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Std ID |
Description (Standard Title) |
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SJ/T 11405-2009
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Semiconductor optoelectronic devices for fibre optic system applications. Part 2: Measuring methods
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SJ 20986-2008
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General specification for bulk acoustoptic device
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SJ 20868-2003
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Measuring methods for charge coupled imaging device
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SJ 20869-2003
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Measuring methods for LiNbO3 integrated optical guided-wave modulators
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SJ 20642.7-2000
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Semiconductor opto-electronic devices Detail specification for type GR1325J light emitting diode module
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SJ 20786-2000
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General specification for semiconductor opto-electronic assembly
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SJ 20791.1-2000
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Detail specification for type GDB-603 Microchannel plate photomultiplier tube
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SJ 50033/147-2000
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Semiconductor optoelectronic devices. Detail specification for type GF1121 Light-emitting diode indicate lamp
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SJ 20723-1998
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Detail specification for type GC6001 optoelectronic isolator assembly for pulse signal
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SJ 20724-1998
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Detail specification for type GC2004 optoelectronic isolator assembly for multi-channel high-speed data
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SJ 20644-1997
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General Specification for Detectors of PIN, APD
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SJ/T 10686-1995
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Optocouplers for safe electrical isolation-Requirements, tests
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SJ 2247-1982
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Outlines dimension for semiconductor optoelectronic devices
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SJ/T 10706-1996
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Optimum size series for contours and windows of liquid crystal display devices
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SJ/T 11460.6.3-2022
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(Display light source assemblies - Part 6-3: Test methods LED light strips - Optoelectronic parameters)
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SJ/T 11460.3.3.1-2021
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(Backlight assemblies for liquid crystal displays - Part 3-3-1: Detailed specifications for direct-lit LED backlight assemblies for television receivers)
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SJ/T 11460.3.4-2019
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(LCD backlight assembly Part 3-4: Blank detail specification for automotive LED backlight assembly)
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SJ/T 11460.3.5-2019
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(LCD backlight assembly Part 3-5: Blank detail specification for LED backlight assembly for household appliances)
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SJ/T 11460.3.6-2019
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(Backlight assemblies for liquid crystal displays Part 3-6: Blank detail specification for LED backlight assemblies for industrial instruments)
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SJ/T 11460.4-2018
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(Liquid gas forging hammer)
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SJ/T 11141-2017
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Generic specification for LED displays
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SJ/T 11281-2017
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Measure methods of light emitting diode (LED) displays
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SJ 20987/1-2016
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(Detail specification for LCM104XA04 reinforced liquid crystal display)
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SJ/T 11459.2.2.5-2016
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(Section 2-2-5 liquid crystal display device: a TV show detailed specification for module color matrix LCD)
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SJ/T 11461.2-2016
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Organic light emitting diode displays--Part 2: Essential ratings and characteristics
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SJ 2658.10-1986
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Methods of measurement for semiconductor infrared diodes Methods of measurement for modulated wideband
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SJ 2658.11-1986
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Methods of measurement for semiconductor infrared diodes Methods of measurement for pulse response characteristics
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SJ 2658.1-1986
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Methods of measurement for semiconductor infrared diodes General rules
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SJ 2658.12-1986
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Methods of measurement for semiconductor infrared diodes Methods of measurement for peak emission wavelength and spectral half width
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SJ 2658.13-1986
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Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical power temperature coefficient
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SJ 2658.2-1986
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Methods of measurement for semiconductor infrared diodes Methods of measurement for forward voltage drop
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SJ 2658.3-1986
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Methods of measurement for semiconductor infrared diodes Methods of measurement for backward voltage
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SJ 2658.4-1986
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Methods of measurement for semiconductor infrared diodes Methods of measurement for capacitance
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SJ 2658.5-1986
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Methods of measurement for semiconductor infrared diodes Methods of measurement for forward series resistance
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SJ 2658.6-1986
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Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical power
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SJ 2658.7-1986
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Methods of measurement for semiconductor infrared diodes Methods of measurement for radiant flux
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SJ 2658.8-1986
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Methods of measurement for semiconductor infrared diodes Methods of measurement for normal radiance
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SJ 2658.9-1986
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Methods of measurement for semiconductor infrared diodes Methods of measurement for the intensity space distribution and half-intensity angle of radiation
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SJ 2684-1986
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Physical Demensions For Light Emitting Device Of Semiconductor
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SJ 2558-1984
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Detail specification for semiconductor light emitting numeric displays, Type SM1~18
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SJ 2354.10-1983
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Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix
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SJ 2354.11-1983
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Method of measurement for width of blind zone of PIN and avalanche photodiode matrix
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SJ 2354.1-1983
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General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
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SJ 2354.12-1983
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Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes
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SJ 2354.13-1983
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Method of measurement for multiplication factor of PIN and avalanche photodiodes
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SJ 2354.14-1983
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Method of measurement for excess noise factor of PIN and avalanche photodiodes
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SJ 2354.2-1983
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Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes
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SJ 2354.3-1983
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Method of measurement for dark current of PIN and avalanche photodiodes
