GB/T 5593-2015 PDF English
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Structure ceramic materials used in electronic component and device
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| GB/T 5593-1996 | English | 559 |
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GB/T 5593-2015: PDF in English (GBT 5593-2015) GB/T 5593-2015
GB
NATIONAL STANDARD OF THE
PEOPLE’S REPUBLIC OF CHINA
ICS 31-030
L 90
Replacing GB/T 5593-1996
Structure ceramic materials used in electronic component
and device
ISSUED ON: MAY 15, 2015
IMPLEMENTED ON: JANUARY 01, 2016
Issued by: General Administration of Quality Supervision, Inspection and
Quarantine;
Standardization Administration of the People’s Republic of China.
Table of Contents
Foreword ... 3
1 Scope ... 5
2 Normative references ... 5
3 Terms and definitions ... 6
4 Requirements ... 10
5 Test methods ... 12
6 Inspection rules ... 18
7 Marking, packaging, transportation and storage ... 19
Appendix A (Normative) Test method for Vickers hardness of structure ceramic
materials used in electronic component and device ... 21
Structure ceramic materials used in electronic component
and device
1 Scope
This Standard specifies the types, grades, technical indicator requirements, test methods
and inspection rules of structure ceramics for electronic component and device.
This Standard applies to structure ceramic materials used in electronic component and
device.
2 Normative references
The following referenced documents are indispensable for the application of this
document. For dated references, only the edition cited applies to this document. For
undated references, the latest edition (including any amendment) applies to this
document.
GB/T 1031-1995, Surface roughness - Parameters and their values
GB/T 1966, Test method for apparent porosity and bulk density of porous ceramic
GB/T 2413, Piezoelectric ceramic materials - Measuring methods for determination
of volume density
GB/T 2421.1, Environmental testing for electric and electronic products - general
and guidance
GB/T 5594.1, Test methods for properties of structure ceramic used in electronic
components - Test method for gas-tightness
GB/T 5594.2, Test methods for properties of structure ceramic used in electronic
components - Test method for Young elastic modulus and Poisson ratio
GB/T 5594.3, Test methods for properties of structure ceramic used in electronic
components and device - Part 3: Test method for mean coefficient of linear expansion
GB/T 5594.4, Test methods for properties of structure ceramic used in electronic
component and device - Part 4: Test method for permittivity and dielectric loss angle
tangent value
GB/T 5594.5, Test methods for properties of structure ceramic used in electronic
components - Test method for volume resistivity
Ceramics with original enstatite (MgSiO3) as the main crystal phase. It is characterized
by high mechanical strength, low dielectric loss angle and high insulation resistivity, as
well as poor thermal stability.
Note: Steatite ceramics is mainly used to manufacture various types of insulators, coil
bobbins, high-frequency porcelain shafts, band switches, tube holders and
resistor substrates, etc. It is also used in the manufacture of various high-voltage
and high-dielectric capacitors.
3.4
Forsterite ceramics
Ceramics, with magnesium silicate (Mg2SiO4) as the main crystal phase, containing a
certain amount of barium glass phase. It is characterized by high mechanical strength,
excellent dielectric properties, and a coefficient of linear expansion similar to that of
metal titanium, which therefore allows a good sealing-in with metal titanium. Its
disadvantage is poor thermal stability.
Note: Forsterite ceramics is used to manufacture insulating parts of electron tubes and
semiconductor devices, and is widely used in small cermet tubes. In addition, it
is also used in the manufacture of resistor substrates and ceramic capacitors.
3.5
Alumina ceramics
Ceramics, with alumina as the main component and α-Al2O3 as the main crystal phase,
such as A-75 ceramics, A-95 ceramics, A-97 ceramics, A-99.9 ceramics, etc. It is
characterized by high mechanical strength, excellent dielectric properties at high
temperatures, good vacuum air tightness, low dielectric loss, high hardness, good
thermal conductivity, high temperature resistance, wear resistance, corrosion resistance,
oxidation resistance and the like.
Note: It is mainly used in the manufacture of insulating structural parts of ultra-high
frequency and high-power electric vacuum devices, thick film, thin film and
microwave integrated circuit substrates, shells and brackets of silicon rectifiers,
and radome etc.
3.6
Porous alumina ceramics
Ceramics – containing a large number of closed pores and through open pores – whose
main component is α-Al2O3. The pores are required to be evenly distributed, and have
a certain mechanical strength, which can withstand thermal shocks.
Note: It can be used as a support in the tube, a catalyst carrier, etc.
3.7
Beryllia ceramics
Ceramics, of which the main crystal phase is beryllium oxide with wurtzite structure,
and the secondary crystal phase is magnesium-aluminum-beryllium compound.
According to the content of beryllium oxide, it can be divided into B-95 ceramics and
B-99 ceramics. It is characterized by high thermal conductivity; its thermal conductivity
is almost equal to that of pure aluminum. It has superior thermal shock resistance, and
its electrical properties are similar to alumina ceramics.
Note: It is used to make transistor shells, tube sockets, heat sinks, high-power integrated
circuits and microwave integrated circuit substrates, microwave windows, and
reducers for space technology and atomic energy neutron, etc.
3.8
Aluminium nitride ceramics
Ceramics whose main crystal phase is mainly aluminum nitride (AlN). White color;
hexagonal crystal; good thermal conductivity, second only to beryllia ceramics; a high
thermal conductivity material; good thermal shock resistance; stable chemical
properties.
