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GB/T 32816-2016: Silicon-based MEMS fabrication technology -- Specification for criterion of the combination of the deep etching and bonding process
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| GB/T 32816-2016 | English | 339 |
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Silicon-based MEMS fabrication technology -- Specification for criterion of the combination of the deep etching and bonding process
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GB/T 32816-2016
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Basic data | Standard ID | GB/T 32816-2016 (GB/T32816-2016) | | Description (Translated English) | Silicon-based MEMS fabrication technology -- Specification for criterion of the combination of the deep etching and bonding process | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L55 | | Classification of International Standard | 31.200 | | Word Count Estimation | 17,154 | | Date of Issue | 2016-08-29 | | Date of Implementation | 2017-03-01 | | Regulation (derived from) | National Standard Announcement 2016 No.14 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | GB/T 32816-2016: Silicon-based MEMS fabrication technology -- Specification for criterion of the combination of the deep etching and bonding process
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Silicon-based MEMS fabrication technology - Specification for criterion of the combination of the deep etching and bonding process
ICS 31.200
L55
National Standards of People's Republic of China
Silicon-based MEMS manufacturing technology
The technology integration specification with deep etching and bonding as the core
2016-08-29 released
2017-03-01 implementation
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
China National Standardization Management Committee released
Directory
Preface I
1 Scope 1
2 normative reference document 1
3 Terms and definitions 1
4 Process 1
4.1 Overview 1
4.2 wafer selection 1
4.3 Bonded area preparation 1
4.4 Preparation of glass sheet metal electrode 5
4.5 silicon - glass anode bonding 8
4.6 deep etching structure release 9
Score 11
5 process safety requirements 11
5.1 Personnel requirements 11
5.2 Environmental requirements 11
5.3 Equipment requirements 12
6 Raw material requirements 12
Safety and Environmental Requirements
7.1 Security 13
7.2 Chemical Reagent 13
7.3 emissions 13
8 test 13
8.1 General principles 13
8.2 Drying of silicon wafers The process of releasing critical processes
8.3 Final inspection 14
Foreword
This standard is drafted in accordance with the rules given in GB/T 1.1-2009.
This standard by the National Microelectromechanical Technology Standardization Technical Committee (SAC/TC336) proposed and centralized.
The main drafting of this standard. Peking University, in the machine productivity promotion center, Dalian University of Technology, Beijing Blue Bird core micro-system technology
Limited company.
The main drafters of this standard. Zhang Dacheng, Yang Fang, Li Haibin, Wang Wei, He Jun, Huang Xian, Liu Chong, Liu Wei, Zou Hulin, Tian Daewoo, Jiang Boyan.
Silicon-based MEMS manufacturing technology
The technology integration specification with deep etching and bonding as the core
1 Scope
This standard specifies the process requirements for the processing of MEMS devices using process integration with deep etch and bonding as the core.
And quality inspection requirements.
This standard is applicable to machining and quality inspection based on process integration with deep etch and bonding as the core.
2 normative reference documents
The following documents are indispensable for the application of this document. For dated references, only the dated edition applies to this article
Pieces. For undated references, the latest edition (including all modifications) applies to this document.
GB/T 19022 measurement management system measurement process and measuring equipment requirements
GB/T 26111 terminology for microelectromechanical systems (MEMS)
Code for design of clean building of GB 50073
3 terms and definitions
GB/T 26111 Definitions of terms and definitions apply to this document.
4 process flow
4.1 Overview
The process integration with deep etch and bonding as the core includes wafer bonding area preparation, glass sheet metal electrode preparation, silicon-glass anode bonding,
Deep etching structure release, scribe and other parts, of which the key process with (G) said.
4.2 Wafer selection
4.2.1 Selection of silicon material, such as n-type or p-type, lightly doped or heavily doped, resistivity, etc., should be combined with the performance requirements of the device
And follow-up process needs to determine.
4.2.2 The choice of silicon crystal face should be based on the subsequent process selection. Potassium hydroxide (KOH) or tetrakis are used in the subsequent process steps
Methyl ammonium hydroxide (TMAH) corrosion, should use (100) crystal face of the silicon.
4.3 Bonded area preparation
4.3.1 Overview
According to the design requirements of the wafer bonding area can be used to prepare a variety of methods, respectively, dry etching and wet etching.
4.3.2 Dry etching preparation
The use of reactive ion etching, the formation of bonding anchor, including photolithography, dry etching, ion implantation, annealing and other processes, as shown in Figure 1
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