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Database: 189759 (26 Oct 2025)
SJ 20789-2000 English PDF
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SJ 20789-2000
: Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor
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SJ 20789-2000
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Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor
SJ 20789-2000
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Basic data
Standard ID
SJ 20789-2000 (SJ20789-2000)
Description (Translated English)
Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor
Sector / Industry
Electronics Industry Standard
Classification of Chinese Standard
L44
Word Count Estimation
5,523
Date of Issue
2000-10-20
Date of Implementation
2000-10-20
Summary
This standard specifies the MOS field-effect transistor thermal parameters to the rapid screening test methods. This standard applies to MOS field effect transistor (hereinafter referred to as resistors) thermal parameters of rapid screening.
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