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Std ID |
Description (Standard Title) |
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SJ 50033/71-1995
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Semiconductor discrete device Detail specification for type PIN342 series for PIN diode
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SJ 50033/72-1995
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Semiconductor discrete device. Detail specification for type PIN323 series for PIN diode
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SJ 50033/97-1995
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Semiconductor discrete device. Detail specification for type 2CJ4011, 2CJ4012, 2CJ4021 and 2CJ4022 step recovery diodes
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SJ 50033/98-1995
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Semiconductor discrete device. Detail specification for type 2CJ4211 and 2CJ4212 step recovery diodes
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SJ 50033.55-1994
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Semiconductor discrete device. Detail specification for type 2CK82 silicon switching diode
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SJ 50033.56-1994
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Semiconductor discrete device. Detail specification for type 2CK85 silicon switching diode
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SJ 50033/22-1994
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Semiconductor discrete device. Detail specification for silicon tuning varactor diode for type 2CC51E
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SJ 50033/25-1994
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Semiconductor discrete device. Detail specification for type 2CW1001~2CW1005 silicon voltage - Regulator diode
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SJ 50033/26-1994
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Semiconductor discrete device. Detail specification for type 2CW1006~2CW1015 silicon voltage - Regulator diode
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SJ 50033/27-1994
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Semiconductor discrete device. Detail specification for GaAs varactor diodes for 2EC600 series
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SJ 50033/28-1994
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Semiconductor discrete device. Detail specification stripline mixer diodes for 2CV334, 2CV3338
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SJ 50033/29-1994
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Semiconductor discrete device. Detail specification for GaAs high-speed switching assembly for type EK20
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SJ 50033/41-1994
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Detail specification for type GR9414 semiconductor infrared light eitting diode
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SJ 50033/4-1994
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Semiconductor discrete device. Detail specification for semiconductor red light emitting diodes for type GF 111 of GP and GT classes
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SJ 50033/5-1994
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Semiconductor discrete device. Detail specification for semiconductor yellow light emmitting diodes for type GF311 of GP and GT classes
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SJ 50033/6-1994
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Semiconductor discrete device. Detail specification for semiconductor light green emitting diodes for type GF 411 of GP and GT classes
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SJ 20349-1993
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methods of measurement for front end of receiver of airborne fire control radar
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SJ 20350-1993
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General performance requirements and methods of measurement for servo system of airborne fir control radar
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SJ 20068-1992
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Semiconductor discrete device. Detail specification for lower noise for silicon voltage reference diode for type 2DW14~18
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SJ 20069-1992
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Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK76
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SJ 20070-1992
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Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK105
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SJ 20071-1992
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Semiconductor discrete device. Detail specification for silicon switching diode for type 2CK4148
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SJ 20185-1992
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Semiconductor discrete device Detail specification for siscon voltage reference diodes for type 2DW232~236
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SJ 20186-1992
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Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CW2970~3015
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SJ 20188-1992
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Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550 through 2CZ5554
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SJ/T 10061-1991
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Detail specification for electronic components. Silicon schottky barrier mixer diodes for types 2CV3A, 2CV3B and 2CV3G
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SJ/T 10062-1991
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Detail specification for electronic components. Microstric silicon switching PIN diodes for types PIN 40A, PIN40B and PIN40C
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SJ/T 10063-1991
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Detail specification for electronic components. Silicon switching PIN diodes for types PIN 62A, PIN62B PIN62C and PIN62D
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SJ/T 10064-1991
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Detail specification for electronic. component PN silicon unijunction transistors for type BT 32
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SJ/T 10065-1991
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Detail specification for electronic components. PN silicon unijunction transistors for type BT 33
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SJ/T 10066-1991
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Detail specification for electronic component. PN silicon unijunction transistors for type BT 37
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SJ 3124-1988
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Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification, Type 3DD1942
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SJ 3125-1988
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Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification, Type 3DD2027
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SJ 3126-1988
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Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification, Type 3DD869
