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GB/T 30857-2014 English PDF

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GB/T 30857-2014: Standard test method for thickness and thickness variation on sapphire substrates
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Basic data

Standard ID GB/T 30857-2014 (GB/T30857-2014)
Description (Translated English) Standard test method for thickness and thickness variation on sapphire substrates
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H21
Classification of International Standard 77.040
Word Count Estimation 6,655
Date of Issue 7/24/2014
Date of Implementation 4/1/2015
Quoted Standard GB/T 14264
Regulation (derived from) National Standards Bulletin No. 19, 2014
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary This standard specifies the sapphire single crystal gallium nitride thin film wafer preparation and other uses cutting disc, standard test methods required limits abrasive sheet, polished (referred to as the substrate sheet) thickness and thickness variat

GB/T 30857-2014: Standard test method for thickness and thickness variation on sapphire substrates


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Standard test method for thickness and thickness variation on sapphire substrates ICS 77.040 H21 National Standards of People's Republic of China Changes in test methods sapphire substrate thickness and thickness Issued on. 2014-07-24 2015-04-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and materials Technical Committee (SAC/TC 203/SC2) jointly proposed and managed. This standard is mainly drafted by. GCL Optoelectronics Technology Holdings Limited, Shanghai Institute of Optics and Fine Mechanics, Zhejiang Yun Feng New Energy Technology Limited. The main drafters of this standard. Wei Mingde, Zhaohui, Liu Yifeng, Hang Yin, Xu Yongliang. Changes in test methods sapphire substrate thickness and thickness

1 Scope

This standard specifies the sapphire single crystal gallium nitride thin film wafer preparation and other uses cutting, grinding film, polished (referred to as substrate Sheet) thickness and thickness variation whether the standard test method to meet the required limits. This standard applies to the sapphire substrate thickness and thickness variation tests.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 14264 semiconductor material terms

3 Terms and Definitions

GB/T 14264 and defined by the following terms and definitions apply to this document. 3.1 5.00 thickness variation 5pointsthicknessvariation TV5 The difference between the substrate sheet thickness measurements given five points in the maximum and minimum thicknesses of the substrate sheet is called 5-point thickness variation.

4 Summary of Method

4.1 discrete point measurement In the center of the substrate sheet and the symmetrical positions from the four points on the circumference of the edge 2mm (see Fig. 1) measuring the thickness of the substrate sheet. As a center thickness The nominal thickness of the substrate sheet. The difference between the five thickness measurements the maximum thickness and the minimum thickness variation is 5.00 thickness of the substrate sheet. Explanation. 1,4,5 --- from the rounded edges 2mm; 2 --- center; 3 --- anomalies edge 2mm. Figure 1 discrete position

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