Powered by Google www.ChineseStandard.net Database: 189759 (16 Jun 2024)

NB/T 20019-2010 PDF in English


NB/T 20019-2010 (NB/T20019-2010, NBT 20019-2010, NBT20019-2010)
Standard IDContents [version]USDSTEP2[PDF] delivered inName of Chinese StandardStatus
NB/T 20019-2010English220 Add to Cart 0-9 seconds. Auto-delivery. Ageing, screening, and derating rules of electronic elements and devices in safety class instrument and control equipment of nuclear power plants Valid

PDF Preview

Standards related to: NB/T 20019-2010

NB/T 20019-2010: PDF in English (NBT 20019-2010)

NB/T 20019-2010
ENERGY INDUSTRY STANDARD OF
THE PEOPLE’S REPUBLIC OF CHINA
ICS 27.120.99
F 81
Record No.: 29117-2010
Replacing EJ/T 504-1990
Ageing, screening, and derating rules of electronic
elements and devices in safety class instrument and
control equipment of nuclear power plants
ISSUED ON: MAY 01, 2010
IMPLEMENTED ON: OCTOBER 01, 2010
Issued by: National Energy Administration
Table of Contents
Foreword ... 3 
1 Scope ... 4 
2 Normative references ... 4 
3 Terms and definitions ... 5 
4 Sequence and items of ageing and screening ... 6 
5 Ageing and screening conditions and methods ... 7 
5.1 Prerequisites for ageing and screening ... 7 
5.2 Appearance check ... 7 
5.3 High-temperature storage ... 8 
5.4 Temperature cycling ... 9 
5.5 Power burn-in ... 9 
5.6 High-temperature reverse bias ... 10 
5.7 Test ... 10 
5.8 Marks ... 10 
6 Ageing and screening conformity rules ... 11 
7 Derating rules for elements and devices ... 11 
7.1 Overview ... 11 
7.2 Diodes ... 11 
7.3 Transistors ... 11 
7.4 Optoelectronic devices ... 12 
7.5 Thyristors ... 12 
7.6 Analog integrated circuit ... 12 
7.7 Digital integrated circuit ... 12 
7.8 Resistance ... 13 
7.9 Potentiometers ... 13 
7.10 Capacitors ... 14 
Bibliography ... 21 
Ageing, screening, and derating rules of electronic
elements and devices in safety class instrument and
control equipment of nuclear power plants
1 Scope
This Standard specifies technical requirements for ageing, screening, and
derating of electronic elements and devices in safety class instrument and
control equipment of nuclear power plants.
This Standard is applicable to ageing, screening, and derating of electronic
elements and devices in safety class instrument and control equipment of
nuclear power plants. It can be also used as reference for ageing, screening,
and derating of electronic elements and devices in other safety class electrical
equipment.
2 Normative references
The following referenced documents are indispensable for the application of
this document. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any
amendments) applies.
GB/T 2423.2-2001, Environmental testing for electric and electronic products
- Part 2: Test methods - Tests B: Dry heat
GB/T 2423.22-2002, Environmental testing for electric and electronic
products - Part 2: Test methods Test N: Change of temperature
GJB 63B-2001, General specification for solid electrolyte / fixed capacitors
with reliability index
GJB 128A-1997, Test methods for semiconductor discrete devices
GJB 360A-1996, Test methods for electronic and electrical components
GJB 548A-1996, Test methods and procedures for microelectronic device
GJB 733A-1996, General specification for non-solid electrolyte tantalum
fixed capacitors with reliability index
3.9 ageing and screening
A technique or method of applying mechanical stress, electrical stress, optical
stress, and thermal stress to elements and devices separately or
simultaneously so as to identify and eliminate potential or original defects of the
elements and devices.
3.10 test
A complete environmental test procedure, generally including:
a) pre-conditioning (when necessary);
b) initial check (when necessary);
c) condition test;
d) recovery;
e) final testing.
An intermediate testing may be required during condition test and/or recovery.
3.11 pre-conditioning
A treatment on the test sample before the condition test so as to eliminate or
partially offset various effects previously experienced by the test sample.
3.12 recovery
A treatment to stabilize the performance of the test sample after the condition
test and before the final testing.
3.13 derating
The stress experienced by elements and devices during use is lower than its
rated value so as to delay the degradation of its parameters and improve the
reliability of use. It is usually expressed in terms of stress ratio and ambient
temperature.
3.14 stress ratio
The ratio of component working stress to rated stress. The stress ratio is also
called derating factor.
4 Sequence and items of ageing and screening
The purpose of ageing and screening to electronic elements and devices for
It shall conduct appearance check to elements and devices before and after the
ageing and screening tests.
During the initial appearance check or appearance re-check to elements and
devices, use visual check or a moderate magnifying glass to conduct the
appearance check.
5.2.2 Semiconductor discrete device
For semiconductor discrete devices, it shall check:
