|
US$479.00 · In stock
Delivery: <= 4 days. True-PDF full-copy in English will be manually translated and delivered via email.
GB/T 32815-2016: Silicon-based MEMS fabrication technology -- Specification for criterion of the bulk silicon piezo resistance process
Status: Valid
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 32815-2016 | English | 479 |
Add to Cart
|
4 days [Need to translate]
|
Silicon-based MEMS fabrication technology -- Specification for criterion of the bulk silicon piezo resistance process
| Valid |
GB/T 32815-2016
|
PDF similar to GB/T 32815-2016
Basic data | Standard ID | GB/T 32815-2016 (GB/T32815-2016) | | Description (Translated English) | Silicon-based MEMS fabrication technology -- Specification for criterion of the bulk silicon piezo resistance process | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L55 | | Classification of International Standard | 31.200 | | Word Count Estimation | 24,218 | | Date of Issue | 2016-08-29 | | Date of Implementation | 2017-03-01 | | Regulation (derived from) | National Standard Announcement 2016 No.14 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | GB/T 32815-2016: Silicon-based MEMS fabrication technology -- Specification for criterion of the bulk silicon piezo resistance process
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Silicon-based MEMS fabrication technology - Specification for criterion of the bulk silicon piezoresistance process
ICS 31.200
L55
National Standards of People's Republic of China
Silicon-based MEMS manufacturing technology
Standard Specification for Die Casting of Silicon
2016-08-29 released
2017-03-01 implementation
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
China National Standardization Management Committee released
Directory
Preface III
1 Scope 1
2 normative reference document 1
3 Terms and definitions 1
4 Process 1
4.1 Overview 1
4.2 wafer selection 1
4.3 Preparation of silicon die presses
4.4 Preparation of silicon wafer isolation area 5
4.5 silicon wafer back cavity corrosion 6
4.6 Preparation of silicon wafers (G) 10
4.7 glass plate metal electrode preparation 12
4.8 silicon - glass bonding 14
4.9 Bonded sheet silicon surface etching 15
5 process safety requirements 17
5.1 Personnel requirements 17
5.2 Environmental requirements 17
5.3 Equipment requirements 17
Raw material requirements
Safety Requirements
7.1 Safety of electricity 19
7.2 Chemical reagents 19
7.3 Emissions 19
8 Test 19
8.1 General 19
8.2 Inspection methods and requirements 19
Foreword
This standard is drafted in accordance with the rules given in GB/T 1.1-2009.
This standard by the National Microelectromechanical Technology Standardization Technical Committee (SAC/TC336) proposed and centralized.
The main drafting unit of this standard. Peking University, in the machine productivity promotion center, Dalian University of Technology, Southeast University, Beijing Bluebird core micro
System Technology Limited.
The main drafters of this standard. Zhang Dacheng, Wang Wei, Li Haibin, Yang Fang, Huang Xian, He Jun, Liu Chong, Liu Wei, Zhou Zaifa, Liu Junshan,
Jiang Boyan.
Silicon-based MEMS manufacturing technology
Standard Specification for Die Casting of Silicon
1 Scope
This standard specifies the process requirements and quality inspection requirements for the processing of MEMS devices using bulk silicon piezoresistive processes.
This standard applies to silicon-based MEMS manufacturing technology based on back cavity corrosion and silicon - glass bonding of the bulk silicon piezoresistive processing technology processing and
Quality inspection.
2 normative reference documents
The following documents are indispensable for the application of this document. For dated references, only the dated edition applies to this article
Pieces. For undated references, the latest edition (including all modifications) applies to this document.
GB/T 19022 measurement management system measurement process and measuring equipment requirements
GB/T 26111 terminology for microelectromechanical systems (MEMS)
Code for design of clean building of GB 50073
3 terms and definitions
GB/T 26111 Definitions of terms and definitions apply to this document.
4 process flow
4.1 Overview
The bulk silicon piezoresistive process includes the preparation of silicon die-pressing zone, wafer isolation zone preparation, silicon wafer back cavity etching, wafer lead preparation, glass sheet
The preparation of silicon - glass bonding and bonding silicon surface etching and other parts, of which the key process with (G) said.
4.2 Wafer selection
4.2.1 The choice of silicon material should be determined in conjunction with the performance requirements of the manufactured device and the subsequent process requirements, such as n-type, light doping, resistivity
For 2Ωcm and so on.
4.2.2 The choice of silicon crystal face should be based on the subsequent process selection. Potassium hydroxide (KOH) or tetrakis are used in the subsequent process steps
When the methyl ammonium hydroxide (TMAH) is used to etch the wafer back cavity, a silicon wafer of (100) crystal face should be used.
4.3 Preparation of silicon wafer piezoresistive area
Wafer pressure zone preparation shown in Figure 1, including cleaning, lithography, ion implantation, impurity atomic diffusion, impurity atomic propulsion processes, specific
Including the following steps.
a) wafer preparation, and do the necessary cleaning;
b) Preparation of silica on the surface of the silicon wafer by thermal oxidation;
c) silicon photolithography, the formation of light boron injection area graphics;
Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 32815-2016_English be delivered?Answer: Upon your order, we will start to translate GB/T 32815-2016_English as soon as possible, and keep you informed of the progress. The lead time is typically 2 ~ 4 working days. The lengthier the document the longer the lead time. Question 2: Can I share the purchased PDF of GB/T 32815-2016_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 32815-2016_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet. Question 3: Does the price include tax/VAT?Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countriesQuestion 4: Do you accept my currency other than USD?Answer: Yes. If you need your currency to be printed on the invoice, please write an email to [email protected]. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.
|