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GB/T 22572-2008: Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for estimating depth resolution parameters with multiple delta-layer reference materials
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Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for estimating depth resolution parameters with multiple delta-layer reference materials
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GB/T 22572-2008
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Basic data | Standard ID | GB/T 22572-2008 (GB/T22572-2008) | | Description (Translated English) | Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for estimating depth resolution parameters with multiple delta-layer reference materials | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | G04 | | Classification of International Standard | 71.040.40 | | Word Count Estimation | 7,710 | | Date of Issue | 2008-12-11 | | Date of Implementation | 2009-10-01 | | Quoted Standard | GB/T 22461 | | Adopted Standard | ISO 20341-2003, IDT | | Regulation (derived from) | National Standard Approval Announcement 2008 No.19 (Total No.132) | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the SIMS depth profiling, use multi-layer reference material to assess the forefront of �� decay length, trailing edge decay length and depth resolution Gaussian broadening three step parameters. Because of the physical and chemical state of a sample surface affected by the incident ions and unstable, this standard does not apply to �� layer near the surface region. | GB/T 22572-2008: Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for estimating depth resolution parameters with multiple delta-layer reference materials
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Surface chemical analysis. Secondary-ion mass spectrometry. Method for estimating depth resolution parameters with multiple delta-layer reference materials
ICS 71.040.40
G04
National Standards of People's Republic of China
GB/T 22572-2008/ISO 20341.2003
Surface chemical analysis - Secondary ion mass spectrometry
Reference material layer multi δ
Assess the depth resolution parameters method
(ISO 20341.2003, IDT)
Posted 2008-12-11
2009-10-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard is identical with ISO 20341.2003 "Surface chemical analysis - Secondary ion mass spectrometry --- --- multi-layer reference substance assessment deep δ
The method of resolution parameters. "
For ease of use, the standard ISO 20341.2003 made the following editorial changes.
--- Remove the original preface of international standards;
--- Present international standard to this standard.
Appendix A of this standard is a normative appendix.
This standard by the National Standardization Technical Committee microbeam analysis and focal points.
This standard is drafted by. Ministry of Information Industry materials for Quality Supervision and Inspection Center.
The main drafters of this standard. Manong agriculture, Heyou Qin, He Xiukun.
GB/T 22572-2008/ISO 20341.2003
Introduction
Depth resolution is secondary ion mass spectrometry (SIMS) depth profiling is an important parameter. However, in the SIMS analysis, the impact of the sputtering depth
The results of the analysis of many factors, including the ion beam induced mixing and segregation, a charge-driven diffusion, matrix effects, shapes and surface micro-craters
Morphology. Only by understanding and minimize the impact of the above factors, to get the best depth resolution.
Get the best depth-resolved analysis usually requires specific conditions, including ultra-low primary ion beam energy, grazing incidence, rotating sample, low
Cooling the sample temperature and so on, all of these conditions in the conventional SIMS analysis are difficult to meet. In addition, for each sample, the optimum points
Analysis of parameters may be quite different. Further, various instruments of factors, such as the shape of the crater, the identity of the ion beam, crater edge effect elimination, mass
The amount of interference, memory effect, residual gas effect, etc., will affect all aspects of the depth resolution.
Thus, under conventional SIMS analysis conditions, it is difficult to directly assess the depth resolution. This standard describes the decay length of the frontier, the trailing edge of decline
Concept of variable length and Gaussian broadening proposed measuring step for each parameter. Multi-δ layer reference materials can be used to assess conventional SIMS
Depth resolution parameters under analytical conditions.
GB/T 22572-2008/ISO 20341.2003
Surface chemical analysis - Secondary ion mass spectrometry
Reference material layer multi δ
Assess the depth resolution parameters method
1 Scope
This standard specifies the SIMS depth profiling, the multi-layer reference substance evaluation δ frontier decay length, the length of the trailing edge of decay and high
Adams broadening three steps depth resolution parameters.
Since the physical and chemical state of a sample surface affected by the incident ions and unstable, this standard does not apply to δ layer near surface region.
2 Normative references
The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent
Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 22461 Surface chemical analysis - Vocabulary (GB/T 22461-2008, ISO 18115.2001, IDT)
3 Symbol
AL, AT scale factor.
B, C scale factor.
I (z) with the secondary ion intensity of depth.
Z depth.
Depth z0 apparent peak.
λL frontier decay length.
After λT along the length of decay.
σ Gaussian broadening.
It requires more than 4 δ-layer reference materials
According to the definition of 4.1 GB/T 22461 in δ layers, preferably a layer of a single atomic layer δ. However, it is not always possible to produce a layer or verification δ
Single atomic layer thickness. If there is no ideal δ layer can, in line with the non-ideal δ layer as specified below may also reference substance.
4.2 SIMS depth profiling of matrix sputtered surface layer should not be changed, so the matrix effect or there will be no significant change in the rate of erosion. wear
When over-δ layer table constant matrix elements of the secondary ion intensity BenQ body does not change.
4.3 and δ surface layer should be flat and parallel to each other, in order to avoid any distortion SIMS depth profiling.
4.4 δ-doped layer thickness should be much smaller than a projection range of ions, such small changes in thickness will not affect the shape of the curve analysis.
4.5 spacing δ adjacent layers should be large enough for the valley between the layers of secondary ionic strength value less than 1% of the peak.
4.6 δ layer thickness, interface roughness position and should be used HRTEM, grazing incidence X-ray reflectivity, the ion energy dispersion
Radio spectrum or other suitable method to determine.
5 Steps
5.1 In order to adjust and optimize the settings, secondary ion mass spectrometry analysis conditions (such as ion energy, ion species, ion current, secondary ion electrode
Sex, a beam scanning area, the analysis region, a beam stability, sample introduction, to detect secondary ions) should follow the manufacturer's instructions
GB/T 22572-2008/ISO 20341.2003
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