SJ 20789-2000 English PDF

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SJ 20789-2000: Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor

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SJ 20789-2000	179	Add to Cart	2 days	Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor

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SJ/T 11141   SJ/T 11281   GB/T 18910.2   SJ/T 9014.8.2   

Basic data

Standard ID: SJ 20789-2000 (SJ20789-2000)
Description (Translated English): Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor
Sector / Industry: Electronics Industry Standard
Classification of Chinese Standard: L44
Word Count Estimation: 5,523
Date of Issue: 2000-10-20
Date of Implementation: 2000-10-20
Summary: This standard specifies the MOS field-effect transistor thermal parameters to the rapid screening test methods. This standard applies to MOS field effect transistor (hereinafter referred to as resistors) thermal parameters of rapid screening.

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