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JJF 2009-2022 English PDF

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JJF 2009-2022: Calibration Specification for Semiconductor Parameters Precision Analyzers
Status: Valid

JJF 2009: Evolution and historical versions

Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
JJF 2009-2022English749 Add to Cart 6 days [Need to translate] Calibration Specification for Semiconductor Parameters Precision Analyzers Valid JJF 2009-2022
JJF 2009-2016EnglishRFQ ASK 3 days [Need to translate] (Radio frequency and microwave power measurement instrument verification system table) JJF 2009-2016

Standard similar to JJF 2009-2022

JJF 1030   JJF 2009   JJG 2009   

Basic data

Standard ID JJF 2009-2022 (JJF2009-2022)
Description (Translated English) Calibration Specification for Semiconductor Parameters Precision Analyzers
Sector / Industry Metrology & Measurement Industry Standard
Word Count Estimation 38,359
Date of Issue 2022-12-07
Date of Implementation 2023-06-07
Issuing agency(ies) State Administration for Market Regulation

JJF 2009-2022: Calibration Specification for Semiconductor Parameters Precision Analyzers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
National Metrology Technical Specifications of the People's Republic of China Calibration specification for semiconductor parameter precision analyzer Released on 2022-12-07 2023-06-07 Implementation Released by the State Administration for Market Regulation Semiconductor parameter precision analyzer Calibration specification Responsible unit. National Radio Metrology Technical Committee Main drafting unit. China Electronics Standardization Research Institute Participating in the drafting unit. China Institute of Metrology The Thirteenth Research Institute of China Electronics Technology Group Corporation This specification entrusts the National Radio Measurement Technical Committee to be responsible for interpretation The main drafters of this specification. Xu Yingchun (China Electronics Standardization Institute) Liu Chong (China Electronics Standardization Institute) Yu Lihong (China Electronics Standardization Institute) Participating drafters. Gao Ying (National Institute of Metrology) Qiao Yu'e (The Thirteenth Research Institute of China Electronics Technology Group Corporation)

Table of contents

Introduction (Ⅱ) 1 Scope(1) 2 References(1) 3 Overview(1) 4 Metrological characteristics(1) 4.1 DC current output(1) 4.2 DC current measurement(1) 4.3 DC voltage output(2) 4.4 DC voltage measurement (2) 4.5 Pulse current(2) 4.6 Frequency(2) 4.7 Capacitance measurement(2) 5 Calibration conditions(2) 5.1 Environmental conditions (2) 5.2 Measuring standards and other equipment (2) 6 Calibration Items and Calibration Methods(4) 6.1 Calibration items(4) 6.2 Appearance and normality inspection (4) 6.3 DC current output(4) 6.4 DC current measurement(6) 6.5 DC voltage output(7) 6.6 DC voltage measurement(8) 6.7 Pulse current(9) 6.8 Frequency(10) 6.9 Capacitance measurement(11) 7 Expression of Calibration Results(11) 8 Recalibration interval(12) Appendix A Original Record Format (13) Appendix B Calibration Certificate Inner Page Format (17) Appendix C Example of Calibration Uncertainty Assessment of Main Items (21)

Introduction

JJF 1071-2010 "Rules for Writing National Metrology Calibration Standards" and JJF 1059.1-2012 "Uncertainty in Measurement" Degree Assessment and Representation together constitute the basic series of specifications supporting the compilation of this specification. This specification is published for the first time. Calibration specification for semiconductor parameter precision analyzer

1 Scope

This specification is applicable to half of voltage measuring range ±(0.1V~3000V) and current measuring range±(1pA~1500A). Calibration of conductor parameter precision analyzers.

2 References

This specification does not refer to documents.

3 Overview

The semiconductor parameter precision analyzer (hereinafter referred to as the instrument to be calibrated) is mainly composed of a high-power power supply/measurement unit, a medium power High rate power source/measurement unit, high current power source/measurement unit, high voltage power source/measurement unit, medium current power source/measurement unit Element, multi-frequency capacitance measurement unit, ultra-large current expander and other parts, through the pressure current measurement and current pressure measurement mode Realize IV and CV curve scanning, so as to complete diodes, transistors, field effect transistors (MOSFET) and absolute Accurate measurement of breakdown voltage, leakage current, junction capacitance and other parameters of semiconductor devices such as edge-gate bipolar transistors (IGBT) secret test. The principle block diagram is shown in Figure 1. Figure 1 Schematic block diagram of the instrument to be calibrated

4 Metrological characteristics

4.1 DC current output 4.1.1 Output range. ±(1pA~10μA); maximum allowable error. ±(0.3%~6%).

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