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GB/T 39145-2020: Test method for the content of surface metal elements on silicon wafers - Inductively coupled plasma mass spectrometry
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| GB/T 39145-2020 | English | 189 |
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Test method for the content of surface metal elements on silicon wafers - Inductively coupled plasma mass spectrometry
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GB/T 39145-2020
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Basic data | Standard ID | GB/T 39145-2020 (GB/T39145-2020) | | Description (Translated English) | Test method for the content of surface metal elements on silicon wafers - Inductively coupled plasma mass spectrometry | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H17 | | Classification of International Standard | 77.040 | | Word Count Estimation | 10,173 | | Date of Issue | 2020-10-11 | | Date of Implementation | 2021-09-01 | | Regulation (derived from) | National Standard Announcement No. 21 of 2020 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 39145-2020: Test method for the content of surface metal elements on silicon wafers - Inductively coupled plasma mass spectrometry
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Test method for the content of surface metal elements on silicon wafers - Inductively coupled plasma mass spectrometry
ICS 77.040
H17
National Standards of People's Republic of China
Determination of Metal Element Content on the Surface of Silicon Wafer
Inductively coupled plasma mass spectrometry
2020-10-11 released
2021-09-01 implementation
State Administration for Market Regulation
Issued by the National Standardization Management Committee
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard is composed of the National Semiconductor Equipment and Material Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Material Standard
The material sub-committee of the Chemical Technology Committee (SAC/TC203/SC2) jointly proposed and managed.
Drafting organizations of this standard. Nanjing Guosheng Electronics Co., Ltd., Youyan Semiconductor Materials Co., Ltd., Zhejiang Jinruihong Technology Co., Ltd.
Company, Shanghai Hejing Silicon Materials Co., Ltd., Non-ferrous Metal Technology and Economic Research Institute, Wuxi Huaying Microelectronics Technology Co., Ltd., Longteng Semiconductor
Limited company, Xiamen Kexin Electronics Co., Ltd.
The main drafters of this standard. Luo Hong, Pan Wenbin, Zhao Erjing, Sun Yan, Zhang Haiying, Xu Xinhua, Wen Ziying, Hu Jinzhi, Li Suqing, Ma Linbao,
Li Jun needs.
Determination of Metal Element Content on the Surface of Silicon Wafer
Inductively coupled plasma mass spectrometry
1 Scope
This standard specifies the method for determining the content of metal elements on the surface of silicon wafers by inductively coupled plasma mass spectrometry.
This standard is applicable to the trace metal sodium, magnesium, aluminum, potassium, calcium, chromium, manganese, iron, cobalt, nickel, copper and zinc on the surface of polished silicon single crystal wafers and silicon epitaxial wafers.
The determination of the element content is in the range of 108cm-2~1013cm-2.This standard also applies to non-patterned silicon annealing wafers, silicon diffusion wafers, etc.
Determination of trace metal element content on silicon wafer surface.
Note. The metal element content on the surface of the silicon wafer is calculated in the number of atoms per square centimeter.
2 Normative references
The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this article
Pieces. For undated references, the latest version (including all amendments) applies to this document.
GB/T 6624 Visual inspection method for surface quality of polished silicon wafer
GB/T 14264 Terminology of Semiconductor Materials
GB/T 17433 Basic terms for chemical analysis of metallurgical products
GB/T 19921 Test method for surface particles of polished silicon wafers
GB/T 25915.1-2010 Clean room and related controlled environment Part 1.Air cleanliness grade
GB/T 37837 Quadrupole Inductively Coupled Plasma Mass Spectrometry Method General
JJF1159 Quadrupole Inductively Coupled Plasma Mass Spectrometer Calibration Specification
SEMIF63 Ultrapure Water Guide for Semiconductor Processing
3 Terms and definitions
The following terms and definitions defined in GB/T 14264, GB/T 17433, GB/T 37837 and JJF1159 apply to this document.
3.1
Scan solution
A solution containing trace metal elements on the surface of a silicon wafer collected by scanning.
3.2
Direct acid drop decomposition
Decompose the oxide layer on the surface of the silicon wafer with an extraction solution containing hydrofluoric acid to form a hydrophobic surface, so that trace metals on the surface of the silicon wafer are collected
A scanning solution is formed in the extraction solution.
3.3
Gas phase decomposition
Use hydrofluoric acid vapor to decompose the oxide layer on the surface of the silicon wafer to form a hydrophobic surface, and then use an extraction solution containing hydrofluoric acid to extract the surface of the silicon wafer.
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