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SJ/T 11226-2000 PDF English

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SJ/T 11226-2000: Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor
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SJ/T 11226-2000English389 Add to Cart 3 days [Need to translate] Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor  

Standard similar to SJ/T 11226-2000

SJ/T 11141 | SJ/T 11281 | GB/T 18910.2 | SJ/T 11765 | SJ/T 1477 | SJ/T 1472 |

Basic data

Standard ID SJ/T 11226-2000 (SJ/T11226-2000)
Description (Translated English) Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor
Sector / Industry Electronics Industry Standard (Recommended)
Classification of Chinese Standard L42
Classification of International Standard 31.080.30
Word Count Estimation 11,157
Date of Issue 2000-08-16
Date of Implementation 2000-10-01
Summary This standard applies to 3DA505 type L-band pulse power silicon transistor, which is in accordance with GB/T 7576-1998 "Semiconductor devices Discrete devices Part 7 bipolar transistors fourth frequency amplification Case rated bipolar transistors for Blank detail specification "standard setting, in line with GB/T 4589. 1-1989" Semiconductor devices Discrete devices and integrated circuits norms "and GB/T 12560-1999" Semiconductor devices Discrete devices specification "Class �� requirements. This specification referenced standards GB/T 4587-1994 "Discrete semiconductor devices and integrated circuits Part 7 bipolar transistors", GB/T 4589. 1-1989 "Semiconductor devices Discrete devices and integrated circuits norms", GB/T 4937 -1995 "Semiconductor devices Mechanical and climatic test methods" and GJB 128A-97 "Test Method for discrete semiconductor devices. "
SJ/T 11226-2000 English cover page

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