a) There shall be no mechanical damage, breakage, corrosion, etc. on the
outer leads or pins of the product;
b) The main body of the product shall not be deformed, necked, severely
peeled off, cracked;
c) The product model, polarity (diode) and other marks shall be clear and
correct.
5.2.3 Integrated circuit
For integrated circuits, it shall check:
a) The surface of the circuit shall be free from damage such as stains, rust,
and blistering of the plating;
b) The circuit case shall not be deformed or chipped. There shall be no
mechanical damage, corrosion on the lead wire;
c) The marks such as the type of circuit shall be clear and correct.
5.2.4 Resistors, capacitors, potentiometers
For resistors, capacitors, potentiometers, it shall check:
a) The main body of the product shall not be deformed or damaged. The lead
wire shall not be damaged, broken, rusted;
b) Product model, polarity (capacitor) and other marks shall be clear and
correct.
5.3 High-temperature storage
For semiconductor discrete devices and integrated circuits, it shall conduct the
high-temperature storage test.
Place the unpacked elements and devices in a high-temperature test chamber.
At the specified storage temperature, continuously store for a specified time.
transistors, field effect transistors). See Method 1015 in GJB 548A-1996 for
specific test methods for semiconductor integrated circuits, hybrid integrated
circuits. See GJB 733A-1996, GJB 63B-2001, GJB 972A-2002 for specific test
methods for capacitance.
The specific burn-in parameters are as follows:
a) Temperature:
1) For diodes, transistors, and field effect transistors, it shall conduct burn-
in at the normal laboratory temperature;
2) See Table 1 for the burn-in temperatures of optoelectronic devices,
thyristors, semiconductor integrated circuits, hybrid integrated circuits,
capacitors.
b) Load: see Table 1 for the burn-in load conditions of various elements and
devices;
c) Burn-in time: see Table 1 for the required burn-in time for different
elements and devices.
5.6 High-temperature reverse bias
For diodes, transistors, and field effect transistors, it shall conduct the high-
temperature reverse bias test. See Table 1 for the temperature conditions,
voltage and time of the reverse bias test. See Method 1038 in GJB 128A-1997
for the specific test method for diodes. See Method 1039 in GJB 128A-1997 for
specific test methods for transistors and small power field effect transistors. See
Method 1042 in GJB 128A-1997 for the specific test method for large power
field effect transistors.
5.7 Test
Under normal atmospheric conditions (i.e. normal laboratory environmental
conditions), according to the product specification or agreement, conduct the
room temperature test to the electrical parameters of elements and devices.
According to the ageing and screening sequence specified in Clause 4,
complete corresponding ageing and screening tests. Recover 1h under normal
laboratory conditions. Then conduct the final testing of the electrical parameters
to elements and devices one by one (100%) according to product specification
or design requirements.
5.8 Marks
For the elements and devices that have been aged and screened, it shall mark
according to related documents.
c) The power is 65%~75% of rated power.
7.4 Optoelectronic devices
The derating rules for optoelectronic devices are as follows:
a) The voltage is 70%~80% of rated voltage;
b) The operating current is 65%~80% of rated current.
7.5 Thyristors
The derating rules for thyristors are as follows:
a) The voltage is 70%~80% of rated voltage;
b) The operating current is 65%~80% of rated average on-state current.
7.6 Analog integrated circuit
The derating rules for analog integrated circuits are as follows:
a) The power supply voltage is less than rated value multiplied by derating
factor;
b) The input voltage is less than rated value multiplied by derating factor;
c) The input-output voltage difference is less than rated value multiplied by
derating factor;
d) The output current is less than rated value multiplied by derating factor;
e) The power is less than the maximum allowable value multiplied by the
derating factor.
See Table 2 for derating factors for various analog integrated circuits
corresponding to different derating parameters.
7.7 Digital integrated circuit
The derating rules for digital integrated circuits are as follows:
a) The power voltage of bipolar digital circuit must be stable. The tolerance
range is: ± 5% or as required by relevant specifications;
b) The frequency of bipolar digital circuit is less than 90% of the rated value;
c) The output current 1 of bipolar digital circuit is less than 90% of the rated
1 Derating of output current will cause reducing of fan-out, which may lead to an increase in the number
of devices used, therefore, it reduces the expected reliability of the device. This shall be prevented when
......
 
Source: Above contents are excerpted from the PDF -- translated/reviewed by: www.chinesestandard.net / Wayne Zheng et al.