's Republic of China
Space Infrared Detectors HgCdTe epitaxial material
Parameter Test Method
Issued on. 2013-12-17
2014-05-15 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Table of Contents
Preface Ⅰ
1 Scope 1
2 Normative references 1
3 Terms and definitions
4 Symbols and 3
5 material Parameter Test Method 4
5.1 component to the thickness of the test 4
5.2 8 crystal surface to the test
5.3 lattice constant test 9
5.4 surface roughness test 10
5.5 surface roughness test 12
5.6 Materials electrical parameters test 13
5.7 minority carrier lifetime test 16
5.8 dislocation density test 18
5.9 surface defect density test 20
5.10 X-ray double crystal diffraction peak half-width test 20
5.11 X-ray topography test 22
5.12 non-uniform material properties testing 23
Anti-radiation properties of materials under 6 space environment testing methods 24
6.1 Test conditions 24
6.2 anti-radiation material performance testing 24
7 precision material parameters, precision and uncertainty testing methods 24
8 Test Equipment Requirements 24
Optical constants in Appendix A (normative) Material 25
Appendix B (normative) longitudinal mercury cadmium telluride epitaxial material composition gradient of the transmittance and reflectance of Ra- Ta Calculation 26
Annex C (informative) Principle of laser interferometer 29
Annex D (informative) dislocation density measurements are the standard deviation and the mean etch pit counting relations 30
References 31
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
This standard and its application by the National Standardization Technical Committee on Space Sciences (SAC/TC312) centralized.
This standard was drafted. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Institute of China Electronics Technology Group XI, China Ordnance Engineering
Kunming Institute of Physics Group.
The main drafters of this standard. Yang Jianrong, Zhou Liqing, Wei Yanfeng, folding Lin Wei, Sun Shiwen, Chen Lu, Wang Jinyi, He Li.
Space Infrared Detectors HgCdTe epitaxial material
Parameter Test Method
1 Scope
This standard specifies the space infrared detectors with mercury cadmium telluride (HgCdTe) epitaxial material properties of test methods and test equipment
Claim.
This standard applies to space infrared detectors parameter test mercury cadmium telluride epitaxial material, other uses of mercury cadmium telluride epitaxial material parameters
Testing can refer to use.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 1553-2009 germanium and silicon minority carrier lifetime measurement - photoconductivity decay
GB/T 1555-2009 Determination of the semiconductor single crystal
GB/T 4326-2006 extrinsic semiconductor single crystals Hall mobility and Hall coefficient measurements
GJB548B-2005 test methods and procedures for microelectronics
Precision GJB1485 physical properties of materials testing methods, accuracy and uncertainty
Quality assurance requirements for measuring equipment GJB2712 Metrological confirmation system
3 Terms and Definitions
The following terms and definitions apply to this document.
3.1
Substrate substrate
Providing an epitaxial monocrystalline material surface atomic structure periodically arranged.
3.2
Epitaxial material epitaxialmaterial
Single crystal thin film material on a single crystal substrate by a gas and liquid phase growth method, etc. obtained.
3.3
LPE liquidphaseepitaxy; LPE
The semiconductor material dissolved in a solvent, to form a saturated solution, then this solution was coated on a saturated single crystal substrate, lowering the temperature,
Supersaturation, grown on a substrate of semiconductor single crystal thin layer of new technology along the substrate crystal axis direction.
[GB/T 14264-2009, the definition 3.143]
3.4
Molecular beam epitaxy molecularbeamepitaxy; MBE
Under ultra-high vacuum, the substrate is maintained at an appropriate temperature, to one or more bundles of continuous molecule is deposited onto the substrate surface to obtain a thin monocrystalline layer
Process.
[GB/T 14264-2009, the definition 3.161]
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