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GB/T 41153-2021: Determination of boron, aluminum and nitrogen impurity content in silicon carbide single crystal - Secondary ion mass spectrometry
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Determination of boron, aluminum and nitrogen impurity content in silicon carbide single crystal - Secondary ion mass spectrometry
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GB/T 41153-2021
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Basic data | Standard ID | GB/T 41153-2021 (GB/T41153-2021) | | Description (Translated English) | Determination of boron, aluminum and nitrogen impurity content in silicon carbide single crystal - Secondary ion mass spectrometry | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H17 | | Word Count Estimation | 6,692 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 41153-2021: Determination of boron, aluminum and nitrogen impurity content in silicon carbide single crystal - Secondary ion mass spectrometry
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Determination of boron, aluminum and nitrogen impurity content in silicon carbide single crystal -- Secondary ion mass spectrometry
ICS 77:040
CCSH17
National Standards of People's Republic of China
Determination of boron, aluminum and nitrogen impurities in silicon carbide single crystal
Secondary ion mass spectrometry
Published on 2021-12-31
2022-07-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration
foreword
This document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules of Standardization Documents"
drafted:
Please note that some content of this document may be patented: The issuing agency of this document assumes no responsibility for identifying patents:
This document is jointly developed by the National Standardization Technical Committee for Semiconductor Equipment and Materials (SAC/TC203) and the National Standard for Semiconductor Equipment and Materials
The material sub-technical committee (SAC/TC203/SC2) of the Chemical Technology Committee jointly proposed and managed it:
This document is drafted by: China Electronics Technology Group Corporation Forty-sixth Research Institute, Nonferrous Metals Technology and Economic Research Institute Co:, Ltd:
Company, Shandong Tianyue Advanced Technology Co:, Ltd:
The main drafters of this document: Ma Nongnong, He Youqin, Chen Xiao, Liu Lina, He Xuankun, Li Suqing, Zhang Hongyan:
Determination of boron, aluminum and nitrogen impurities in silicon carbide single crystal
Secondary ion mass spectrometry
1 Scope
This document specifies the secondary ion mass spectrometry test method for the impurity content of boron, aluminum and nitrogen in silicon carbide single crystal:
This document is applicable to the quantitative analysis of boron, aluminum and nitrogen impurity content in silicon carbide single crystal:
The aluminum content is not less than 5×1013cm-3, the nitrogen content is not less than 5×1015cm-3, and the element concentration (atom number percentage) is not more than 1%:
Note 1: The content of the element to be measured in the silicon carbide single crystal is measured in the number of atoms per cubic centimeter:
Note 2: The determination of vanadium impurity content in silicon carbide single crystal can refer to this document, and the determination range is that the vanadium content is not less than 1 × 1013cm-3:
2 Normative references
The contents of the following documents constitute essential provisions of this document through normative references in the text: Among them, dated citations
documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to
this document:
GB/T 14264 Terms of Semiconductor Materials
GB/T 22461 Surface Chemical Analysis Vocabulary
GB/T 32267 Analytical Instrument Performance Determination Terms
3 Terms and Definitions
Terms and definitions defined in GB/T 14264, GB/T 22461 and GB/T 32267 apply to this document:
4 Principles
Under the condition of high vacuum (vacuum degree better than 5×10-7Pa), the primary ions generated by oxygen or cesium ion source are accelerated, purified and focused:
After bombarding the surface of the silicon carbide single crystal sample, a variety of particles were sputtered: The ions (ie secondary ions) are extracted, and the different
The ions of the mass-to-charge ratio were separated, and the ratio of the ion count rate of the element to be tested to the main element silicon in the sample was recorded and calculated: Using relative sensitivity factors
Quantitatively analyze and calculate the content of the analyte element in the silicon carbide single crystal:
5 Interfering factors
5:1 The secondary ion mass spectrometer has a memory effect: If a sample with a high content of the element to be tested has been tested, a high content will remain in the sample chamber of the instrument:
The element to be tested affects the test result of the content of the element to be tested:
5:2 Different models of instruments or different states of the same instrument (such as electron multiplier efficiency, aperture size, primary beam size, focus state
state, etc:), which will affect the detection limit of this method:
5:3 The vacuum level of the sample chamber will affect the accuracy of the nitrogen content test results:
5:4 The analyte ions adsorbed on the sample surface may affect the test results of its content:
5:5 The sample analysis surface within the window of the sample holder should be flat to ensure that when each sample moves to the analysis position, its surface and ion receiving
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