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Test method for instrumental neutron activation analysis (INAA) of silicon
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GB/T 32277-2015
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Basic data | Standard ID | GB/T 32277-2015 (GB/T32277-2015) | | Description (Translated English) | Test method for instrumental neutron activation analysis (INAA) of silicon | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H17 | | Classification of International Standard | 77.040 | | Word Count Estimation | 19,191 | | Date of Issue | 2015-12-10 | | Date of Implementation | 2017-01-01 | | Regulation (derived from) | National Standard Announcement 2015 No.38 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China |
GB/T 32277-2015: Test method for instrumental neutron activation analysis (INAA) of silicon---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for instrumental neutron activation analysis (INAA) of silicon
ICS 77.040
H17
National Standards of People's Republic of China
Instrumental neutron activation analysis of silicon test methods
Issued on. 2015-12-10
2017-01-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards
Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. Leshan Electric Tianwei Silicon Technology Co., Ltd., China Institute of Atomic Energy, the new shares have a special energy
Limited.
The main drafters of this standard. Li Zhiwei Zhang Yadong, Zhang, Yao Shu, silver wave, Qiu Yanmei.
Introduction
Neutron activation analysis (NAA) is capable of a variety of materials of various elements of high sensitivity quantitative and qualitative analysis. special
Notably in the semiconductor industry, it is specified raw materials (for growing semiconductor grade monocrystalline silicon wafers and for analysis and evaluation of high-purity polysilicon
Material) trace element contamination. PV industry, the growth of the silicon raw material demand led to more large-scale polysilicon production and purification of various silicon atoms
Research and development of alternative materials. Produced by these methods of silicon material in the current literature generally referred to as solar grade silicon, and having a plurality
Shapes, such as a lump, powder and granular.
With the expansion of polysilicon and solar grade silicon production scale, quality control should also be strengthened, and instrumental neutron activation analysis (INAA) is
One alternative method. The method of instrumental neutron activation analysis is a direct implementation of the irradiated samples analyzed, compared with the traditional radiochemistry
Neutron activation analysis (RNAA) To irradiated sample chemical separation to remove interfering substances to be tested or concentrated radioactive isotopes
Su. Currently, some laboratories using different neutron source, irradiation conditions, electronic equipment and sample preparation methods, to achieve the instrumental neutron activation points
Analysis, and used in various forms, types of silicon samples. Instrumental neutron activation analysis of silicon standardized analytical methods will eliminate between
Difference, so as to establish a common reference method of analysis.
Instrumental neutron activation analysis of silicon test methods
1 Scope
1.1 standard specifies instrumental neutron activation analysis of silicon materials testing methods.
Instrumental neutron 1.2 This standard applies to chemical vapor deposition method or a method for purifying metallurgical silicon produced by activation analysis. Analysis of samples can be
Be monocrystalline, polycrystalline, and polycrystalline form may be a powder, a granule, or bulk silicon.
1.3 This standard applies to macroscopic material composition analysis. As an additional test method according to the sample preparation, and in sample extraction, transport
And preparation process to avoid surface contamination, but also realize the sample surface or near-surface area analysis.
1.4 Test method applies only to Appendix A thermal neutron or epithermal neutron activation analysis of trace elements listed.
1.5 test method does not apply to the amorphous silicon thin-film polycrystalline silicon thin film analysis, or microcrystalline silicon thin film. For by artificially high doping concentration Laid
Silicon sample special elements do not belong to the scope of this test method, but doping checked for safety, detection limits and the minimum waiting time tw0
After impact, the test method may also be applicable.
1.6 This test method is used to analyze a wide range of trace elements (see Appendix A). Generally, the irradiation time of the sample should be higher than 31Si decay lifetime
Long, and the like should be generated after irradiation 31Si fully decay analysis can be implemented.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 620-2011 Chemical reagent hydrofluoric acid (ISO 6353-3. 1987, NEQ)
GB/T 626-2006 Chemical Reagent nitrate (ISO 6353-2. 1983, NEQ)
GB/T 11446.1-2013 electronic grade water
GB/T 14264 semiconductor material terms
GB 18871 ionizing radiation protection and safety of radiation sources basic standards
GJB2253A-2008 nitrogen and liquid nitrogen application security guidelines
"Hazardous Chemicals mandatory national standards Implementation Manual"
ISO 11929.2010 ionizing radiation measurements characteristic limits (decision threshold, detection limit and the limit of the confidence interval) of the basic measurement
Principles and Applications [Determinationofthecharacteristiclimits (decisionthreshold, detectionlimitandlimitsof
theconfidenceinterval) formeasurementsofionizingradiation-Fundamentalsandapplication]
3 Terms, definitions, abbreviations
3.1 Terms and Definitions
GB/T 14264 and defined by the following terms and definitions apply to this document.
3.1.1
Environmental background ambientbackground
In addition to sample radiation generated by the radiation detector records.
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