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GB/T 39159-2020 English PDF

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GB/T 39159-2020: High purity copper alloy target for integrated circuit
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PDF similar to GB/T 39159-2020


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Basic data

Standard ID GB/T 39159-2020 (GB/T39159-2020)
Description (Translated English) High purity copper alloy target for integrated circuit
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H62
Classification of International Standard 77.150.30
Word Count Estimation 11,183
Date of Issue 2020-11-19
Date of Implementation 2021-10-01
Regulation (derived from) National Standard Announcement No. 26 of 2020
Issuing agency(ies) State Administration for Market Regulation, China National Standardization Administration

GB/T 39159-2020: High purity copper alloy target for integrated circuit

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
(High purity copper alloy target for integrated circuit) ICS 77.150.30 H62 National Standards of People's Republic of China High purity copper alloy target for integrated circuit 2020-11-19 released 2021-10-01 implementation State Administration for Market Regulation Issued by the National Standardization Management Committee

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard was proposed by China Nonferrous Metals Industry Association. This standard is under the jurisdiction of the National Nonferrous Metals Standardization Technical Committee (SAC/TC243). Drafting organizations of this standard. Ningbo Jiangfeng Electronic Materials Co., Ltd., Youyan Yijin New Materials Co., Ltd., Ningbo Weitai Vacuum Technology Limited company. The main drafters of this standard. Cao Huanhuan, Yuan Haijun, Yao Lijun, Wang Xueze, Zeng Hao, Bian Yijun, Zhong Weihua, Zhou Youping, He Xin, Mu Erlong, Gao Yan, Jiang Weilong. High purity copper alloy target for integrated circuit

1 Scope

This standard specifies the classification, technical requirements, test methods, and inspection rules of high-purity copper alloy targets for integrated circuits (hereinafter referred to as targets) And signs, packaging, transportation, storage, quality certificate and purchase order (or contract) content. This standard applies to high-purity copper-aluminum (CuAl) alloy targets and high-purity copper-manganese (CuMn) alloy targets for integrated circuit manufacturing.

2 Normative references

The following documents are indispensable for the application of this document. For dated reference documents, only the dated version applies to this article Pieces. For undated references, the latest version (including all amendments) applies to this document. GB/T 8170 Numerical rounding rules and the expression and determination of limit values GB/T 8651 Ultrasonic plate wave flaw detection method for sheet metal GB/T 14265 General rules for analysis methods of hydrogen, oxygen, nitrogen, carbon and sulfur in metallic materials GB/T 36165 Determination of the average grain size of metals by electron backscatter diffraction (EBSD) method YS/T 347 Copper and copper alloy average grain size determination method YS/T 482 Copper and copper alloy analysis method photoelectric emission spectrometry YS/T 837 Sputtering target-backplane bonding quality ultrasonic inspection method YS/T 922 Chemical analysis method for high purity copper. Determination of trace impurity element content. Glow discharge mass spectrometry

3 Terms and definitions

The following terms and definitions apply to this document. 3.1 Target The cathode part in sputtering deposition technology. The cathode material is in the form of molecules, atoms or ions under the impact of positively charged cations. The formula is separated from the cathode and deposited on the anode surface. 3.2 Target blank The material used as the sputtering material on the cathode. 3.3 Backplane The material used to support or fix the target. Note. The target blank and the back plate can be connected by welding (such as brazing, electron beam welding, diffusion welding, etc.), mechanical compounding, and bonding. 3.4 Surface roughness Ra The processing surface has small spacing and small peak and valley unevenness. The average arithmetic deviation value Ra of the profile, that is, at a certain measurement length l Within the range, the average arithmetic deviation of the absolute value of the distance y from each point on the contour to the center line. Expressed by the formula.

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