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Micro-electromechanical systems (MEMS) technology - Technical specification of automotive grade pressure sensor based on MEMS technology
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GB/T 44531-2024
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Basic data | Standard ID | GB/T 44531-2024 (GB/T44531-2024) | | Description (Translated English) | Micro-electromechanical systems (MEMS) technology - Technical specification of automotive grade pressure sensor based on MEMS technology | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L59 | | Classification of International Standard | 31.080.99 | | Word Count Estimation | 18,144 | | Date of Issue | 2024-09-29 | | Date of Implementation | 2024-09-29 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 44531-2024: Micro-electromechanical systems (MEMS) technology - Technical specification of automotive grade pressure sensor based on MEMS technology
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.080.99
CCSL59
National Standard of the People's Republic of China
Micro-electromechanical systems (MEMS) technology is based on MEMS
Technical specifications for automotive-grade pressure sensors
Released on 2024-09-29
2024-09-29 implementation
State Administration for Market Regulation
The National Standardization Administration issued
Table of Contents
Preface III
1 Scope 1
2 Normative references 1
3 Terms and Definitions 2
4 Categories 2
4.1 Application Classification of Automotive-Grade Pressure Sensors 2
4.2 Classification of stress perception types 4
4.3 Functional Performance Status Classification (FPSC) 4
5 Basic Requirements 4
5.1 Type of measured medium 4
5.2 Operating temperature range 4
5.3 Storage temperature range 5
5.4 Signal output form 5
5.5 Working voltage 5
5.6 Measuring range 5
6 Technical Requirements 5
6.1 Appearance 5
6.2 Package Outline 5
6.3 Output Impedance 5
6.4 Insulation resistance 5
6.5 Dielectric strength 6
6.6 Overload voltage 6
6.7 Reverse protection voltage 6
6.8 Others 6
6.9 Environmental characteristics 6
7 Test methods 7
7.1 Environmental conditions 7
7.2 Performance 7
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents"
Drafting.
Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.
This document is proposed and coordinated by the National Micro-Electromechanical Technology Standardization Technical Committee (SAC/TC336).
This document was drafted by. Peking University, China Machinery Productivity Promotion Center Co., Ltd., Anhui Jingxin Sensing Technology Co., Ltd., Beijing Zhixin
Sensor Technology Co., Ltd., Wuhan University, Suzhou Nanochip Microelectronics Co., Ltd., State Grid Smart Grid Research Institute Co., Ltd., Shenzhen Speed
Tengjuchuang Technology Co., Ltd., Shenzhen Meisi Advanced Electronics Co., Ltd., Zhejiang Hanbo Automotive Sensor Co., Ltd., Southeast University, Industrial and
The Fifth Electronic Research Institute of the Ministry of Information Technology, Tianjin Xinzhi Perception Technology Co., Ltd., Institute of Microelectronics of the Chinese Academy of Sciences, Kunshan Shuangqiao Sensor Measurement
Control Technology Co., Ltd., Wuxi China Resources Shanghua Technology Co., Ltd., Beijing Zhixin Microelectronics Technology Co., Ltd., Shanghai Baolong Automotive Technology Co., Ltd.
Co., Ltd., Suzhou Jingfang Semiconductor Technology Co., Ltd., Midea Group Co., Ltd., Xinlian Integrated Circuit Manufacturing Co., Ltd.
China Inspection Group Southern Testing Co., Ltd., Ningbo CRRC Times Sensing Technology Co., Ltd., Beijing Jiuhao Electronic Technology Co., Ltd.,
China Shipbuilding Industry Corporation No. 716 Research Institute, Taiyuan Aviation Instrument Co., Ltd., Shandong Zhongkesier Technology Co., Ltd., Hebei Chu
Guang Auto Parts Co., Ltd., Jiangsu Furui Micro-Nano Sensing Technology Co., Ltd., Wuhan Feien Microelectronics Co., Ltd., Shenzhen Amperon Technology Co., Ltd.
Co., Ltd., Nanjing Gaohua Technology Co., Ltd., Nanjing Wotian Technology Co., Ltd., Songnuomo Technology Co., Ltd., Guangdong Run
Yu Sensor Co., Ltd., Zhengzhou Weisheng Electronic Technology Co., Ltd., Shenzhen Xinwei Technology Development Co., Ltd., Wuxi Xinganzhi Semiconductor
Co., Ltd., East China Institute of Optoelectronic Integrated Devices, Chongqing Wantai Electric Power Technology Co., Ltd., Henan Xinrui Electronic Technology Co., Ltd., Jiangsu
Pronov Electronics Co., Ltd., Hunan Qitai Sensing Technology Co., Ltd., Jiangxi Wardell Technology Co., Ltd., Beijing Yandong Microelectronics Technology Co., Ltd.
