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GB/T 32281-2015: Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock -- Secondary ion mass spectrometry
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| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 32281-2015 | English | 189 |
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Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock -- Secondary ion mass spectrometry
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GB/T 32281-2015
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Basic data | Standard ID | GB/T 32281-2015 (GB/T32281-2015) | | Description (Translated English) | Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock -- Secondary ion mass spectrometry | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H17 | | Classification of International Standard | 77.040.30 | | Word Count Estimation | 9,998 | | Date of Issue | 2015-12-10 | | Date of Implementation | 2017-01-01 | | Regulation (derived from) | National Standard Announcement 2015 No.38 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | GB/T 32281-2015: Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock -- Secondary ion mass spectrometry
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock - Secondary ion mass spectrometry
ICS 77.040.30
H17
National Standards of People's Republic of China
Solar grade silicon and silicon in the oxygen, carbon, boron and
Determination of phosphorus content by secondary ion mass spectrometry
Testmethodformeasuringoxygen, carbon, boronandphosphorusinsolar
2015-12-10 released
2017-01-01 Implementation
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
China National Standardization Management Committee released
Foreword
This standard is drafted in accordance with the rules given in GB/T 1.1-2009.
This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the national semiconductor equipment and materials standards
(SAC/TC203/SC2) jointly proposed and centralized.
The drafting of the standard units. Jiangsu Xie Xin silicon materials Technology Development Co., Ltd., Beijing can Sunshine New Energy Technology Co., Ltd.,
Summer energy group Co., Ltd., Ningxia Silver Star polysilicon limited liability company, Luoyang Hongtai Semiconductor Co., Ltd., the new special energy limited
the company.
The main drafters of this standard. Xue Kangmei, Xia Genping, Xiao Zongjie, Sheng Zhilin, Fan Zhanjun, Jiang Jianguo, Lin Qingxiang, Xu Ziliang, Wang Zelin,
Song Gaojie, Liu Guoxia.
Solar grade silicon and silicon in the oxygen, carbon, boron and
Determination of phosphorus content by secondary ion mass spectrometry
1 Scope
This standard specifies the secondary ion mass spectrometry (SIMS) method for the determination of oxygen, carbon, boron and phosphorus elements in solar grade silicon and silicon materials.
This standard applies to the detection of the element body content does not vary with the depth, and does not take into account the compensation of solar-grade single crystal or polysilicon or silicon
The oxygen content of oxygen, carbon, boron and phosphorus. The detection limit of each element body content is 0.2% (ie < 1 × 1020 atoms/cm3), detection
The lower limit is oxygen content ≥ 5 × 1016atoms/cm3, carbon content ≥ 1 × 1016 atoms/cm3, boron content ≥ 1 × 1014 atoms/cm3 and
Phosphorus content ≥ 2 × 1014 atoms/cm3. The determination of the four elements can be carried out using a SIMS instrument equipped with a cesium primary ion source
carry out.
2 normative reference documents
The following documents are indispensable for the application of this document. For dated references, only the dated edition applies to this article
Pieces. For undated references, the latest edition (including all modifications) applies to this document.
GB/T 2828.1 Sampling inspection procedures Part 1. Batch inspection sampling plan for retrieval by quality limit (AQL)
GB/T 14264 terminology for semiconductor materials
ASTME673 terminology for surface analysis (Terminologyrelatingtosurfaceanalysis)
3 terms and definitions
The terms and definitions defined in GB/T 14264 and ASTME673 apply to this document.
4 method summary
4.1 A polysilicon or silicon single crystal sample (one or more standard and test samples) with a flat analytical surface after mechanical polishing is loaded
Sample rack. The sample rack was baked in air at 100 ° C for 1 h and sent to the SIMS instrument.
4.2 The surface of the standard sample was bombarded with cesium (Cs) primary ion beam to analyze the negative ion spectra of 16O, 12C, 11B28Si and 31P,
Carbon, boron and phosphorus relative sensitivity factor (RSF).
4.3 To reduce the oxygen and carbon background content of the instrument, all the samples in the sample rack were pre-sputtered with cesium primary ion beam, and the secondary ion strength was not
analyze. The length of the pre-sputtering time depends on the instrument and the required oxygen and carbon background content.
4.4 with the cesium primary ion beam at two different sputtering rate bombardment of each sample the same measurement area, by reducing the beam grating area adjustment
Secondary sputtering rate.
4.5 In order to achieve optimum test capability, the two sputtering rates and the sputtering measurement time depend on the instrument used. Usually, the second one
The sputtering rate is at the maximum sputtering rate of the instrument and the first sputtering rate is less than one-half the second sputtering rate.
4.6 Negative secondary ions 16O, 12C, 11B28Si and 31P After mass spectrometer mass analysis, by electron multiplier (EM) or the same high sensitivity
Of the ion detector detection, the secondary ion counting strength is a function of time. The negative secondary ion count rate of silicon matrix elements (eg 28Si) is determined by
Faraday Cup (FC) or other suitable detectors. If multiple detectors are used during the test, the standard ion letter should be passed
(Counting rate of the same negative secondary ion, or the counting rate of two negative ions of known relative intensity, such as the usual 28Si/30Si)
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