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SJ 2354.4-1983
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Method of measurement for forward voltage drop of PIN and avalanche photodiodes
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SJ 2354.5-1983
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Method of measurement for capacitance of PIN and avalanche photodiodes
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SJ 2354.6-1983
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Method of measurement for responsivity of PIN and avalanche photodiodes
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SJ 2354.7-1983
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Method of measurement for spectral response curve and spectral response range of PIN and avalanche photodiodes
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SJ 2354.8-1983
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Method of measurement for pulse rise time and fall time of PIN and avalanche photodiodes
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SJ 2354.9-1983
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Method of measurement for noise equivalent power of PIN and avalanche photodiodes
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SJ 2355.1-1983
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General procedures of measurement for light-emitting deivces
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SJ 2355.2-1983
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Method of measurement for forward voltage drop of light-emitting devices
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SJ 2355.3-1983
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Method of measurement for reverse current of light-emitting devices
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SJ 2355.4-1983
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Methods of measurement for junction capacitance of light-emitting devices
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SJ 2355.5-1983
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Method of measurement for luminous intensity and half-intensity angle of light-emitting devices
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SJ 2355.6-1983
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Method of measurement for luminous flux of light-emitting devices
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SJ 2355.7-1983
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Method of measurement for peak emission wavelength and spectral radiation bandwidth of light-emitting devices
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SJ 20437-1994
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Specification for lead tin telluride slice for use in infrared detector
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SJ 20438-1994
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Methods for measurement of lead tin telluride slice for use in infrared detector
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SJ/T 11466-2014
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Infrared remote control receiving amplifier
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SJ 20955-2006
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Indicators, fault locating, general specification for
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SJ 20830-2002
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General specification for PtSi infrared focal plane arrays detector-dewar assembly
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SJ 20831-2002
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Method for measurement and test of parameters of 4N infrared focal plane detector dewar assembly
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SJ 20784-2000
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General specification for micro Dewar
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SJ 51206/3-1998
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Detail specification of infrared detector module for Type 4/20H83SY2
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SJ 51206/2-1996
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Detail speciification for type 60H30DY2 60 elements with liquid-nitrogencooler photoconductive infrared detector module in mercury cadmium telluride
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SJ 51206/1-1995
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Detail speciification for throttle-cooled and photoconductive infrared detector module in lead sulfide Fir type H20DJ1
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SJ 20046-1992
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General specification for portable non-metallic mine detectors
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SJ 21586-2021
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(Additive Manufacturing Process Requirements for Selected Area Laser Melting of Aluminum Alloys for Military Electronic Equipment)
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SJ 20138A-2018
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(Specification of Nd-doped Yttrium Aluminum Garnet Laser Bar)
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SJ/T 11403-2009
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Laser diode modules used for telecommunication. Reliability assessment
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SJ 20821-2002
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Measurements method for coefficient of loss per pass of laser rods
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SJ 20798-2001
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General specification for the key management center in the military digital secure automatic telephone network
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SJ 20762-1999
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Measurement methods for parameters of gas lasers
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SJ 20027.1-1997
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Detail specification for type JYM200-1 solid-state pulse laser
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SJ 20531-1995
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General specification for gas lasers
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SJ 50033/101-1995
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Detail specification for semiconductor laser diode modules for type GJ1325
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SJ 20027-1992
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General specification for solid-state lasers
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SJ 20138-1992
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Specification for neodymium-doped yttrium aluminum garnet laser rods
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SJ 2750-1987
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Outline dimensions for semiconductor laser diodes
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SJ 2664-1986
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Test methods of accelerated life test for helium-neon laser devices
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SJ 1871-1981
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Measurement conditions for gas laser devices
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SJ 1872-1981
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Methods of measurement for firing voltage of gas laser devices
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SJ 1873-1981
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Methods of measurement for optimum working current of gas laser devices
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SJ 1874-1981
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Methods of measurement for tube voltage drop of gas laser devices
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SJ 1875-1981
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Methods of measurement for output power of gas laser devices
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SJ 1876-1981
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Methods of measurement for stability of output power for gas laser devices
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SJ 1877-1981
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Methods of measurement for excursion of beam direction of gas laser devices
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SJ 1878-1981
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Methods of discrimination for transverse mode of gas laser devices
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SJ 1879-1981
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Methods of measurement for angle of beam divergence of gas laser devices
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SJ 1880-1981
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Methods of measurement for frequency drift of gas laser devices
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SJ 1881-1981
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Methods of measurement for polarization of gas laser devices
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SJ/T 11209-1999
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Photovoltaic devices. Part 6: Requirements for reference solar modules
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SJ/T 11766-2020
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(Testing method for power consumption and noise parameters of photoelectric coupling device)
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SJ/T 2215-2015
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Measuring methods for semiconductor photocouplers
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SJ/T 11395-2009
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Semiconductor lighting terminology
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