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GB/T 20229-2022: Gallium phosphide single crystal
Status: Valid GB/T 20229: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 20229-2022 | English | 219 |
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Gallium phosphide single crystal
| Valid |
GB/T 20229-2022
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| GB/T 20229-2006 | English | 279 |
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Gallium phosphide single crystal
| Obsolete |
GB/T 20229-2006
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PDF similar to GB/T 20229-2022
Basic data | Standard ID | GB/T 20229-2022 (GB/T20229-2022) | | Description (Translated English) | Gallium phosphide single crystal | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H83 | | Word Count Estimation | 11,188 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 20229-2022: Gallium phosphide single crystal---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Gallium phospide single crystal
ICS 29.045
CCSH83
National Standards of People's Republic of China
Replacing GB/T 20229-2006
Gallium Phosphide Single Crystal
Published on 2022-03-09
2022-10-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration
foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents"
drafted.
This document replaces GB/T 20229-2006 "Gallium Phosphide Single Crystal", compared with GB/T 20229-2006, except for structural adjustment and editorial
In addition to the changes, the main technical changes are as follows.
a) Changed the scope of application (see Chapter 1, Chapter 1 of the.2006 edition);
b) the chapter "Terms and Definitions" was added (see Chapter 3);
c) Changed the representation of grades (see Chapter 4, 3.1 of the.2006 edition);
d) Change the carrier concentration and resistivity requirements of doped n-type gallium phosphide single crystal ingot (see 5.1.1, 3.2.2 of the.2006 edition);
e) Added the electrical performance requirements for p-type and semi-insulating gallium phosphide single crystal ingots (see 5.1.1);
f) Deleted the requirement for the diameter of gallium phosphide single crystal ingot (see 3.2.4 of the.2006 edition);
g) The requirements for dislocation density of gallium phosphide single crystal ingots have been increased (see 5.1.3);
h) Deleted the requirement for gallium phosphide single crystal ingots without twin lines (see 3.2.5 of the.2006 edition);
i) Changed the requirements for dislocation density of gallium phosphide single crystal grinding sheets (see 5.2.1, 3.3.2 of the.2006 edition);
j) Added the requirements for the surface orientation of gallium phosphide single crystal grinding sheets (see 5.2.2);
k) Changed the thickness and allowable deviation requirements of the 50.8mm diameter gallium phosphide single crystal grinding sheet (see 5.2.3, 3.3.4 of the.2006 edition);
l) Added the requirements for warpage, total thickness change, and total indication reading in geometric parameters of gallium phosphide single crystal grinding sheet (see 5.2.3);
m) The geometrical parameter requirements for gallium phosphide single crystal grinding sheets with a diameter of 63.5mm and 76.2mm have been added (see 5.2.3);
n) Changed the requirements for the surface quality of gallium phosphide single crystal grinding sheets (see 5.2.4, 3.3.3 of the.2006 edition);
o) Changed the test method (see Chapter 6, Chapter 4 of the.2006 edition);
p) Modified the determination of batch, inspection items, sampling and inspection results (see Chapter 7, Chapter 5 of the.2006 edition);
q) Changed the requirements for signs (see 8.1, 6.1 of the.2006 edition);
r) Changed the packaging requirements (see 8.2, 6.2 and 6.3 of the.2006 edition);
s) Changed the requirements for accompanying documents (see 8.5, 6.5 of the.2006 edition);
t) Added the content of the order form (see Chapter 9);
u) Added the normative appendix "Test method for dislocation density of gallium phosphide single crystal" (see Appendix A).
Please note that some content of this document may be patented. The issuing agency of this document assumes no responsibility for identifying patents.
This document is jointly developed by the National Standardization Technical Committee for Semiconductor Equipment and Materials (SAC/TC203) and the National Standard for Semiconductor Equipment and Materials
The material sub-technical committee (SAC/TC203/SC2) of the Chemical Technology Committee jointly proposed and managed it.
This document is drafted by. The Thirteenth Research Institute of China Electronics Technology Group Corporation, Youyan Guojinghui New Materials Co., Ltd., Nonferrous Metals Technology Co., Ltd.
Technical Economics Research Institute Co., Ltd.
The main drafters of this document. Sun Niefeng, Wang Yang, Li Xiaolan, Liu Huisheng, Li Suqing, Wang Shujie, Shao Huimin, Shi Yanlei, Zhang Lu, Xu Xing,
Fu Lijie, Zhang Xiaodan, Jiang Jian.
This document was first published in.2006 and this is the first revision.
Gallium Phosphide Single Crystal
1 Scope
This document specifies the grades, technical requirements, test methods, inspection rules, signs, packaging, transportation, storage and accompanying documents of gallium phosphide single crystals
parts and the contents of the order form.
This document applies to the production of gallium phosphide single crystal ingots and gallium phosphide single crystal grinding sheets for optoelectronic, microelectronic and acousto-optic devices.
2 Normative references
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations
documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to
this document.
GB/T 1555 Method for Determination of Crystal Orientation of Semiconductor Single Crystal
GB/T 2828.1-2012 Counting Sampling Inspection Procedures Part 1.Lot-by-Lot Inspection Sampling Retrieved by Acceptance Quality Limit (AQL)
plan
GB/T 4326 Extrinsic semiconductor single crystal Hall mobility and Hall coefficient measurement method
GB/T 6618 Silicon Wafer Thickness and Total Thickness Variation Test Method
GB/T 6620 Non-contact test method for warpage of silicon wafers
GB/T 6621 Test Method for Surface Flatness of Silicon Wafers
GB/T 6624 Visual inspection method for the surface quality of silicon polished wafers
GB/T 14264 Terms of Semiconductor Materials
GB/T 14844 Representation method of semiconductor material grades
SJ/T 11488 Test method for semi-insulating gallium arsenide resistivity, Hall coefficient and mobility
3 Terms and Definitions
Terms and definitions defined in GB/T 14264 apply to this document.
4 grades
The designation method of gallium phosphide single crystal ingots and gallium phosphide single crystal grinding sheets shall comply with the provisions of GB/T 14844.
5 Technical requirements
5.1 Characteristics of Gallium Phosphide Single Crystal Ingot
5.1.1 Electrical properties
The electrical properties of the gallium phosphide single crystal ingot shall meet the requirements in Table 1.
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