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GB/T 31225-2014: Test method for the thickness of silicon oxide on Si substrate by ellipsometer
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| GB/T 31225-2014 | English | 229 |
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Test method for the thickness of silicon oxide on Si substrate by ellipsometer
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GB/T 31225-2014
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Basic data | Standard ID | GB/T 31225-2014 (GB/T31225-2014) | | Description (Translated English) | Test method for the thickness of silicon oxide on Si substrate by ellipsometer | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | J04 | | Classification of International Standard | 17.040.01 | | Word Count Estimation | 10,163 | | Date of Implementation | 4/15/2015 | | Quoted Standard | JJF 1059.1-2012 | | Regulation (derived from) | People's Republic of China Announcement of Newly Approved National Standards 2014 No. 22 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This Standard specifies the method for measuring the thickness of a thin layer of silicon dioxide. This Standard applies to the test silicon substrate uniform thickness, isotropic, 10nm ~ l 000 nm thick silicon dioxide layer thickness, the other to the te | GB/T 31225-2014: Test method for the thickness of silicon oxide on Si substrate by ellipsometer---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for the thickness of silicon oxide on Si substrate by ellipsometer
ICS 17.040.01
J04
National Standards of People's Republic of China
Ellipsometer measurements on silicon surface of the silica
The thickness of the thin layer method
Issued on. 2014-09-30
2015-04-15 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
This standard was proposed by the Chinese Academy of Sciences.
This standard by the National Standardization Technical Committee of nano technology (SAC/TC279) centralized.
This standard was drafted. Shanghai Jiaotong University, nano-technology and application National Engineering Research Center.
The main drafters of this standard. Kim Seung-yu, Li Wei, Liang Qi, Lu Qinghua, Dannong, Zhang Bing.
Introduction
Conventional ellipsometry technique for measuring film thickness of the sample pervasive, General Instrument mostly variable wavelength variable angle spectroscopic ellipsometer type, relative
Given angle in a given wavelength of light extinction ellipsometry measurements, ellipsometry can get more information for the model fit to get accurate film thickness knot
Fruit; In addition, since the material is traceable standard silicon surface of the silica thin reason, this standard specifies the use of continuously variable wavelength, variable angle
Spectral type ellipsometer measuring the thickness of the silicon surface of the silica thin layer method.
Ellipsometer measurements on silicon surface of the silica
The thickness of the thin layer method
1 Scope
This standard gives a continuous variable wavelength, variable angle spectroscopic ellipsometer type silicon dioxide layer thickness measurements on silicon surfaces
method.
This standard applies to the test silicon substrate thickness uniform, isotropic, 10nm ~ 1000nm thick silicon dioxide layer thickness, other
Monolayer on the substrate dielectric film thickness measurement test sample at a wavelength of opaque can refer to this method.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
JJF1059.1-2012 Evaluation and Expression of Uncertainty in Measurement
3 Terms and Definitions
The following terms and definitions apply to this document.
3.1
Ellipsometry technique elipsometer
Use change in the polarization state of the polarized light beam reflected or transmitted when appearing on the screen and film studies between two media interface or film made
An optical method for raw phenomena and their properties.
3.2
Fresnel reflection law fresnellawofreflection
When natural light is incident on the interface, can be decomposed into two equal and mutually perpendicular plane polarized light to s indicate normal incidence
Surface, p represents a parallel incident surface, and the vibration component s and p components are independent of each other.
3.3
Linearly polarized light linearlypolarizedlight
Light vector vibration in one direction only, that is, the propagation of light in the process of vibration of the electric vector is limited to within a defined plane, also known as partial plane
Polarized light.
3.4
Elliptically polarized elipticalpolarizedlight
The same two frequencies, the vibration direction perpendicular to each other and the spread of synthetic linearly polarized in the same direction, and the endpoint of its electric vector in an inner surface wave
An elliptical trajectory is depicted.
4 works
Elliptic functions ρ ellipsometry technique available film showing the reflection film is formed ellipsometry polarization characteristics, can be expressed as the formula (1) and (2).
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