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GB/T 26071-2026: Monocrystalline silicon and wafers for solar cells
Status: Valid
GB/T 26071: Evolution and historical versions
| Std ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status |
| GB/T 26071-2026 | English | 299 |
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Monocrystalline silicon and wafers for solar cells
| Valid |
| GB/T 26071-2018 | English | 199 |
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Monocrystalline silicon wafers for solar cells
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| GB/T 26071-2010 | English | 399 |
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Mono-crystalline silicon as cut slices for photovoltaic solar cells
| Obsolete |
Standard similar to GB/T 26071-2026 GB/T 12963 | GB/T 29055 | GB/T 25074 | GB/T 26069 | GB/T 26072 | Basic data | Standard ID | GB/T 26071-2026 (GB/T26071-2026) | | Description (Translated English) | Monocrystalline silicon and wafers for solar cells | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H82 | | Classification of International Standard | 29.045 | | Date of Issue | 2026-01-28 | | Date of Implementation | 2026-08-01 | | Older Standard (superseded by this standard) | GB/T 26071-2018, GB/T 25076-2018 | GB/T 26071-2026: Monocrystalline silicon and wafers for solar cells---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 29.045
CCSH82
National Standards of the People's Republic of China
Replaces GB/T 25076-2018 and GB/T 26071-2018
Silicon single crystals and silicon single wafers for solar cells
Published on 2026-01-28
Implemented on August 1, 2026
State Administration for Market Regulation
The State Administration for Standardization issued a statement.
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents".
Drafting.
This document supersedes GB/T 26071-2018 "Silicon Single Crystal Wafers for Solar Cells" and GB/T 25076-2018 "Silicon..."
This document, "Single Crystal," is based on GB/T 26071-2018 and integrates the content of GB/T 25076-2018, except for structural adjustments and editorial changes.
Aside from the changes, the main technical changes are as follows.
a) The scope of application has been changed (see Chapter 1, Chapter 1 of the.2018 edition);
b) The product sizes for quasi-square silicon wafers, namely "100.75mm, 125.75mm, 156Ⅰ, 156Ⅱ, 156Ⅲ, 161.75mm", have been removed.
210.75mm” and square silicon wafer product sizes “100.75mm, 125.75mm, 156.75mm, 210.75mm” (see
(2018 version 4.2.2)
c) Added quasi-square silicon wafer product sizes "166.00mm, 182.00mm" and square silicon wafer product sizes "182.00mm,
210.00 mm” and rectangular silicon wafer product dimensions (see 4.2.2);
d) The requirement for crystal orientation in electrical properties has been removed (see 5.3 in the.2018 edition), and a requirement for dopant has been added (see 5.1);
e) An additional requirement for interstitial oxygen content has been added (see 5.3.1);
f) Added requirements for substitutional carbon content (see 5.3.2);
g) Added crystal integrity requirements (see 5.4);
h) The requirements for silicon wafer crystal integrity, oxygen content, and carbon content have been removed (see 5.1 in the.2018 version);
i) The geometric parameter requirements have been changed (see 5.5, 5.2.1 in the.2018 version);
j) The verticality requirement has been changed (see 5.6,.2018 version of 5.6);
k) The requirements for the quasi-square silicon single crystal end face and silicon wafer dimensions have been changed (see 5.7.1, 5.2.2 in the.2018 version);
l) The requirements for the square silicon single crystal end face and silicon wafer dimensions have been changed (see 5.7.2, 5.2.3 in the.2018 version);
m) Added requirements for the rectangular silicon single crystal end face and silicon wafer outline dimensions (see 5.7.3);
n) An additional test method for interstitial oxygen content has been added (see 6.6);
o) A test method for substitutional carbon content has been added (see 6.7);
p) A test method for crystal integrity has been added (see 6.8);
q) Sampling requirements have been changed (see Chapter 7, 7.4 of the.2018 edition);
r) The criteria for interpreting test results have been changed (see 7.5,.2018 version 7.5);
s) The marking requirements have been changed (see 8.1,.2018 version of 8.1).
Please note that some content in this document may involve patents. The issuing organization of this document assumes no responsibility for identifying patents.
