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GB/T 6618-2009: Test method for thickness and total thickness variation of silicon slices
Status: Valid GB/T 6618: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 6618-2009 | English | 229 |
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3 days [Need to translate]
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Test method for thickness and total thickness variation of silicon slices
| Valid |
GB/T 6618-2009
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| GB/T 6618-1995 | English | 359 |
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3 days [Need to translate]
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Test method for thickness and total thickness variation of silicon slices
| Obsolete |
GB/T 6618-1995
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| GB 6618-1986 | English | 199 |
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2 days [Need to translate]
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Standard method for measuring thickness and total thickness variation of silicon slices
| Obsolete |
GB 6618-1986
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PDF similar to GB/T 6618-2009
Basic data | Standard ID | GB/T 6618-2009 (GB/T6618-2009) | | Description (Translated English) | Test method for thickness and total thickness variation of silicon slices | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 10,146 | | Date of Issue | 2009-10-30 | | Date of Implementation | 2010-06-01 | | Older Standard (superseded by this standard) | GB/T 6618-1995 | | Quoted Standard | GB/T 2828.1; GB/T 12964; GB/T 12965; GB/T 14139 | | Regulation (derived from) | National Standard Approval Announcement 2009 No.12 (Total No.152) | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the monocrystalline silicon cutting discs, grinding pieces, discrete methods of measurement and scanning polished and epitaxial wafers (referred to as silicon) thickness and total thickness variation. This standard applies to comply with GB/T 12964, measuring GB/T 14139 specified size and thickness of the wafer thickness variation of the total, GB/T 12965. In the test instrument allows, this standard can also be used to measure the thickness and other specifications of the total wafer thickness variations. | GB/T 6618-2009: Test method for thickness and total thickness variation of silicon slices---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for thickness and total thickness variation of silicon slices
ICS 29.045
H80
National Standards of People's Republic of China
Replacing GB/T 6618-1995
Changes in test methods wafer thickness and total thickness
Posted 2009-10-30
2010-06-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard replaces GB/T 6618-1995 "wafer thickness and total thickness variation of test methods."
This standard compared with GB/T 6618-1995, the main changes are as follows.
--- The scope extends to the wafer;
--- Chapter 4 adds confounding factors;
--- Increasing the size of 150mm and 200mm two specifications of the reference ring;
--- Up 7.2 instrument calibration content.
This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed.
This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material.
This standard was drafted. Semiconductor Materials Co., Ltd. in Beijing research.
The main drafters of this standard. Luli Yan, Sun Yan, Du.
This standard replaces the standards previously issued as follows.
--- GB 6618-1986, GB/T 6618-1995.
Changes in test methods wafer thickness and total thickness
1 Scope
This standard specifies the silicon single crystal cutting, abrasive sheet, polished and epitaxial wafers (wafer short) changes in thickness and the total thickness of the discrete and sweep
Described measuring method.
This standard applies to GB/T 12964, GB/T 12965, wafer thickness GB/T 14139 stipulated size and total thickness variation
Of measurement. In the test instrument allows, this standard can also be used to measure the thickness and other specifications of the total thickness of the wafer changes.
2 Normative references
The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent
Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan
(GB/T 2828.1-2003, ISO 2859-1.1999, IDT)
GB/T 12964 monocrystalline silicon polished wafer
GB/T 12965 monocrystalline silicon cutting discs and grinding sheet
GB/T 14139 silicon wafer
3 Methods Summary
3.1 discrete point measurement
Measuring the thickness of silicon wafers from the center and edge of the wafer 6mm 4 positions symmetrical points on the circumference. Which is located two wafers
The angle between the main reference plane perpendicular bisector counterclockwise to a diameter of 30 °, two other points are located on the diameter perpendicular to the diameter of the other
(See FIG. 1). Wafer center point thickness as the nominal thickness of the silicon wafer. The difference between the five thickness measurements of the maximum and minimum thicknesses of said
The change in total thickness for the silicon wafer.
Figure 1 measurement point position when the discrete point measurement
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