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Std ID |
Description (Standard Title) |
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SJ/T 11461.3-2016
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(The organic light emitting diode displays - Part 3: Sectional specification display)
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SJ/T 11461.4-2016
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(Part 4 of the organic light emitting diode display: a display module specification)
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SJ/T 11461.5.2-2016
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(Part 5-2 organic light emitting diode display device: Mechanical test methods)
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SJ/T 11461.5.3-2016
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(Part 5-3 organic light emitting diode display device: Test methods and life afterimage)
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SJ/T 11461.6.2-2016
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(Organic light emitting diode display devices - Part 6-2: Test methods - Visual quality)
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SJ/T 11591.1.1-2016
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(Stereoscopic display devices - Part 1-1: Generic specification)
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SJ/T 11591.1.2-2016
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(Stereoscopic display devices - Part 1-2: Terms and definitions)
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SJ/T 11591.4.1.1-2016
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(Section 4-1-1 stereoscopic display: glasses stereoscopic display device measurement methods - optical and optoelectronic)
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SJ/T 11591.4.2.1-2016
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(Section 4-2-1 stereoscopic display device: stereoscopic display measurement methods - optical and optoelectronic)
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SJ/T 11378.6.1-2015
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(Plasma display panels - Part 6-1: Digital TV color plasma display detailed specification)
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SJ/T 11378.7-2015
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(Plasma display panels - Part 7: Digital TV with the reliability of the test method for plasma display)
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SJ/T 11460.6.1-2015
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Backlight unit for liquid crystal display. Part 6-1: Measuring method of optical and optoelectrical parameters
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SJ/T 11460.6.2-2015
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Backlight unit for liquid crystal display. Part 6-2: Measuring methods of dynamic optical and optoelectrical parameters
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SJ/T 11459.7.1-2014
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(The liquid crystal display devices - Part 7-1: Passive liquid crystal display window shape and size preferred series)
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SJ/T 11460.2-2014
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Backlight units for liquid crystal displays. Part 2: Cold Cathode Fluorescent Lamp (CCFL) backlight units. Blank detailspecification
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SJ/T 11460.3.1-2014
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Backlight units for liquid crystal displays. Part 3-1: LED backlight unit for portable display. Blank detail specification
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SJ/T 11459.2.2.1-2013
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Liquid crystal display devices. Part 2-2-1: Matrix colour LCD module for automotive applications. Detail specification
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SJ/T 11459.2.2.2-2013
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Liquid crystal display devices. Part2-2-2: Matrix colour LCD modules for monitor. Detail specification
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SJ/T 11459.2.2.3-2013
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Liquid crystal display devices. Part 2-2-3: Matrix colour LCD modules for Notebook PC. Detail specification
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SJ/T 11459.2.2.4-2013
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Liquid crystal display devices. Part 2-2-4: Matrix colour LCD modules for mobile phone. Detail specification
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SJ/T 11460.1-2013
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Backlight units for liquid crystal displays. Part 1: Generic specification
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SJ/T 11460.3.2-2013
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Backlight units for liquid crystal displays. Part 3-2: LED backlight unit for monitor. Blank detail specification
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SJ/T 11461.1.1-2013
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Organic light emitting diode(OLED)displays. Part 1-1: Generic specifications
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SJ/T 11461.5.1-2013
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Organic light emitting diode(OLED)displays. Part 5-1: Environmental testing methods
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SJ 20987-2008
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General specification for military rugged liquid crystal display
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SJ/T 11378-2008
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Plasma display panels. Part 3-1: Mechanical interface
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SJ/T 11379-2008
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Plasma display panels. Part 4: Climatic and mechanical testing methods
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SJ 20847-2002
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Specification for broad temperature range liquid crystal mixtures
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SJ 52146/2-2002
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Detail specification for low power dissipation numerical display for type GS1113K
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SJ/T 11248-2001
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Liquid crystal and solid-state display devices. Part 3-1: Liquid crystal display (LCD) cells-Blank detail specification
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SJ 20746-1999
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Test method for the properties of liquid crystal materials
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SJ/T 11203-1999
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Terms for liquid crystal materials
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SJ/T 11141-1997
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(Chinese Industry Standard)
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SJ/T 11086-1996
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Specification of gap sparker for type FD08, FD12 and FD15
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SJ 20466-1994
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3dB slot hybrid of Aluminum waveguide Type BQF-100-1
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SJ 20078-1992
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Generic specification of liquid crystal display devices
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SJ/T 10135-2010
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General specification for TEC1 thermoelectric cooling module
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SJ/T 10136-2010
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General specification for TES1 thermolectric cooling module
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SJ 20517-1995
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Specification for Thermoelectric cooling module TEC1-03108
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SJ 20440-1994
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Specification for type TEC1-03224 thermoelectric cooling module
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SJ 20441-1994
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Specification for type TEC1-04904 thermoelectric cooling module
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SJ 20447-1994
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Specification for type TEC3-10103 thermoelectric cooling module
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SJ 20141-1992
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Specification for thermoelectric cooling module TES1-01212TT
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SJ/T 10135-1991
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Detail specification for electronic components Electronic tube of type FC-620F
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SJ/T 10136-1991
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Detail specification for electronic components Electronic tube of type FU-605
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SJ/T 10137-1991
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Thermoelectric refrigeration modules, TEC1-127 series
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SJ 2855-1988
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Terms for thermoelectric refrigeration
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SJ 2856-1988
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Designation system for thermoelectric refrigeration modules
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SJ 2857.1-1988
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Methods for measurement of thermoelectric refrigeration materials properties--Methods for measurement of thermal conductivity