This document was prepared by the National Technical Committee on Standardization of Semiconductor Equipment and Materials (SAC/TC203) and the National Semiconductor Equipment and Materials Standards Committee.
It was jointly proposed and is under the jurisdiction of the Materials Subcommittee of the Chemical Technology Committee (SAC/TC203/SC2).
This document was drafted by. TCL Zhonghuan New Energy Technology Co., Ltd., LONGi Green Energy Technology Co., Ltd., and Qingdao Gaocheng Technology Co., Ltd.
Joint-stock company, JA Solar Technology Co., Ltd., Shuangliang Silicon Materials (Baotou) Co., Ltd., Nonferrous Metals Technology and Economic Research Institute
Limited Liability Company, Gaojing Solar Energy Co., Ltd., Sichuan Yongxiang Co., Ltd., Ningxia Huanou New Energy Technology Co., Ltd.
The main drafters of this document are. Zhang Xuenü, Li Jianhong, Liu Zixuan, Xing Xu, Qin Xiao, Wang Xinshe, Yu Linxin, Zhang Cunjiang, He Dongjiang, and Qiao Le.
Zhao Cunfeng, Huang Shijian, Li Suqing, and Han Qinghui.
This document was first published in.2010, revised for the first time in.2018, and this is the second revision, incorporated into GB/T 25076-2018.
The content of "Silicon Single Crystal for Solar Cells" (the previous versions of GB/T 25076-2018 are. GB/T 25076-2010).
Silicon single crystals and silicon single wafers for solar cells
1 Scope
This document specifies the grades, classifications, and technologies of silicon single crystals (hereinafter referred to as "silicon single crystals") and silicon single crystal wafers (hereinafter referred to as "silicon wafers") for solar cells.
The requirements, inspection rules, marking, packaging, transportation, storage, accompanying documents, and purchase order contents describe the corresponding test methods.
This document applies to silicon single crystals prepared by the Czochralski method and silicon single-crystal wafers produced by the process.
2 Normative references
The contents of the following documents, through normative references within the text, constitute essential provisions of this document. Dated citations are not included.
For references to documents, only the version corresponding to that date applies to this document; for undated references, the latest version (including all amendments) applies.
This document.
GB/T 1550 Test Method for Conductivity Type of Intrinsic Semiconductor Materials
GB/T 1551 Determination of resistivity of single crystal silicon. Four-probe method and two-probe method
GB/T 1554 Chemical preferential etching test method for silicon crystal integrity
GB/T 1555 Method for determining crystal orientation of semiconductor single crystals
GB/T 1557 Infrared Absorption Measurement Method for Interstitial Oxygen Content in Silicon Crystals
GB/T 1558 Infrared Absorption Test Method for Substituted Carbon Content in Silicon
GB/T 2828.1-2012 Sampling Procedures for Inspection by Attributes – Part 1.Lot-by-lot Inspection Sampling Indexed by Acceptable Quality Limit (AQL)
plan
GB/T 6616 Test of resistivity of semiconductor wafers and thin film resistivity of semiconductor films - Non-contact eddy current method
GB/T 6618 Test method for thickness and total thickness variation of silicon wafers
GB/T 6619 Test method for bending of silicon wafers
GB/T 11073-2007 Measurement Method for Radial Resistivity Change of Silicon Wafers
GB/T 14264 Semiconductor Materials Terminology
GB/T 14844 Method for Designating Semiconductor Materials
GB/T 30859 Test methods for warpage and waviness of silicon wafers for solar cells
GB/T 30860 Test methods for surface roughness and dicing marks of silicon wafers for solar cells
GB/T 42907 Test of non-equilibrium carrier recombination lifetime in silicon ingots, blocks and wafers - Non-contact eddy current induction method
SJ/T 11630 Test Method for Geometric Dimensions of Silicon Wafers for Solar Cells
YS/T 28 Silicon Wafer Packaging and Marking
3 Terms and Definitions
The terms and definitions defined in GB/T 14264 and the following terms and definitions apply to this document.
3.1
Two adjacent sides are of equal length, the chamfer is a rounded arc shape, and the projected dimension of the chamfer in the side length direction is not less than 5.0mm.
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