Note: It is used for the manufacture of ceramic substrates for high-power thick-film
integrated circuits, substrates for high-power semiconductor devices and ultra-
large-scale integrated circuits; it can also be used as high-temperature corrosion-
resistant materials, etc.
3.9
Boron nitride ceramics
Ceramics, with boron nitride as the main component, whose crystal structure is
hexagonal or cubic. Boron nitride ceramics with a hexagonal structure is similar to
graphite – with good lubricity and low hardness, easy to machine – which is a good
machinable material. Cubic boron nitride ceramics has high hardness, similar to
diamond. Boron nitride ceramics, of low density, good thermal and chemical stability,
has outstanding features such as high thermal conductivity and low electrical
conductivity, easy processing, as well as excellent lubricating properties; it also has
good high temperature resistance; its high temperature performance is better than
alumina porcelain; it has penetrating ability to microwave radiation.
Note: It can be used for radar windows, as well as for high-power transistor sockets,
tube shells, heat sinks and microwave output windows.
3.10
For A-90, A-95, A-99, A-99.5, B-97, B-99 ceramic materials, the specified temperature
is 800 °C ± 10 °C, repeated 10 times is qualified.
For M2S ceramic materials, the test temperature is 400 °C ± 10 °C, repeated five times
is qualified.
5.9 Coefficient of linear expansion
When measuring the coefficient of linear expansion of ceramic materials, it shall be
carried out according to the method specified in GB/T 5594.3.
5.10 Thermal conductivity
When measuring the thermal conductivity of ceramic materials, it shall be carried out
according to the method specified in GB/T 5598.
5.11 Dielectric constant and dielectric loss tangent
5.11.1 Dielectric constant and dielectric loss tangent (1 MHz)
When measuring the dielectric constant and dielectric loss tangent of ceramic materials
at 1 MHz or under high temperature conditions, it shall be carried out according to the
method specified in GB/T 5594.4.
5.11.2 Dielectric constant and dielectric loss tangent (10 GHz)
When measuring the dielectric constant and dielectric loss tangent of ceramic materials
at 10 GHz, it shall be carried out according to the method specified in GB/T 5597.
5.12 Volume resistivity
When measuring the volume resistivity of ceramic materials, it shall be carried out
according to the method specified in GB/T 5594.5.
5.13 Breakdown strength
When measuring the breakdown strength of ceramic materials, it shall be carried out on
DC high-voltage equipment. The equipment shall ensure that the voltage can rise evenly,
the boosting rate is not greater than 1 000 V/s, and the voltage measurement error shall
not be greater than ±5%. See Table 2 for sample and electrode requirements. The test
shall be carried out in insulating oil or transformer oil with sufficient insulating
properties. When measuring the thickness, the error shall not be greater than ±0.002
mm.
The test result is calculated according to Formula (3):
Where:
E – electric strength of the sample, in kilovolts per millimeter (kV/mm);
U – breakdown voltage of the sample, in kilovolts (kV);
h – thickness of the sample, in millimeters (mm).
5.14 Chemical stability
When measuring the chemical stability of ceramic materials, it shall be carried out
according to the method specified in GB/T 5594.6.
5.15 Porosity
When measuring the porosity of ceramic materials, it shall be carried out according to
the method specified in GB/T 1966.
5.16 Grain size
When measuring the grain size of ceramic materials, it shall be carried out according to
the method specified in GB/T 5594.8.
5.17 Hardness
When measuring the hardness of ceramic materials, it shall be carried out according to
the method specified in Appendix A.
6 Inspection rules
6.1 Inspection classification
6.1.1 General
The inspection of ceramic materials is divided into ex-factory inspection (delivery
inspection) and type inspection (routine inspection).
6.1.2 Ex-factory inspection
Each batch of ceramic materials shall undergo ex-factory inspection according to the
test items specified in Table 3.
A.5 Samples
Test samples shall meet the following requirements:
a) Sample requirements: 1 cm × 1 cm square, thickness not less than 4 mm;
b) The parallelism between the test surface and the opposite machine surface is not
greater than 0.3 mm/cm;
c) The test surface shall be a smooth plane, and the roughness shall be no more than
0.8 μm according to the test value Ra specified in GB/T 1031-1995.
A.6 Test procedures
The test procedures are as follows:
a) Place the hardness testing machine on a solid foundation and adjust it to a level
with a levelness of 0.2/1 000;
b) Make the test surface of the sample perpendicular to the axis of the indenter;
c) Adjust the focal distance of the microscope;
d) Select the test force to be 49 N (5 kg). For special cases, the test force can be
selected separately, which shall be indicated in the test report;
e) Before the test or after replacing the indenter, use the corresponding standard
Vickers hardness block to verify whether the shape of the indentation and the
measured value of the hardness are correct;
f) Apply a load at a loading speed of 0.3 mm/s. There shall be no shock or vibration
during the test; keep the test force for 10 s ~ 15 s, and accurately measure the
diagonal length of the indentation;
g) The number of indentations on the same test surface shall not be less than 5;
h) The distance between the centers of two adjacent indentations is 10 ~ 15 times the
length of the diagonal of the indentation, and the distance from the center of the
indentation to the edge of the sample is at least 10 ~ 15 times the average length
of the diagonal of the indentation;
i) After the test, when the shape of the indentation on the test surface is incomplete
or deformed, the result is invalid.
A.7 Calculation of hardness value
The calculation formula of Vickers hardness is shown in Formula (A.1):
......
Source: Above contents are excerpted from the PDF -- translated/reviewed by: www.chinesestandard.net / Wayne Zheng et al.
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