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SJ 3127-1988
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Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification, Type 3DD871
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SJ 3128-1988
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Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification, Type 3DD820
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SJ 2747-1987
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Blank detail specification for step-function recovery diodes
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SJ 2749-1987
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Method of measurement for semiconductor laser diodes
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SJ 2137-1982
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General procedures of measurement for silicon current-regulator diodes
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SJ 2138-1982
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Methods of measurement for regulated current of silicon current regulator diodes
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SJ 2139-1982
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Methods of measurement for dynamic impedance of silicon current regulator diodes
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SJ 2140-1982
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Methods of measurement for limiting voltage of silicon current regulator diodes
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SJ 2141-1982
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Methods of measurement for breakdown voltage of silicon currenet regulator diodes
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SJ 2142-1982
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Methods of measurement for current temperature coefficient of silicon current regulator diodes
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SJ 1804-1981
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Detail specification for silicon tuning variable capacitance diodes, Type 2CC101~104, 2CC201~204, 2CC301~304, 2CC401~404
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SJ 1805-1981
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Detail specification for silicon frequency modulated variable capacitance diodes, Type 2CC126
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SJ 1806-1981
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Detail specification for silicon band switching varialbe capacitance diodes, Type 2CC110, 2CC210, 2CC310, 2CC410, 2CC130
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SJ 1807-1981
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Detail specification for silicon tuning variable capacitance diodes, for Type 2CC120, 2CC122 and 2CC124; 2CC220, 2CC222 and 2CC224; 2CC320, 2CC322, 2CC324; 2CC420, 2CC422 and 2CC424
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SJ 1946-1981
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Detail specification for silicon voltage booster diodes, Type 2CN4C, 2DN4C, 2CN5C and 2DN5C
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SJ 1381-1978
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Structure and technology of test diode
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SJ 1225-1977
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Detail specification for germanium detector diodes, Type 2AP11~2AP17
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SJ 1226-1977
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Detail specification for germanium detector diodes, Type 2AP9~2AP10
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SJ 1227-1977
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Detail specification for germanium detector diodes, Type 2AP1~2AP8, 2AP21 and 2AP27
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SJ 1228-1977
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Detail specification for germanium wideband detector diodes, Type 2AP30~2AP31
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SJ 1229-1977
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Detail specification for germanium switching diodes, Type 2AK1~20
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SJ 1230-1977
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Methods of measurement for high frequency rectified current of germanium detector diodes
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SJ 966-1975
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Methods of measurement for reverse breakdown voltage of silicon switching diodes
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SJ 909-1974
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Detail specification for silicon voltage regulator diodes, Type 2CW50~149
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SJ 910-1974
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Detail specification for silicon voltage regulator diodes, Type 3DW50~202
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SJ 911-1974
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Detail specification for silicon planar temperature compensation voltage regulator diodes, Type 2DW230~236
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SJ 50033/177-2018
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(Semiconductor discrete devices 3CG2604, 3CG2604UB silicon PNP high frequency small power transistor detailed specifications)
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SJ 50033/178-2018
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(Semiconductor discrete devices 3CG2605, 3CG2605UB silicon PNP high frequency small power transistor detailed specifications)
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SJ 50033/179-2018
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(Semiconductor discrete devices 3CK2904, 3CK2905 silicon PNP high frequency small power switching transistors detailed specifications)
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SJ 50033/180-2018
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(Semiconductor discrete devices 3CK2906, 3CK2906UA, 3CK2906UB silicon PNP high frequency small power switching transistors detailed specifications)
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SJ 50033/181-2018
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(Semiconductor discrete devices 3CK2907, 3CK2907UA, 3CK2907UB silicon PNP high frequency small power switching transistors detailed specifications)
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SJ 50033/182-2018
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(Semiconductor discrete devices 3CK3250, 3CK3250UB silicon PNP high frequency low power switching transistors detailed specifications)
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SJ 50033/183-2018
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(Semiconductor discrete devices 3CK3251, 3CK3251UB silicon PNP high frequency small power switching transistors detailed specifications)
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SJ 50033/184-2018
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(Semiconductor discrete devices 3CK4033, 3CK4033UA, 3CK4033UB silicon PNP high frequency small power switching transistors detailed specifications)
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SJ 50033/185-2018
