Standard Briefing:Stadard ID: GB/T 42789-2023
Stadard Title: Test method for gloss of silicon wafer
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| GB/T 42789-2023 | English | 189 |
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Test method for gloss of silicon wafer
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Basic Data: | Standard ID | GB/T 42789-2023 (GB/T42789-2023) | | Description (Translated English) | Test method for gloss of silicon wafer | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040 | | Word Count Estimation | 10,174 | | Date of Issue | 2023-08-06 | | Date of Implementation | 2024-03-01 | | Issuing agency(ies) | State Administration for Market Regulation, National Standardization Administration | Contents, Scope, and Excerpt:GB/T 42789-2023. Test method for surface gloss of silicon wafers
ICS 77.040
CCSH21
National Standards of People's Republic of China
Test method for silicon wafer surface gloss
Published on 2023-08-06
2024-03-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration Committee
Preface
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents"
Drafting.
Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents.
This document is jointly developed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards
It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2).
This document was drafted by. Zhejiang Jinruihong Technology Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Nonferrous Metal Technology Co., Ltd.
Ji Research Institute Co., Ltd., Tianjin Zhonghuan Leading Materials Technology Co., Ltd., Shandong Youyan Semiconductor Materials Co., Ltd., Shanghai Synthetic Silicon
Materials Co., Ltd., Mesker Electronic Materials Co., Ltd., Guangdong Jinwan Gaojing Solar Technology Co., Ltd., Zhejiang Xusheng Electronics
Co., Ltd., Chaohu University, Jinruihong Technology (Quzhou) Co., Ltd.
The main drafters of this document. Liang Xingbo, Li Qin, Zhang Haiying, Lin Songqing, Pan Jinping, Li Suqing, Zhang Xueyuan, You Bailing, Bian Yongzhi, Zhuang Zhihui,
Shen Huihui, Jiao Erqiang, Han Yunxiao, Xu Zhiqun, Fu Mingquan, Zhan Yufeng, Wang Kesheng.
Test method for silicon wafer surface gloss
Scope
This document describes a method for testing the surface gloss of silicon wafers using the light reflection method at 20°, 60° or 85° geometries.
This document is suitable for testing the surface gloss of silicon etched wafers, polished wafers, and epitaxial wafers. It is not suitable for testing silicon wafers with patterns on the surface.
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations
For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to
this document.
GB/T 9754 Determination of 20°, 60° and 85° specular gloss of paint and varnish films containing no metallic pigments
GB/T 14264 Semiconductor material terminology
JJG696-2015 Mirror gloss meter and gloss plate
Terms and definitions
The terms and definitions defined in GB/T 9754 and GB/T 14264 and the following apply to this document.
3.1
gloss gloss
For a specified light source and acceptance angle, the luminous flux reflected from the specular direction of an object is the same as the specular direction of black glass with a refractive index of 1.567.
The ratio of reflected light flux.
Note 1.In order to determine the scale of specular gloss, the gloss value is specified for polished black glass with a refractive index of 1.567 at geometric angles of 20°, 60° and 85°.
is 100.
Note 2.The evaluation of the glossiness of the back side of the double-sided silicon polished wafer is calculated based on the glossiness of the front side of the polished wafer.
4 Method Principles
Under the conditions of the specified incident angle and the specified beam, the incident light shines on the sample surface through the lens, and the light in the direction of the specular reflection angle is obtained.
Beam, at this time, the reflected light intensity is determined by the surface properties of the sample material. The receiver collects the sample reflected light and compares it with the standard surface reflected light intensity.
Calculate and finally obtain the surface gloss of the sample. The schematic diagram of the glossiness test light path is shown in Figure 1.
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