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GB/T 30869-2014: Test method for thickness and total thickness variation of silicon wafers for solar cell
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| GB/T 30869-2014 | English | 189 |
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Test method for thickness and total thickness variation of silicon wafers for solar cell
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GB/T 30869-2014
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Basic data | Standard ID | GB/T 30869-2014 (GB/T30869-2014) | | Description (Translated English) | Test method for thickness and total thickness variation of silicon wafers for solar cell | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040 | | Word Count Estimation | 8,832 | | Date of Issue | 7/24/2014 | | Date of Implementation | 2/1/2015 | | Quoted Standard | GB/T 26071; GB/T 29055 | | Regulation (derived from) | National Standards Bulletin No. 19, 2014 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the discrete scanning and measuring solar cell wafers (hereinafter referred to as wafer) changes in thickness and total thickness. This standard applies to GB /T 26071, GB /T 29055 regulations Measurements of wafer thickness and to | GB/T 30869-2014: Test method for thickness and total thickness variation of silicon wafers for solar cell
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Test method for thickness and total thickness variation of silicon wafers for solar cell
ICS 77.040
H21
National Standards of People's Republic of China
Solar cell wafer thickness and total thickness variation
Test Methods
Issued on. 2014-07-24
2015-02-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and materials Technical Committee (SAC/TC
203/SC2) jointly proposed and managed.
This standard was drafted. Dongfang Electric Group, Emei Semiconductor Material Co., Ltd. has semiconductor materials research, Leshan new
Tianyuan Solar Technology Co., Ltd. Green Yang Electronic Materials.
The main drafters of this standard. Hezi Jun, Feng straightened, Cheng Yu, Li Yang, Chen Lin, Jingxu Hua, Zhuo.
Solar cell wafer thickness and total thickness variation
Test Methods
1 Scope
This standard specifies the discrete scanning and measuring solar cell wafers (hereinafter referred to as wafer) changes in thickness and total thickness.
This standard applies to GB T 26071 GB/T 29055 predetermined size to measure the thickness and total thickness variation of /, silicon, division
Measurement method is suitable for contact and non-contact measurement, scanning measurement method is only applicable to non-contact measurement. Measuring instruments permit
Under the circumstances, the present standard can also be used to measure the thickness and other specifications total wafer thickness variations.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 26071 monocrystalline silicon solar cells with a cutting disc
GB/T 29055 multicrystalline silicon wafers for solar cells
3 Method summary
3.1 discrete point measurement
On a silicon wafer and diagonal intersection diagonal from point symmetrical positions on both sides of four 15mm measuring wafer thickness (see Figure 1). Silicon wafer
Center point thickness as the nominal thickness of the silicon wafer. The difference between the total thickness of 5 thickness measurements of the maximum and minimum thicknesses of the wafer is called
Variety.
Figure 1 discrete point measurement point position measurement
3.2 Scanning measurement
Placed on a silicon chip platform, in the center of wafer thickness measurements, measuring the value of the nominal thickness of the silicon wafer, and then from a point of 1 to 7
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