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Std ID |
Description (Standard Title) |
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SJ 2215.1-1982
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General procedures of measurement for semiconductor photocouplers
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SJ 2215.12-1982
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Method of measurement for input-to-output capacitance of semiconductor photocouplers
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SJ 2215.13-1982
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Method of measurement for input-to-output isolation resistance of semiconductor photocouplers
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SJ 2215.14-1982
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Method of measurement for input-to-output isolation voltage of semiconductor photocouplers
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SJ 2215.2-1982
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Method of measurement for forward voltage of semiconductor photocouplers (diodes)
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SJ 2215.3-1982
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Method of measurement for forward current of semiconductor photocouplers (diodes)
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SJ 2215.4-1982
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Method of measurement for reverse current of semiconductor photocouplers (diodes)
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SJ 2215.5-1982
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Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes)
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SJ 2215.6-1982
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Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
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SJ 2215.7-1982
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Method of measurement for collector-emitter reverse breakdown voltage of semiconductor photocouplers (diodes)
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SJ 2215.8-1982
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Method of measurement for output saturation voltage of semiconductor photocouplers (diodes)
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SJ 2215.9-1982
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Method of measurement for reverse cut-off current of semiconductor photocouplers transistors
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SJ 2216-1982
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Silicon photodiodes
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SJ 2218-1982
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Semiconductor photocouplers in the diode mode
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SJ 2219-1982
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Semiconductor photocouplers in the transistor mode
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SJ 2220-1982
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Semiconductor photocouplers in the Darlington transistor mode
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SJ/T 2217-1982
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Silicon phototransistors
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SJ/T 11141-2025
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Generic specification for LED displays
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SJ/T 11281-2025
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(Light-emitting diode (LED) display test method)
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SJ/T 11590-2025
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Subjective assessment method for image quality of LED display
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SJ/T 11890-2023
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Design requirement of energy conservation for LED displays
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SJ/T 11891-2023
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Energy efficiency measurement method for LED displays
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SJ/T 11459.2.3.1-2023
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(Liquid crystal display devices - Part 2-3-1: Detailed specifications for color matrix stacked screen liquid crystal display modules for televisions)
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SJ/T 11459.2.3.2-2023
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(Liquid crystal display devices - Part 2-3-2: Detailed specifications for color matrix stacked screen liquid crystal display modules for displays)
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SJ/T 11459.2.3-2023
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(Liquid crystal display devices - Part 2-3: Color matrix stacked screen liquid crystal display module Blank detailed specification)
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SJ/T 11460.6.4-2023
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Display lighting unit - Part 6-4: Measuring methods of optoelectrical parameters of LED light board
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SJ/T 11460.6.5-2023
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(Display light source assembly - Part 6-5: Test method Optoelectronic parameters of LED front light assembly)
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SJ/T 11461.5.2-2023
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(Organic light-emitting diode display devices - Part 5-2: Mechanical test methods)
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SJ/T 11461.5.3-2023
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(Organic light-emitting diode display devices - Part 5-3: Test methods for afterimage and lifetime)
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SJ/T 11847.3.3-2023
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(Flexible display devices - Part 3-3: Detailed specifications for inner foldable flexible display modules)
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SJ/T 11758-2020
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(LED chip performance specification for LCD backlight assembly)
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SJ/T 2217-2014
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Technical specification for phototransistor of silicon
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SJ 20972-2007
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General specification for imaging charge coupled assemblies
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SJ/T 11165-1998
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Blank detail specification of PIN-FET modules with/without pigtail for fibre optic systems or subsystems
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SJ 50033/114-1996
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Semiconductor discrete device. Detail specification for type GD3283Y position sensitive detector
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SJ 50923/2-1995
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Detail specification for types G2-01B-M1, G2-01B-Z1 metal case for semiconductor photosensitive devices
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SJ 50033.40-1994
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Detail specification for type GT11 semiconductor sililcon NPN photo-transistor
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SJ 2214.10-1982
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Method of measurement for light current of semiconductor photodiodes and phototransistors
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SJ 2214.1-1982
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General procedures of measurement for semiconductor photodiodes and phototransistors
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SJ 2214.2-1982
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Method of measurement for forward voltage of semiconductor photodiodes
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SJ 2214.3-1982
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Method of measurement for dark current of semiconductor photodiodes
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SJ 2214.4-1982
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Method of measurement for reverse break-down voltage of semiconductor photodiodes
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SJ 2214.5-1982
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Method of measurement for junction capacitance of semiconductor photodiodes
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SJ 2214.6-1982
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Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors
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SJ 2214.7-1982
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Method of measurement for saturation voltage of semiconductor phototransistors
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SJ 2214.8-1982
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Method of measurement for dark current voltage of semiconductor phototransistors
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SJ 2214.9-1982
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Method of measurement for pulse rise and fall time of semiconductor photodiodes and phototransistors
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SJ 2215.10-1982
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Method of measurement for direct current transfer ratio of semiconductor photocouplers
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SJ 2215.11-1982
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Method of measurement for pulse rise fall delay and storage time of semiconductor photocouplers
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SJ/T 11733-2019
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(Detailed Specification of COB LED Blank)
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SJ/T 11734-2019
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(Detailed Specification of Chip Scale Package (CSP) LED Blank)