Technology Co., Ltd., Shanghai Yingsi Sensing Technology Co., Ltd., Huajing Sensing Technology (Wuxi) Co., Ltd., Mingshi Innovation (Yantai) Micro-Nano Sensing Technology
Technology Research Institute Co., Ltd., Suzhou Minxin Microelectronics Technology Co., Ltd., and Bengbu Sun and Moon Instrument Research Institute Co., Ltd.
The main drafters of this document are. Chen Demin, Li Genzi, Zhang Wei, Chen Guangzhong, Zhang Yating, Liu Sheng, Zhao Jia, Liang Xianfeng, Yang Yang, Wu Bin, Ye Xinqi,
Zhou Zaifa, Dong Xianshan, Wang Shuaiyu, Zhou Weihu, Wang Bing, Zhang Xinwei, Fang Dongming, Duan Hongjun, Yang Jianhong, Xiong Guilin, Ding Huan, Lü Yang, Chai Hong, Li Hui,
Yang Zhen, Chen Zhiwen, Zhao Ren, Shang Yanlong, Yao Minqiang, Wang Guanying, Huang Xinlong, Hou Xiaowei, Qian Feng, Liu Xuanjie, Chen Jinjin, Yuan Changzuo, Zhong Shengli,
Liu Rui, Cao Wan, Huang Zongbo, Li Weiping, Gao Feng, Lei Weiwu, Luo Xiaoyong, Gao Shengguo, Lü Zonghan, Hua Tiankai, Wang Wenjing, Tian Yongchao, Zheng Dongming,
Lu Minchen, Wang Guoqiu, Huang Liuxiao, Zhang Yanxiu, Ke Youxin, Miao Jianmin, Gao Feng, Li Gang, and Wang Rui.
Micro-electromechanical systems (MEMS) technology is based on MEMS
Technical specifications for automotive-grade pressure sensors
1 Scope
This document specifies the classification, basic requirements, technical requirements and test methods for automotive-grade pressure sensors based on MEMS technology.
This document is applicable to automotive-grade pressure sensors based on MEMS technology, and other pressure sensors may refer to it.
2 Normative references
The contents of the following documents constitute essential clauses of this document through normative references in this document.
For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to
This document.
GB/T 2423.22 Environmental testing Part 2.Test method Test N. Temperature change
GB/T 2423.33 Environmental testing Part 2.Test methods Test Kca. High concentration sulfur dioxide test
GB/T 2423.51 Environmental testing Part 2.Test methods Test Ke. Flowing mixed gas corrosion test
GB/T 4937.4 Mechanical and climatic test methods for semiconductor devices Part 4.Highly accelerated steady-state damp heat test (HAST)
GB/T 4937.12 Mechanical and climatic test methods for semiconductor devices Part 12.Swept frequency vibration
GB/T 4937.13 Mechanical and climatic test methods for semiconductor devices Part 13.Salt spray
GB/T 7665 General terminology for sensors
GB/T 18655 Radio disturbance characteristics of vehicles, ships and internal combustion engines - Limits and measurement methods for protecting on-board receivers
GB/T 19951 Test method for immunity of electrical/electronic components of road vehicles to electrostatic discharge
GB/T 21437.3 Test methods for electrical disturbances caused by conduction and coupling of electrical/electronic components of road vehicles Part 3.
Immunity to electrical transients coupled to non-power lines
GB/T 26111 Micro-electromechanical systems (MEMS) technical terms
GB/T 28046.5 Environmental conditions and testing for electrical and electronic equipment of road vehicles Part 5.Chemical loads
GB/T 33014.2 Test methods for immunity of electrical/electronic components of road vehicles to narrowband radiated electromagnetic energy Part 2.Electrical
Dark Chamber Method
GB/T 33014.4 Test methods for immunity of electrical/electronic components of road vehicles to narrowband radiated electromagnetic energy Part 4.Large
Current injection (BCI) method
GB/T 33014.9 Test methods for immunity of electrical/electronic components of road vehicles to narrowband radiated electromagnetic energy Part 9.
Portable Transmitter Method
JJG624-2005 Verification Procedure for Dynamic Pressure Sensors
IEC 60749-5 Mechanical and climatic test methods for semiconductor devices Part 5.Steady-state temperature and humidity bias life test (Semi-
biaslifetest)
IEC 60749-10 Mechanical and climatic test methods for semiconductor devices Part 10.Mechanical shock devices and assemblies (Semi-
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GB/T 44531-2024: Micro-electromechanical systems (MEMS) technology - Technical specification of automotive grade pressure sensor based on MEMS technology
Status: Valid
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