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SJ/T 9014.8.2-2018

Chinese Standard: 'SJ/T 9014.8.2-2018'
Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusRelated Standard
SJ/T 9014.8.2-2018English359 Add to Cart Days<=4 Semiconductor devices. Discrete devices - Part 8-2: Blank detail specification for super junction metal-oxide-semiconductor field-effect transistors Valid SJ/T 9014.8.2-2018
SJ/T 9014.8.2-2018Chinese20 Add to Cart <=1-day [PDF from Chinese Authority, or Standard Committee, or Publishing House]  

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BASIC DATA
Standard ID SJ/T 9014.8.2-2018 (SJ/T9014.8.2-2018)
Description (Translated English) (Semiconductor devices Discrete devices Part 8-2: Blank detail specification for superjunction metal oxide semiconductor field effect transistors)
Sector / Industry Electronics Industry Standard (Recommended)
Word Count Estimation 17,171
Date of Issue 2018-04-30
Date of Implementation 2018-07-01
Regulation (derived from) Ministry of Industry and Information Technology Announcement No. 23 of 2018
Summary This standard specifies the writing requirements and writing format for the detailed specification of super junction metal oxide semiconductor field effect transistors.

Related standard:   SJ 21419-2018  SJ 21420-2018
   
 
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