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SJ/T 11460.3.3-2016
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(LCD with backlight assembly - Part 3-3: Blank television receiver with LED backlight assembly Detail specification)
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SJ/T 11577-2016
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(SJ/T 11394-2009 semiconductor light-emitting diode test method Application Guide)
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SJ/T 11579-2016
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(LED module interface rules)
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SJ/T 11580-2016
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(LED modules for general lighting (LED component) interface rules)
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SJ/T 11581-2016
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(LED module accelerated life test methods)
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SJ/T 2658.14-2016
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Measuring method for semiconductor infrared-emitting diode - Part 14: Junction temperature
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SJ/T 2658.15-2016
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Measuring method for semiconductor infrared-emitting diode - Part 15: Thermal resistance
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SJ/T 2658.16-2016
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Measuring method for semiconductor infrared-emitting diode - Part 16: Photo-electric conversion efficiency
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SJ/T 2749-2016
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(The semiconductor laser diode test)
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SJ/T 11485-2015
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LED type naming rules
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SJ/T 11486-2015
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Technical specification for low power light. emitting diode chips
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SJ/T 2658.10-2015
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Measuring method for semiconductor infrared-emitting diode. Part 10: Modulation bandwidth
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SJ/T 2658.11-2015
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Measuring method for semiconductor infrared-emitting diode. Part 11: Response time
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SJ/T 2658.1-2015
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Measuring method for semiconductor infrared-emitting diode. Part 1: General
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SJ/T 2658.12-2015
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Measuring method for semiconductor infrared-emitting diode. Part 12: Peak-emission wavelength and spectral radiant bandwidth
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SJ/T 2658.13-2015
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Measuring method for semiconductor infrared-emitting diode. Part 13: Temperature coefficient for radiant power
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SJ/T 2658.2-2015
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Measuring method for semiconductor infrared-emitting diode. Part 2: Forward voltage
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SJ/T 2658.3-2015
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Measuring method for semiconductor infrared-emitting diode - Part 3: Reverse voltage and reverse current
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SJ/T 2658.4-2015
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Measuring method for semiconductor infrared-emitting diode. Part 4: Total capacitance
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SJ/T 2658.5-2015
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Measuring method for semiconductor infiared-emitting diode. Part 5: Series connection resistance
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SJ/T 2658.6-2015
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Measuring method for semiconductor infrared-emitting diode. Part 6: Radiant power
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SJ/T 2658.7-2015
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Measuring method for semiconductor infrared-emitting diode. Part 7: Radiant flux
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SJ/T 2658.8-2015
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Measuring method for semiconductor infrared-emitting diode. Part 8: Radiant intensity
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SJ/T 2658.9-2015
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Measuring method for semiconductor infiared-emitting diode. Part 9: Spatial distribution of radiant intensity and half-intensity angle
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SJ/T 11458-2013
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LED ofr liquid crystal display backlight unit performance specification
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SJ 20786.1-2002
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Semiconductor photoelectric assembly Detail specification for miniature duplex photoelectric localizer for type CBGS 2301
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SJ 53930/1-2002
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Semiconductor optoelectronic devices detail specification for type GR8813 infrared emitting diode
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SJ 20644.1-2001
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Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
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SJ 20644.2-2001
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Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
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SJ 20785-2000
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Measuring methods for super luminescent diode module
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SJ 50033/142-1999
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Semiconductor optoelectronic devices. Detail specification for type GF4112 green emitting diode
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SJ 50033/143-1999
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Semiconductor optoelectronic devices. Detail specification for type GF1120 red emitting diode
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SJ 50033/138-1998
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Semiconductor optoelectronic devices. Detail specification for yellow light - Emitting diode for type GF318
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SJ 50033/139-1998
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Semiconductor optoelectronic devices. Detail specification for green light - Emitting diode for type GF4111
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SJ/T 11152-1998
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Blank detail specification for a.c. powder electro luminescent display devices
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SJ 20642-1997
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Semiconductor opto-electronic module. General specification for
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SJ 50033/111-1996
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Semiconductor optoelectronic devices. Detail specification for type GT16 Si.NPN phototransistor
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SJ 50033/112-1996
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Semiconductor discrete device. Detail specification for type GD3251Y photodiodes
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SJ 50033/113-1996
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Semiconductor discrete device. Detail specification for type GD3252Y photodiodes
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SJ 52146/1-1996
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Detail specification for type GS1113 red LED numeric display
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SJ/T 10729-1996
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General inspection for a.c. power electro luminescent glass display devices
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SJ/T 10947-1996
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Detailed specifications for electronic components - FG341052 and FG343053 semiconductor green light emitting diodes
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SJ/T 10948-1996
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Detailed specifications for electronic components - FG313052, FG314053, FG313054 and FG314055 semiconductor red light emitting diodes
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SJ 50033/102-1995
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Detail specification for InGaAs/InP photodiode for type GD 218
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SJ 50033/58-1995
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Semiconductor optoelectronic device. Detail specification for green light emitting diode for type GF413
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SJ 50033/99-1995
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Semiconductor discrete device. Detail specification for o/G double colour light emitting diode for type GF511
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SJ/Z 9171-1995
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Specifications for determination of φ3mm green LEDs used for VCR
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SJ/Z 9184-1995
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Specifications for determination of bipolar aluminum electrolytic capacitors used for VCR
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SJ/T 10248-1991
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Detail specification for electronic components. Photo tube of type GD-24 (Applicable for certification)
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