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GB/T 6617-2009: Test method for measuring resistivity of silicon wafer using spreading resistance probe
Status: Valid GB/T 6617: Evolution and historical versions
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
| GB/T 6617-2009 | English | 189 |
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Test method for measuring resistivity of silicon wafer using spreading resistance probe
| Valid |
GB/T 6617-2009
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| GB/T 6617-1995 | English | 319 |
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Test method for measuring resistivity of silicon wafers using spreading resistance probe
| Obsolete |
GB/T 6617-1995
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| GB 6617-1986 | English | 199 |
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Standard method for measuring resistivity of silicon wafers using spreading resistance probe
| Obsolete |
GB 6617-1986
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PDF similar to GB/T 6617-2009
Basic data | Standard ID | GB/T 6617-2009 (GB/T6617-2009) | | Description (Translated English) | Test method for measuring resistivity of silicon wafer using spreading resistance probe | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 8,867 | | Date of Issue | 2009-10-30 | | Date of Implementation | 2010-06-01 | | Older Standard (superseded by this standard) | GB/T 6617-1995 | | Quoted Standard | GB/T 1550; GB/T 1552; GB/T 1555; GB/T 14847 | | Regulation (derived from) | National Standard Approval Announcement 2009 No.12 (Total No.152) | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the method of spreading resistance probe measurements of resistivity silicon. This standard applies to the measurement of the crystal grain known conductivity type silicon substrate resistivity and measurements of the same type or inversion resistivity silicon epitaxial layer, measuring range: 10^(-3) �� �� cm ~ 10^2�� �� cm. | GB/T 6617-2009: Test method for measuring resistivity of silicon wafer using spreading resistance probe
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Test method for measuring resistivity of silicon wafer using spreading resistance probe
ICS 29.045
H80
National Standards of People's Republic of China
Replacing GB/T 6617-1995
Measuring resistivity silicon spreading resistance probe
Posted 2009-10-30
2010-06-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Foreword
This standard replaces GB/T 6617-1995 "measuring resistivity silicon spreading resistance probe."
This standard compared with GB/T 6617-1995, the main changes are as follows.
--- Deleting reference standard silicon epitaxial layer and the diffusion layer thickness measurement Bevelers staining;
--- Principle of the method of deleting single probe and three-probe schematic and increases the spreading resistance principle equations (1) and its three assumptions;
--- Increased disturbances;
--- Environmental measuring instruments and measuring instrument automatically increases the range and accuracy;
--- The original measurement program overhaul;
--- Deleting measurements to calculate.
This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed.
This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material.
This standard was drafted. Nanjing Guosheng Electronics Co., Ltd., Ningbo Lili Electronics Co., Ltd.
The main drafters of this standard. Marin Bao, Luo Hong, Liupei Dong, Tan Weidong, Lv Liping and so on.
This standard replaces the standard for the previous editions.
--- GB 6617-1986, GB/T 6617-1995.
Measuring resistivity silicon spreading resistance probe
1 Scope
This standard specifies the method for measuring the spreading resistance probe resistivity silicon.
This standard applies to the measurement crystal to crystal and known conductivity type silicon substrate resistivity and the same type of measurement or reverse type silicon epitaxial layer
Resistivity measurement range. 10-3Ω · cm ~ 102Ω · cm.
2 Normative references
The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent
Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research
Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard.
GB/T 1550 extrinsic conductivity type semiconductor material testing methods
GB/T 1552 silicon germanium crystal measuring resistivity inline four-probe method
GB/T 1555 to the measurement method of a semiconductor single crystal
GB/T 14847 lightly doped silicon epitaxial layer on the substrate thickness infrared reflectance measurements heavily doped
3 PRINCIPLE OF THE METHOD
Spreading resistance method is an experimental comparison. The first method is to measure the spreading resistance is formed through repetition of the contact point, then a calibration curve
Determining the resistivity of the test sample in the vicinity of the contact point of the probe. Spreading resistance R between the conductive metal probe and a reference point of silicon
Potential drop and the ratio of the current flowing through the probe.
For uniform resistivity semiconductor material, the semiconductor material in contact with the probe radius Rao spreading resistance of the formula (1)
She said.
Rs = ρ2 Rao
(1)
Where.
ρ --- resistivity in ohms centimeters (Ω · cm);
Rao --- contact radius, in centimeters (cm);
Rs --- spreading resistance in ohms (Ω).
Equation holds shall meet the following three assumptions.
a) the distance between the two probes must be greater than 10-fold Rao;
b) the resistivity of the sample required uniform;
c) can not form a surface protective film or in contact with the barrier.
May be constant voltage method, a constant current method and logarithmic comparator method, the circuit diagram are shown in Figure 1, Figure 2, Figure 3, the specific formula, respectively, see formula
(2), (3) and (4).
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