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SJ/T 9014.8.2-2018

Search Result of Chinese Standard: 'SJ/T 9014.8.2-2018'
Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusRelated Standard
SJ/T 9014.8.2-2018English359 Add to Cart Days<=4 (Semiconductor devices Discrete devices Part 8-2: Blank detail specification for superjunction metal oxide semiconductor field effect transistors) Valid SJ/T 9014.8.2-2018
SJ/T 9014.8.2-2018Chinese20 Add to Cart <=1-day [PDF from Chinese Authority, or Standard Committee, or Publishing House]  

   
Detail Information of SJ/T 9014.8.2-2018; SJ/T9014.8.2-2018
Description (Translated English): (Semiconductor devices Discrete devices Part 8-2: Blank detail specification for superjunction metal oxide semiconductor field effect transistors)
Sector / Industry: Electronics Industry Standard (Recommended)
Word Count Estimation: 17,150
Date of Issue: 2018-04-30
Date of Implementation: 2018-07-01
Regulation (derived from): Ministry of Industry and Information Technology Announcement No. 23 of 2018
Summary: This standard specifies the writing requirements and writing format for the detailed specification of super junction metal oxide semiconductor field effect transistors.


Related standard:   SJ/T 10012-2018
   
 
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