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US$314.00 · In stock Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 29557-2013: Surface chemical analysis -- Depth Profiling -- Measurement of sputtered depth Status: Valid
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Surface chemical analysis -- Depth Profiling -- Measurement of sputtered depth
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GB/T 29557-2013
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Basic data | Standard ID | GB/T 29557-2013 (GB/T29557-2013) | | Description (Translated English) | Surface chemical analysis -- Depth Profiling -- Measurement of sputtered depth | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | G04 | | Classification of International Standard | 71.040.40 | | Word Count Estimation | 16,190 | | Adopted Standard | ISO/TR 15969-2001.IDT | | Regulation (derived from) | National Standards Bulletin 2013 No. 10 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies: sputter sputter depth profiling measured depth criteria. This standard applies to divest some combination of ion bombardment of solid samples surface chemical analysis techniques, usually sputter depth of up to a few microns. |
GB/T 29557-2013: Surface chemical analysis -- Depth Profiling -- Measurement of sputtered depth---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Surface chemical analysis.Depth Profiling.Measurment of sputtered depth
ICS 71.040.40
G04
National Standards of People's Republic of China
Surface chemical analysis - Depth profiling
Sputter depth measurement
(ISO /T R15969.2001, IDT)
Issued on. 2013-07-19
2014-03-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
This standard uses the translation method identical with ISO /T R15969.2001 "Surface chemical analysis sputter depth profiling depth measurement."
This standard by the National Standardization Technical Committee microbeam (SAC/TC38) and focal points.
This standard is drafted by. Zhongshan University, Zhejiang University, Dalian Institute of Chemical Physics.
The main drafters of this standard. Chen, Zhang Xun students, Xiefang Yan, GONG force, Zhang Weihong, Sheng Shishan.
Introduction
This standard applies to the following three aspects.
a) When the detection signal intensity sputter time (or ion dose density) function to determine the depth ruler sputter profiling. When the unit
Sputter depth between the sputtering rate (usually nm/s units).
b) enhancement obtained with different instruments depth analysis of comparability of data, to improve the reliability of depth profiling and promoting its industry
application.
c) as the sputtering depth measurement basis for international standards development.
Surface chemical analysis - Depth profiling
Sputter depth measurement
1 Scope
This standard specifies the sputter depth profiling measuring the sputtering depth guidelines.
This standard applies to combined ion bombardment release surface portion of the solid sample chemical analysis techniques, often sputter depth of up to a few microns.
2 Terms and definitions
The following terms and definitions apply to this document.
Note. The term used in this standard basically followed the definition ASTME673-95c [1] of. To define and ISO /TC201/SC1 developed in the previous term
Cause, these definitions should be some changes, see reference [2] and [3].
2.1
Sputter depth sputtereddepth
Distance z (m) (the surface perpendicular to the sample surface and the sputtering surface of original sample analysis release a certain amount of material sputtered between
Straight), is defined as.
z = mA · ρ
(1)
Where.
--- Peeling the sample size m, in kilograms (kg);
A --- sputtering area, in square meters (m2);
p --- sample density in kilograms per cubic meter (kg/m3).
2.2
Crater depth craterdepth
The average distance from the original surface and produce a crater bottom region of the measured signal (perpendicular to the surface).
NOTE. Assume the incident ion implantation and residue caused in a direction perpendicular to the surface of the expansion of the sample ( "bump") can be neglected [5], the crater depth is equal to the sputtering depth.
If the analysis by measuring outdoor crater depth measured sputter depth, surface reactions (such as oxidation) will increase the crater bottom ridge, which is usually measured arc
Pit depth is less than the sputtering depth.
3 Abbreviations
Auger electron spectroscopy AES Augerelectronspectroscopy
Atomic force microscopy AFM Atomicforcemicroscopy
EDS Energydispersivespectrometry energy dispersive spectroscopy
EPMA Electronprobemicroanalysis electron probe microanalysis
Focused Ion Beam FIB Focusedionbeam
GIXR GrazingincidenceX-rayreflectivity grazing incidence X-ray reflectivity
MEIS Mediumenergyionscattering in energy ion scattering spectroscopy
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