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SJ/T 11586-2016

Search Result of Chinese Standard: 'SJ/T 11586-2016'
Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusRelated Standard
SJ/T 11586-2016English279 Add to Cart Days<=3 (The semiconductor device 10keV low-energy X-ray test method for total dose radiation) Valid SJ/T 11586-2016
SJ/T 11586-2016Chinese18 Add to Cart <=1-day [PDF from Chinese Authority, or Standard Committee, or Publishing House]

   
Detail Information of SJ/T 11586-2016; SJ/T11586-2016
Description (Translated English): (The semiconductor device 10keV low-energy X-ray test method for total dose radiation)
Sector / Industry: Electronics Industry Standard (Recommended)
Classification of Chinese Standard: L40
Word Count Estimation: 12,142
Date of Issue: 2016-01-15
Date of Implementation: 2016-06-01
Regulation (derived from): ?Ministry of Industry and Information Technology Bulletin 2016 No.3
Summary: This standard specifies methods and procedures for conducting ionizing radiation effects tests on semiconductor devices and circuits using X-ray radiometers (average photon energy of about 10 keV, maximum photon energy not exceeding 100 keV). A total dose ionizing radiation evaluation test suitable for semiconductor devices.


Related standard:   SJ/T 11587-2016
   
 
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