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GB/T 25188-2010 English PDF

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GB/T 25188-2010: Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy
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GB/T 25188-2010English229 Add to Cart 3 days [Need to translate] Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy Valid GB/T 25188-2010

PDF similar to GB/T 25188-2010


Standard similar to GB/T 25188-2010

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Basic data

Standard ID GB/T 25188-2010 (GB/T25188-2010)
Description (Translated English) Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard G04
Classification of International Standard 71.040.40
Word Count Estimation 10,124
Date of Issue 2010-09-26
Date of Implementation 2011-08-01
Quoted Standard GB/T 22461; GB/T 19500; GB/T 21006; GB/T 22571
Regulation (derived from) National Standard Approval Announcement 2010 No.6 (Total No.161)
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary This standard specifies a method for accurate measurement of ultra-thin silicon wafer surface silicon oxide layer thickness. That X -ray photoelectron spectroscopy (XPS). This standard applies to the thermal oxidation method to accurately measure the thickness of the ultrathin silicon oxide layer of the silicon wafer surface preparation. Typically, the thickness of the silicon oxide layer is not greater than the standard applicable 6nm.

GB/T 25188-2010: Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy


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Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy ICS 71.040.40 G04 National Standards of People's Republic of China Measuring the thickness of thin silicon oxide layer of the silicon wafer surface X-ray photoelectron spectroscopy Issued on. 2010-09-26 2011-08-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard by the National Standardization Technical Committee microbeam analysis and focal points. This standard was drafted. Institute of Chemistry, China Institute of Metrology. Drafters of this standard. Liu Fen, Wang, Zhao Liang-Zhong, Song Xiaoping, Zhao Zhijuan, Qiu Li Mei.

Introduction

A silicon oxide film of the silicon wafer surface has long been used as a key component --- silicon field effect transistor gate oxide layer, it Reliability is crucial Micronanoelectronic devices and integrated circuits. As device feature sizes shrinking, the gate oxide layer becomes more and more Thin, it has now reached about 1nm. Preparation and Quality silicon thin gate oxide layer thickness control requirements for its accurate measurement. E.g, International Technology Roadmap for Semiconductors (ITRS) has proposed ultra-thin gate oxide thickness measurement standard uncertainty of 1.3% to reach Expectations. Currently, the industry generally use ellipsometry method to determine the layer thickness of 10nm or more. However, the elliptical polarization spectrophotometry The surface is very sensitive to pollutants, it is difficult to accurately measure the thickness of thin layers below 10nm. Over the past decade, as the representative to MPSeah Study Groups table using X-ray photoelectron spectroscopy (XPS) technology in the surface of a silicon wafer thin silicon oxide layer thickness accurate measurements done a great The amount of work; by the attenuation length correction factors carefully calculated and experimental conditions as well as the right choice, so accurate measurement of the surface of a silicon wafer Ultrathin silicon oxide layer thickness is achieved, the uncertainty of measurement results can be achieved within 2% [1,2]. In China, the China Institute of Metrology Institute of Chemistry and co-adopt Seah proposed by XPS method has participated in two of the silicon wafer surface ultrathin silicon oxide layer International Comparison of thickness measurement and achieved international equivalent degree, but also on the XPS measurement important experimental conditions (such as photoelectron emission angle and crystal Test sample azimuth body) has been amended. Given the micro and nano electronics and other industries for the accurate measurement of the surface of the silicon wafer thin silicon oxide layer thickness needs now to develop this standard. Measuring the thickness of thin silicon oxide layer of the silicon wafer surface X-ray photoelectron spectroscopy

1 Scope

This standard specifies the method for accurate measurement of the surface of a silicon wafer thin silicon oxide layer thickness, that is, X-ray photoelectron spectroscopy (XPS). This standard applies to the accurate measurement of thermal oxidation of the silicon wafer surface preparation of ultrathin silicon oxide layer thickness; usually, this standard applies The silicon oxide layer is thicker than 6nm.

2 Normative references

The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Study whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard. GB/T 22461 Surface chemical analysis - Vocabulary (GB/T 22461-2008, ISO 18115.2001, IDT) GB/T 19500 X-ray photoelectron spectroscopy analysis General GB/T 21006 Surface chemical analysis - X-ray photoelectron spectroscopy and Auger electron spectroscopy Linearity of intensity scale (GB/T 21006-2007, ISO 21270.2004, IDT) GB/T 22571 Surface chemical analysis - X-ray photoelectron spectrometer energy scale calibration (GB/T 22571-2008, ISO 15472.2001, IDT)

3 Symbol

The following symbols apply to this standard. The silicon oxide layer thickness d (nm); L Si2p photoelectrons in the silicon oxide layer decay length (nm); Si2p R peak intensity of silicon oxide and elemental silicon material ratio; photoelectron emission angle θ, defined as photoemission direction normal to the sample plane angle (°); Ф azimuth sample, as described for Si (100) sample (111) surface is cut along the boundary side [110] direction of 10mm square Shape, i.e. it is zero azimuth along the [110] direction ([deg.); I Si2p silicon oxide and elemental silicon peak intensity; I∞ silicon and Si2p peak intensity elemental silicon oxide material; u measurement uncertainty components; uC standard measurement uncertainty; U expanded measurement uncertainty; λ inelastic mean free path (nm); λtr migration mean free path (nm); ω λ/(λ λtr); Z atomic number.

4 Summary of Method

4.1 Description The basic principle of XPS see the national standard GB/T 19500. GB/T 22461 established terminology applicable to this standard.

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