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GB/T 42907-2023: Test method for excess-charge-carrier recombination lifetime in silicon ingots, silicon bricks and silicon wafers - Noncontact eddy-current sensor
Status: Valid
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Test method for excess-charge-carrier recombination lifetime in silicon ingots, silicon bricks and silicon wafers - Noncontact eddy-current sensor
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GB/T 42907-2023
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PDF similar to GB/T 42907-2023
Basic data | Standard ID | GB/T 42907-2023 (GB/T42907-2023) | | Description (Translated English) | Test method for excess-charge-carrier recombination lifetime in silicon ingots, silicon bricks and silicon wafers - Noncontact eddy-current sensor | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040 | | Word Count Estimation | 18,153 | | Date of Issue | 2023-08-06 | | Date of Implementation | 2024-03-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 42907-2023: Test method for excess-charge-carrier recombination lifetime in silicon ingots, silicon bricks and silicon wafers - Noncontact eddy-current sensor
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 77.040
CCSH21
National Standards of People's Republic of China
Unbalanced loads in silicon ingots, blocks and wafers
Test of streamer recombination life
Non-contact eddy current sensing method
Published on 2023-08-06
2024-03-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration Committee
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents"
Drafting.
Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents.
This document is sponsored by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards
It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2).
This document was drafted by. TCL Zhonghuan New Energy Technology Co., Ltd., Hongyuan New Materials (Baotou) Co., Ltd., Longi Green Energy Technology
Co., Ltd., Yichang CSG Silicon Materials Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Inner Mongolia Zhonghuan Crystal Materials Co., Ltd.
Company, Sichuan Yongxiang Photovoltaic Technology Co., Ltd.
The main drafters of this document. Zhang Xuenan, Wang Lin, Wang Jianping, Li Xiangyu, Yang Yang, Deng Hao, Liu Wenming, Zhao Zilong, Guo Hongqiang, Zhang Shijing,
Pan Jinping, Li Shouqin, Zhao Jun.
Unbalanced loads in silicon ingots, blocks and wafers
Test of streamer recombination life
Non-contact eddy current sensing method
1 Scope
This document describes the non-contact eddy current induction method for testing non-equilibrium carrier complexes in monocrystalline silicon ingots, silicon blocks and silicon wafers for solar cells.
life-span method.
This document is applicable to non-equilibrium carrier recombination lifetimes between 0.1μs and 10000μs and resistivity between 0.1Ω·cm and 10000Ω·cm.
Testing of silicon ingots, silicon blocks and silicon wafers. Among them, the transient photoconductivity attenuation method is suitable for silicon when the non-equilibrium carrier recombination lifetime is less than 100 μs.
For testing of ingots, silicon blocks and silicon wafers, the quasi-steady state photoconductivity method is suitable for silicon ingots, silicon blocks and silicon wafers when the non-equilibrium carrier recombination lifetime is greater than.200 μs.
According to the test, when the non-equilibrium carrier recombination life is between 100μs and.200μs, both test methods are applicable.
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations
For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to
this document.
GB/T 1551 Determination of resistivity of silicon single crystal. direct current four-probe method and direct current two-probe method
GB/T 6618 Silicon wafer thickness and total thickness variation test method
GB/T 13389 Conversion procedures for resistivity and dopant concentration of boron-doped phosphorus-doped arsenic-doped silicon single crystal
GB/T 14264 Semiconductor material terminology
3 Terms and definitions
The terms and definitions defined in GB/T 14264 and the following apply to this document.
3.1
trap effecttrapeffect
When there are non-equilibrium carriers, the impurity energy level accumulates a certain kind of non-equilibrium carrier effect.
Note. For example, the phenomenon of deep energy levels formed by heavy metal impurities in the forbidden band of semiconductors, after capturing non-equilibrium carriers, and releasing them after a period of time is called a trap.
effect.
3.2
The average time interval from generation to recombination of non-equilibrium hole-electron pairs in a uniform semiconductor.
4 Method Principle
4.1 Transient photoconductivity attenuation method
The sample is placed at a fixed position 1mm~3mm away from the calibrated eddy current sensor, and a light source that changes over time is used to
The sample to be tested is irradiated. After the illumination suddenly stops, use the instrument calibration method to convert the data obtained from the eddy current sensor into photoconductivity, and then
Convert this to carrier concentration using the silicon mobility function. The functional relationship between carrier recombination lifetime and concentration can be analyzed by analyzing carrier concentration.
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