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GB/T 43662-2024 English PDF

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GB/T 43662-2024: Patterned sapphire substrate
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PDF similar to GB/T 43662-2024


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Basic data

Standard ID GB/T 43662-2024 (GB/T43662-2024)
Description (Translated English) Patterned sapphire substrate
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H83
Classification of International Standard 29.045
Word Count Estimation 22,268
Date of Issue 2024-03-15
Date of Implementation 2024-10-01
Issuing agency(ies) State Administration for Market Regulation, China National Standardization Administration

GB/T 43662-2024: Patterned sapphire substrate

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 29.045 CCSH83 National Standards of People's Republic of China Sapphire patterned substrate Released on 2024-03-15 2024-10-01 Implementation State Administration for Market Regulation The National Standardization Administration issued

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents" Drafting. Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document was jointly issued by the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203) and the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203). It is jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemical Technical Committee (SAC/TC203/SC2). This document was drafted by. Guangdong Zhongtu Semiconductor Technology Co., Ltd., Nonferrous Metals Technology and Economic Research Institute Co., Ltd., Huacan Optoelectronics (Zhejiang) Co., Ltd., Huangshan Bolant Semiconductor Technology Co., Ltd., Peking University Dongguan Optoelectronics Research Institute, Yunnan Blue Crystal Technology Co., Ltd., Nanjing University of Science and Technology Yulong New Materials Technology Co., Ltd., Tongliao Seiko Sapphire Co., Ltd., Suzhou Hengjia Crystal Materials Co., Ltd. company. The main drafters of this document are. Zhang Neng, He Dongjiang, Zhang Xiaoqiong, Li Suqing, Xiao Guiming, Wang Zirong, Zhu Guangmin, Kang Kai, Liu Jianzhe, Ding Xiaomin, Wang Xinqiang, He Yongjie, Dai Shengya, Yan Dianjun, Xu Yongliang. Sapphire patterned substrate

1 Scope

This document specifies the technical requirements, test methods, inspection rules, marking, packaging, and other requirements for sapphire patterned substrates (hereinafter referred to as "substrates"). Packaging, transportation, storage, accompanying documents and order contents. This document is applicable to the research and development, production, testing, inspection and performance quality evaluation of sapphire patterned substrates.

2 Normative references

The contents of the following documents constitute the essential clauses of this document through normative references in this document. For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to This document. GB/T 2828.1-2012 Sampling procedures for inspection by attributes Part 1.Sampling for batch inspection based on acceptance quality limit (AQL) plan GB/T 8758 Infrared interferometry method for measuring the thickness of GaAs epitaxial layers GB/T 14140 Silicon wafer diameter measurement method GB/T 14264 Terminology of Semiconductor Materials GB/T 20307 General rules for scanning electron microscopy measurement of nanometer length GB/T 25915.1-2021 Clean rooms and related controlled environments Part 1.Classification of air cleanliness by particle concentration

3 Terms and definitions

The terms and definitions defined in GB/T 14264 and the following apply to this document. 3.1 Patterned substrate patternedsubstrate Through photolithography or embossing pattern mask process, and then plasma etching technology, the surface has a series of cone-like periodicity. A substrate with array-arranged micro-nano graphic structures. Note. Patterned substrates are used to improve the optoelectronic performance of GaN light-emitting diodes. 3.2 Pattern arrangement The substrate surface pattern is arrayed in position and direction according to the principle of closest packing. The 0° arrangement is shown in Figure 1, and the 90° arrangement is shown in Figure 2. Figure 1 0° arrangement