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GB/T 42902-2023: Test method for surface defects on silicon carbide epitaxial wafers - Laser scattering method
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Test method for surface defects on silicon carbide epitaxial wafers - Laser scattering method
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GB/T 42902-2023
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Basic data | Standard ID | GB/T 42902-2023 (GB/T42902-2023) | | Description (Translated English) | Test method for surface defects on silicon carbide epitaxial wafers - Laser scattering method | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040 | | Word Count Estimation | 14,193 | | Date of Issue | 2023-08-06 | | Date of Implementation | 2024-03-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 42902-2023: Test method for surface defects on silicon carbide epitaxial wafers - Laser scattering method
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 77.040
CCSH21
National Standards of People's Republic of China
Testing of surface defects of silicon carbide epitaxial wafers
Laser scattering
Published on 2023-08-06
2024-03-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration Committee
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents"
Drafting.
Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents.
This document is jointly developed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards
It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2).
This document was drafted by. Anhui Changfei Advanced Semiconductor Co., Ltd., Guangdong Tianyu Semiconductor Co., Ltd., Anhui Xinle Semiconductor
Co., Ltd., Nanjing Guosheng Electronics Co., Ltd., Zhejiang Xinke Semiconductor Co., Ltd., Hebei Puxing Electronic Technology Co., Ltd., China Science and Technology
College Semiconductor Research Institute.
The main drafters of this document. Niu Yingxi, Yuan Song, Zhang Huijuan, Liu Min, Qiu Guangyin, Li Jingbo, Peng Tiekun, Yuan Zhaogeng, Yang Long, and Yan Guoguo.
Testing of surface defects of silicon carbide epitaxial wafers
Laser scattering
1 Scope
This document describes the laser scattering method for testing surface defects on silicon carbide epitaxial wafers.
This document is suitable for surface defect testing of 4H-SiC epitaxial wafers.
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations
For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to
this document.
GB/T 14264 Semiconductor material terminology
GB/T 25915.1 Clean rooms and related controlled environments Part 1.Classification of air cleanliness levels according to particle concentration
3 Terms and definitions
The terms and definitions defined in GB/T 14264 and the following apply to this document.
3.1
falling particulate matter defectdownfaldefect
Before epitaxial growth or during the growth process, black amorphous carbon or SiC microparticles on the wall of the reaction growth chamber fall onto the substrate or epitaxial growth chamber.
On the surface of the layer, after epitaxial growth, some or all of them are deeply sunk into the epitaxial layer, forming point defects.
3.2
triangular defecttriangledefect
Surface defects on silicon carbide epitaxial wafers appear to be triangular in shape.
Note 1.The triangular defect is composed of the deformed 4H-SiC crystal boundary and the triangular area containing the 3C crystal interlayer. It is the step flow during the epitaxial growth process.
Caused by interference due to the presence of foreign particles, crystal defects or scratches on the substrate surface.
Note 2.The photoluminescence channel presents a triangular shape, while the surface channel presents one, two or three sides, and the third side is almost in line with the main reference side.
90°. Sometimes there is an obvious small triangular dent on the triangular head, which contains a 3C-SiC crystal layer. At this time, it is a shallow triangular defect.
3.3
carrotdefectcarrotdefect
Carrot-shaped surface defects on silicon carbide epitaxial wafers.
Note. Sometimes carrots have sharp edges and corners. These defects are arranged in parallel. As the thickness of the epitaxial layer increases, the carrot defects extend along the [1120] direction and are in line with the thickness of the epitaxial layer.
The direction of the main reference edge [1120] is parallel. The carrot defect length (L) tends to be the same and satisfies L=d/sinθ, where d is the thickness of the 4H-SiC epitaxial layer, θ
is the deflection angle of the substrate surface (θ=4°).
3.4
trapezoiddefecttrapezoiddefect
Surface defects on silicon carbide epitaxial wafers appear to be trapezoidal in appearance.
Note. The distance L between the upstream short embankment line and the downstream long giant step line increases as the thickness of the epitaxial layer increases, satisfying L=d/sinθ, where d is 4H-
The thickness of the SiC epitaxial layer, θ is the deflection angle of the substrate surface (θ = 4°).
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