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GB/T 36705-2018: Test method for carrier concentration of gallium nitride substrates -- Raman spectrum method
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Test method for carrier concentration of gallium nitride substrates -- Raman spectrum method
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GB/T 36705-2018
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Basic data | Standard ID | GB/T 36705-2018 (GB/T36705-2018) | | Description (Translated English) | Test method for carrier concentration of gallium nitride substrates -- Raman spectrum method | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040 | | Word Count Estimation | 10,175 | | Date of Issue | 2018-09-17 | | Date of Implementation | 2019-06-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 36705-2018: Test method for carrier concentration of gallium nitride substrates -- Raman spectrum method
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Test method for carrier concentration of gallium nitride substrates - Raman spectrum method
ICS 77.040
H21
National Standards of People's Republic of China
Test of carrier concentration of gallium nitride substrate
Raman spectroscopy
Published on.2018-09-17
2019-06-01 implementation
State market supervision and administration
China National Standardization Administration issued
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards.
The Technical Subcommittee of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. Suzhou Institute of Nanotechnology and Nano-Bionics, Chinese Academy of Sciences, Suzhou Nawei Technology Co., Ltd., Zhongguancun
Wideband Forbidden Semiconductor Technology Innovation Alliance, Nonferrous Metals Technology and Economic Research Institute, Dongguan Zhongjia Semiconductor Technology Co., Ltd., China Electronics
Technical Standardization Institute.
The main drafters of this standard. Zheng Shunan, Zhang Yumin, Shi Lin, Qiu Yongxin, Wang Jianfeng, Xu Ke, Fu Xuetao, Yang Suxin, Ding Xiaomin, Lu Min,
Yang Jian.
Test of carrier concentration of gallium nitride substrate
Raman spectroscopy
1 Scope
This standard specifies a method for testing the carrier concentration of an N-type gallium nitride substrate by Raman spectroscopy.
This standard applies to the test of the carrier concentration of N-type gallium nitride substrate grown on sapphire, silicon carbide, silicon, gallium nitride materials.
Test range. 1 × 1017 cm -3 ~ 1 × 1020 cm -3.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article.
Pieces. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 4326 extrinsic semiconductor single crystal Hall mobility and Hall coefficient measurement method
GB/T 8170 Numerical Rounding Rules and Representation and Determination of Limit Values
GB/T 14264 semiconductor material terminology
3 Terms and definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4 method summary
At a certain temperature, the atoms in the material lattice are slightly vibrated near the equilibrium position (lattice vibration), and the energy of the lattice vibration is used.
Phonon representation. A certain concentration of carriers in the gallium nitride material interacts with the lattice vibration to form a coupling of longitudinal optical phonons and carriers.
LOphonon-plasmon coupled mode (LOPC), which can exhibit low frequency and high frequency in Raman spectroscopy
Characteristic peaks of lowerandupperfrequencybranches (often labeled LPP- and LPP). The peak position of the characteristic peak follows the current carrying
The sub-concentration changes and the carrier concentration can be calculated by the change of the peak position. The method can realize N-type nitridation by Raman spectroscopy
The micro-area test of the carrier concentration of the gallium substrate was measured and the diameter was 0.7 μm to 2 μm.
5 interference factors
5.1 Raman spectroscopy is commonly used to detect stress in thin film materials, so it is necessary to consider the effects of stress introduction during testing. Carrier concentration
At lower times (about < 3×1017 cm-3), the carrier concentration is calculated by the peak position of the polarized phonon mode A1 (LO), in order to eliminate the stress
The effect of the phonon mode A1 (LO) peak position can be used to calibrate the stress state of the sample by using the E2H peak position in the Raman spectrum of the gallium nitride material.
According to formula (1), the movement of the polarized phonon mode A1 (LO) peak position due to stress is derived.
ω'A=ωA-
0.8× ωE-568( )
2.9
(1)
In the formula.
ω'A---corrected A1 (LO) peak value in centimeters (cm-1);
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