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(Semiconductor discrete devices 3CK5415, 3CK5415U8, 3CK5415UA type silicon PNP high frequency small power switching transistors detailed specifications)
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SJ 50033/186-2018
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(Semiconductor discrete devices 3DK2222, 3DK2222UA, 3DK2222UB silicon NPN high frequency small power switching transistors detailed specifications)
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SJ 50033/187-2018
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(Semiconductor discrete devices 3CA3741, 3CA3741U1 silicon PNP high-frequency high-power switching transistors detailed specifications)
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SJ 50033/188-2018
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(Semiconductor discrete devices 3CA4931, 3CA4931U8 silicon PNP high frequency high power transistor detailed specifications)
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SJ 50033/189-2018
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(Semiconductor discrete devices 3CK3634, 3CK3634UB silicon PNP high-frequency high-power switching transistors detailed specifications)
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SJ 50033/190-2018
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(Semiconductor discrete devices 3CK3635, 3CK3635UB silicon PNP high-frequency high-power switching transistors detailed specifications)
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SJ 50033/191-2018
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(Semiconductor discrete devices 3CK3637, 3CK3637UB silicon PNP high-frequency high-power switching transistors detailed specifications)
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SJ 50033/192-2018
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(Semiconductor discrete devices 3CK3762, 3CK3762U8, 3CK3762UA type silicon PNP high-frequency high-power switching transistors detailed specifications)
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SJ 50033/193-2018
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(Semiconductor discrete devices 3CK3763, 3CK3763U8, 3CK3763UA type silicon PNP high-frequency high-power switching transistors detailed specifications)
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SJ 50033/194-2018
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(Semiconductor discrete devices 3CK5153, 3CK5153U3 silicon PNP high-frequency high-power switching transistors detailed specifications)
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SJ 50033/195-2018
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(Semiconductor discrete device 3DA5665 silicon NPN high frequency high power switching transistor detailed specifications)
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SJ 50033/196-2018
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(Semiconductor discrete devices 3DK5154, 3DK5154U3 silicon NPN high-frequency high-power switching transistors detailed specifications)
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SJ/T 11586-2016
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10keV X-ray total dose radiation testing method of semiconductor devices
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SJ 50033/154-2002
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Semiconductor discrete devices. Detail specification for type 3DG251 silicon UHF low-noise transistor
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SJ 50033/155-2002
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Semiconductor discrete devices. Detail specification for type 3DG252 sillcon microwave linearity transistor
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SJ 50033/156-2002
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Semiconductor discrete devices. Detail specification for type 3DA505 silicon microwave pulse power transistor
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SJ 50033/157-2002
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Semiconductor discrete devices. Detail specification for type 3DA506 silicon microwave pulse power transistor
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SJ 50033/158-2002
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Semiconductor discrete devices. Detail specification for type 3DG44 silicon UHF low-noise transistor
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SJ 50033/159-2002
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Semiconductor discrete devices. Detail specification for type 3DG142 silicon UHF low-noise transistor
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SJ 50033/160-2002
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Semiconductor discrete devices. Detail specification for type 3DG122 silicon UHF low-power transistor
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SJ 20756-1999
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Guideline for application of structurally similarity of discrete semiconductor devices
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SJ 20642.2-1998
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Semiconductor opto-electronic module Detail specification for type GD82 PIN-FET opto-receiver module
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SJ 20642.3-1998
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Semiconductor opto-electronic module Detail specification for type GD83 PIN-FET opto-receiver module
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SJ 20642.6-1998
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Semiconductor opto-electronic module Detail specification for type GH83 opto-couplers
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SJ/T 10696-1996
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Semiconductor discrete device Detail specification for type QL50 in use for automotive nine diodes bridge rectifying modules
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SJ/T 11089-1996
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Letter symbols for discrete semiconductor components
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SJ 20527.1-1995
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Microwave assembly. Detail specification for model WFH362 double balanced mixer
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SJ/Z 9168-1995
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Generic specifications for determination of discrete semiconductor devices used for VCR
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SJ 50033/3-1994
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Semiconductor discrete device. Detail specification for semiconductor opto-couplers for type GH21, GH22 and GH23 of GP, GT and GCT classes
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SJ 50033/35-1994
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Detail specification for type GH30 semiconductor high speed optocoupler
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SJ 50922/1-1994
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Detail specification for type TM5187F pulse modulator tube
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SJ/T 10585-1994
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Semiconductor discrete device Dimensions of outline and lead-frame for the surface mounting device
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