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| GB/T 30860-2014 | English | 299 |
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Test methods for surface roughness and saw mark of silicon wafers for solar cells
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GB/T 30860-2014
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Basic data | Standard ID | GB/T 30860-2014 (GB/T30860-2014) | | Description (Translated English) | Test methods for surface roughness and saw mark of silicon wafers for solar cells | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040 | | Word Count Estimation | 13,138 | | Date of Issue | 7/24/2014 | | Date of Implementation | 4/1/2015 | | Quoted Standard | GB/T 1031; GB/T 3505; GB/T 10610; GB/T 14264; GB/T 18777; GB/T 26071; GB/Z 26958.1; GB/Z 26958.20; GB/Z 26958.22; GB/Z 26958.29; GB/Z 26958.31; GB/Z 26958.32; GB/Z 26958.40; GB/Z 26958.41; GB/Z 26958.49; GB/T 29055; GB/T 29505; GB/T 30859 | | Regulation (derived from) | National Standards Bulletin No. 19, 2014 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies a solar cell wafers (hereinafter referred to as wafer) surface roughness and cutting line marks the contact or non-contact contour test methods. This standard applies to cut through the line of processing technology monocrystalline |
GB/T 30860-2014: Test methods for surface roughness and saw mark of silicon wafers for solar cells ---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test methods for surface roughness and saw mark of silicon wafers for solar cells
ICS 77.040
H21
National Standards of People's Republic of China
Solar cell and wafer surface roughness
Mark the cutting line test method
Issued on. 2014-07-24
2015-04-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and materials Technical Committee (SAC/TC
203/SC2) jointly proposed and managed.
This standard was drafted. China Nonferrous Metals Industry Institute of Standards Metrology and Quality, Semi Leber Trading (Shanghai) Co., Ltd., Jiangsu Association
Xin Silicon Material Technology Development Co., Ltd. has semiconductor materials research, TBEA Xinjiang New Energy Co., Ltd., Luoyang
Tai Semiconductor Co., Ltd., Lianyungang Country silicon materials processing Product Quality Supervision and Inspection Center.
The main drafters of this standard. Xuzi Liang, Ren Hao, Chen Xun, Li Rui, Sun Yan, Xiong Jinjie, heart Yang Su, Jiang Jianguo, Wang Lihua, Xue against the United States,
Huang Li.
Solar cell and wafer surface roughness
Mark the cutting line test method
1 Scope
This standard specifies a solar cell wafers (hereinafter referred to as wafer) surface roughness and cutting line marks the contact or non-contact wheel
Profile test methods.
This standard applies to cut through the line of processing technology monocrystalline and polycrystalline silicon wafer. If you need to apply to other products, it would take all relevant
Parties agreed.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 1031 Geometrical product specifications (GPS) Surface texture Profile method Surface roughness parameters and their values
GB/T 3505 Geometrical product specifications (GPS) Surface texture Profile method - Terms, definitions and surface texture parameters
GB/T 10610 Geometrical product specifications (GPS) Surface texture Profile method - Rules and procedures for evaluation of the surface structure
GB/T 14264 semiconductor material terms
GB/T 18777 Geometrical product specifications (GPS) Surface texture Profile method - Metrological characteristics of phase correct filters
GB/T 26071 monocrystalline silicon solar cells with a cutting disc
GB /Z26958 (all parts) Geometrical product specifications (GPS) filter
GB/T 29055 multicrystalline silicon wafers for solar cells
GB/T 29505 flat surface of a silicon wafer surface roughness measurement method
GB/T 30859 solar cell wafer warpage and waviness testing methods
3 Terms and Definitions
GB/T 1031, GB/T 3505, GB/T 10610, GB/T 14264, GB/T 18777, GB/T 26071, GB/T 29055 and
GB /Z26958 defined terms and definitions apply to this document.
4 principle of the method
4.1 surface roughness
4.1.1 The surface roughness is generally believed that silicon wafer surface spatial wavelength of less than 0.5mm wafer surface changes measured using a variety of access
Probe contact or non-contact technology, the silicon surface of single or multiple roughest areas, or certain provisions of the area, along a certain sweep
Described scanning path to obtain a silicon surface contour, and further the roughness profile is extracted, the final calculation of the wafer surface roughness.
4.1.2 Characterization of wafer surface roughness parameters recommended arithmetical mean deviation of roughness profile Ra, maximum height of roughness profile Rz,
RMS roughness profile Rq, average width roughness profile unit Rsm. Other parameters may also be used, if necessary. More details
See GB/T 1031, GB/T 3505, GB/T 10610, GB/T 18777, GB/T 26071, GB/T 29505 and GB/T 30859.
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