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US$609.00 · In stock Delivery: <= 5 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 43535-2023: High-purity germanium γ spectrometer Status: Valid
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High-purity germanium γ spectrometer
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GB/T 43535-2023
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Basic data | Standard ID | GB/T 43535-2023 (GB/T43535-2023) | | Description (Translated English) | High-purity germanium �� spectrometer | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | F81 | | Classification of International Standard | 17.240 | | Word Count Estimation | 30,331 | | Date of Issue | 2023-12-28 | | Date of Implementation | 2024-07-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration |
GB/T 43535-2023: High-purity germanium γ spectrometer---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 17:240
CCSF81
National Standards of People's Republic of China
High purity germanium gamma spectrometer
Published on 2023-12-28
2024-07-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration Committee
Table of contents
Preface III
1 Scope 1
2 Normative references 1
3 Terms and Definitions 1
4 Category 3
4:1 Overview 3
4:2 Fixed spectrometer 3
4:3 Portable Spectrometer 4
5 Technical requirements 4
5:1 Requirements for fixed spectrometers 4
5:2 Portable spectrometer requirements 7
5:3 Electrical safety10
5:4 Environmental adaptability10
5:5 Electromagnetic compatibility11
6 Test methods 12
6:1 General provisions for testing12
6:2 Fixed spectrometer 13
6:3 Portable spectrometer 16
6:4 Electrical safety18
6:5 Environmental adaptability test 19
6:6 Electromagnetic compatibility 20
7 Inspection Rules 21
7:1 Factory inspection 21
7:2 Type inspection 21
7:3 Inspection items 21
8 Marking, accompanying documents, transportation and storage22
8:1 Flag 22
8:2 Accompanying documents 23
8:3 Transport23
8:4 Storage 23
Reference 24
Foreword
This document complies with the provisions of GB/T 1:1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents"
Drafting:
Please note that some content in this document may be subject to patents: The publisher of this document assumes no responsibility for identifying patents:
This document is proposed and coordinated by the National Technical Committee on Standardization of Nuclear Instrumentation (SCA/TC30):
This document was drafted by: Tongfang Nuctech Technology Co:, Ltd:, Tsinghua University, China Institute of Metrology, China Atomic Energy Research Institute
Institute:
The main drafters of this document: Li Yulan, Li Yuanjing, Zhao Kun, He Li, Fu Yidong, Zhang Zhi, Gong Hui, Wu Yao, Huang Xunwang, Wei Hongyan, Zhang Tong,
Zhang Hong, Liang Juncheng, Hao Xiaoyong, Wei Kexin, Yu Haijun, Pan Hongwei, Li Xiuxia, Hu Chunxuan, Que Ziang:
High purity germanium gamma spectrometer
1 Scope
This document stipulates the classification and technical requirements of high-purity germanium gamma spectrometers (hereinafter referred to as "spectrometers"), describes the test methods, and also provides inspection regulations:
Regulations, markings, accompanying documents, transportation and storage are stipulated:
This document applies to the production, sales, management and production of high-purity germanium gamma spectrometers with coaxial semiconductor detectors (hereinafter referred to as "coaxial type"):
Testing etc: Reference for other types of high-purity germanium gamma spectrometers used in special or customized scenarios:
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text: Among them, the dated quotations
For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to
this document:
GB/T 191 Packaging, storage and transportation pictorial mark
GB/T 2423:56 Environmental testing Part 2: Test methods Test Fh: Broadband random vibration and guidelines
GB/T 2900:66-2004 Electrical terminology semiconductor devices and integrated circuits
GB/T 2900:97-2016 Electrical Terminology Nuclear Instruments Physical Phenomenon, Basic Concepts, Instruments, Systems, Equipment and Detectors
GB/T 3785:1 Electroacoustic sound level meter Part 1: Specifications
GB/T 4208 Shell protection level (IP code)
GB 4793:1 Safety requirements for electrical equipment for measurement, control and laboratory use Part 1: General requirements
GB/T 4960:6-2008 Nuclear scientific and technical terminology Part 6: Nuclear instrumentation
GB/T 7167 Test method for germanium gamma ray detectors
GB/T 8993-1998 Nuclear instrument environmental conditions and test methods
GB/T 13306 Signage
GB/T 17626:2 Electromagnetic compatibility measurement technology electrostatic discharge immunity test
GB/T 17626:3 Electromagnetic compatibility testing and measurement technology Radio frequency electromagnetic field radiation immunity test
GB/T 17626:4 Electromagnetic compatibility test and measurement technology Electrical fast transient pulse group immunity test
GB/T 17626:5 Electromagnetic compatibility testing and measurement technology surge (impact) immunity test
GB/T 17626:8 Electromagnetic compatibility testing and measurement technology power frequency magnetic field immunity test
GB 17799:4 Electromagnetic compatibility Part 4: Emissions in general standards industrial environments
JJF1850-2020 Calibration specifications for germanium gamma-ray spectrometers
3 Terms and definitions
GB/T 2900:66-2004, GB/T 2900:97-2016, GB/T 4960:6-2008 and JJF1850-2020 and
The following terms and definitions apply to this document:
3:1
impurity
Atoms of other elements in single element semiconductors; atoms of other elements in compound semiconductors or crystal structures related to compound semiconductors
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