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SJ 2857.2-1988
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Methods for measurement of thermoelectric refrigeration materials properties--Methods for measurements of conductivity
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SJ 2857.3-1988
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Methods for measurement of thermoelectric refrigeration materials properties--Methods for measurement of thermoelectric electromotance
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SJ 2858-1988
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Method for measurement of thermoelectric refrigeration modules properties--Test method for temperature difference and maximum cold side temperature
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SJ/T 11578-2016
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Wall-plug efficiency requirements for LED modules
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SJ/T 11455-2013
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Methods measurement of oscilloscope tubes and indicator tubes
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SJ/T 11393-2009
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Semiconductor optoelectronic devices. Blank detail specification for power light-emitting diodes
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SJ/T 11394-2009
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Measure methods of semiconductor light emitting diodes
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SJ/T 11398-2009
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Technical specification for power light-emitting diode chips
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SJ/T 11399-2009
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Measurement methods for chips of light emitting diodes
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SJ/T 11400-2009
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Semiconductor optoelectronic devices. Blank detail specification for lower-power light-emitting diodes
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SJ/T 11401-2009
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Series program for semiconductor light emitting diodes
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SJ 50033.48-1994
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Semiconductor discrete device. Detail specification for type 2DV8CP silicon microwave detector diode
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SJ 50033.49-1994
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Semiconductor discrete device. Detail specification for step recovery diodes for 2CJ4220 series
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SJ 2005-1982
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Detail specification for N channel junction pair field-effect transistors, Type CS34
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SJ/T 9014.8.2-2018
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Semiconductor devices. Discrete devices - Part 8-2: Blank detail specification for super junction metal-oxide-semiconductor field-effect transistors
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SJ 20789-2000
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Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor
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SJ 50033/119-1997
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Semiconductor discrete devices. Detail specification for type CS204 GaAs microwave power field effect transistor
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SJ 50033/120-1997
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Semiconductor discrete devices. Detail specification for type CS205 GaAs microwave power field effect transistor
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SJ 50033/121-1997
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Semiconductor discrete devices. Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect transistors
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SJ 50033/122-1997
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Semiconductor discrete devices. Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect transistors
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SJ/T 10956-1996
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Detailed specifications for electronic components - 4CS122 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
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SJ/T 10957-1996
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Detailed specifications for electronic components - 4CS103 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
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SJ/T 11055-1996
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Detailed specifications for electronic components - 4CS119 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
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SJ/T 11056-1996
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Detailed specifications for electronic components - 4CS1191 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
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SJ/T 11057-1996
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Detailed specifications for electronic components - 4CS142 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
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SJ/T 11058-1996
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Detailed specifications for electronic components - 4CS1421 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
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SJ/T 11059-1996
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Detailed specifications for electronic components - CS4220A single-gate N-channel junction type field-effect transistors (Applicable for certification)
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SJ 50033.51-1994
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Semiconductor discrete devices. Detail specification for type CS0558 GaAs microwave dual gate FET
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SJ 50033.52-1994
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Semiconductor discrete device. Detail specification for type CS0529 GaAs microwave Power field effect transistor
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SJ 50033.53-1994
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Semiconductor discrete device. Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor
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SJ 50033.54-1994
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Semiconductor discrete device. Detail specification for type CS0532 GaAs microwave Power field effect transistor
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SJ 50033/38-1994
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Semiconductor discrete device. Detail specification for type CS4856~CS4861 silicon N-channel deplition mode field-effect transistor
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SJ 50033/42-1994
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Semiconductor discrete device. Detail specification for type CS0467 GaAs microwave FET
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SJ 20011-1992
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Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS1 GP, GT and GCT classes
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SJ 20012-1992
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Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS4 GP, GT and GCT classes
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SJ 20013-1992
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Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of types CS10 GP, GT and GCT classes
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SJ 20061-1992
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Semiconductor discrete device. Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146
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SJ 20184-1992
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Semiconductor discrete device Detail specification for field-effect transistor of types CS3821, 3822, 3823
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SJ/T 10067-1991
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Detail specification for electronic component programmble unijunction transistors for type BT 40
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SJ 2748-1987
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Blank detail specification for single-gate low noise microwave FETs
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SJ 2092-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS35
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SJ 2093-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS36
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SJ 2094-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS37
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SJ 2095-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS38
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SJ 2096-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS39
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SJ 2097-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS40
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SJ 2098-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS41
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SJ 2099-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS42
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SJ 2100-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS43
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SJ 2101-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS44
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SJ 2102-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS45
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