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Std ID |
Description (Standard Title) |
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SJ 2103-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS46
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SJ 2104-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS47
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SJ 2105-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS48
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SJ 2106-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS49
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SJ 2107-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS50
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SJ 2108-1982
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Detail specification for N channel junction field-effect low power switching transistors, Type CS51
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SJ 1974-1981
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Detail specification for low frequency field-effect transistors, Type CS1
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SJ 1975-1981
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Detail specification for low frequency field-effect transistors, Type CS2
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SJ 1976-1981
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Detail specification for low frequency field-effect transistors, Type CS3
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SJ 1977-1981
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Detail specification for high frequency field-effect transistors, Type CS4
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SJ 1978-1981
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Detail specification for high frequency field-effect transistors, Type CS5
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SJ 1979-1981
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Detail specification for high frequency field-effect transistors, Type CS6
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SJ 1980-1981
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Detail specification for high frequency field-effect transistors, Type CS7
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SJ 1981-1981
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Detail specification for high frequency field-effect transistors, Type CS8
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SJ 1982-1981
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Detail specification for high frequency field-effect transistors, Type CS9
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SJ 1983-1981
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Detail specification for low frequency low noise field-effect transistors, Type CS10
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SJ 1984-1981
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Detail specification for low frequency low noise field-effect transistors, Type CS11
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SJ 1985-1981
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Detail specification for low frequency low noise field-effect transistors, Type CS12
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SJ 1986-1981
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Detail specification for low frequency low noise field-effect transistors, Type CS13
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SJ 1987-1981
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Detail specification for low frequency low noise field-effect transistors, Type CS14
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SJ 1988-1981
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Detail specification for low frequency low noise field-effect transistors, Type CS15
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SJ 1989-1981
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Detail specification for Nchannel junction pair field-effect transistors, Type CS19
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SJ 1990-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS20
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SJ 1991-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS21
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SJ 1992-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS22
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SJ 1993-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS23
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SJ 1994-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS24
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SJ 1995-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS25
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SJ 1996-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS26
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SJ 1997-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS27
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SJ 1998-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS28
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SJ 1999-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS29
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SJ 2000-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS30
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SJ 2001-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS31
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SJ 2002-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS32
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SJ 2003-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS33
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SJ 2004-1981
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Detail specification for N channel junction pair field-effect transistors, Type CS34
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SJ 20787-2000
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Measurment method for thermal resistance of semiconductor bridge rectifieres
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SJ/T 10779-1996
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Detailed specifications for electronic components - 2CN41 silicon fast-switching rectifier diodes - Assessment level E (Applicable for certification)
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SJ/T 10892-1996
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Silicon switching rectifier diode for type 2CN31D
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SJ/T 10949-1996
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Detailed specifications for electronic components - 2CZ321 ambient-rated silicon rectifier diodes (Applicable for certification)
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SJ/T 10950-1996
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Detailed specifications for electronic components - 2CZ322 ambient-rated silicon rectifier diodes (Applicable for certification)
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SJ/T 10951-1996
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Detailed specifications for electronic components - 2CZ33 ambient-rated silicon rectifier diodes (Applicable for certification)
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SJ/T 10952-1996
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Detailed specifications for electronic components - 2CZ323 ambient-rated silicon rectifier diodes (Applicable for certification)
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SJ/T 10953-1996
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Detailed specifications for electronic components - 2CZ324Q ambient-rated silicon rectifier diodes (Applicable for certification)
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SJ/T 10958-1996
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Detailed specifications for electronic components - 3CT320 case-rated reverse blocking triode thyristors (Applicable for certification)
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SJ/T 10959-1996
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Detailed specifications for electronic components - 3CT320 case-rated avalanche triode thyristors (Applicable for certification)
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SJ/T 10967-1996
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Detailed specifications for electronic components - 3DD203 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)
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SJ/T 10976-1996
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Detailed specifications for electronic components - QL62 silicon single phase bridge rectifiers (Applicable for certification)
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SJ 50033/73-1995
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Semiconductor discrete device. Detail specification for type QL74 silicon single phase bridge rectifier
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SJ/Z 9169-1995
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Specifications for determination of 2CZ185 type (MA185-TA5) low-power rectifier diodes and similar products used for VCR
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SJ 50033.43-1994
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Semiconductor discrete device. Detail specification for type 2CZ104 silicon switching rectifier diode
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SJ 50033.44-1994
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Semiconductor discrete device. Detail specification for type 2CZ105 silicon witching rectifier diode
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SJ 50033.45-1994
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Semiconductor discrete device. Detail specification for type 2CZ58 silicon rectifier diode
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SJ 50033.46-1994
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Semiconductor discrete device. Detail specification for type 2CZ59 silicon rectifier diode
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SJ 50033.47-1994
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Semiconductor discrete device. Detail specification for type 2CZ117 silicon rectifier diode
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SJ 50033.50-1994
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Semiconductor discrete device. Detail specification for type QL73 silicon three phase full wave bridge rectifier
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SJ 50033/18-1994
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Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ73
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SJ 50033/19-1994
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Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ74
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SJ 50033/20-1994
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Semiconductor discrete device. Detail specification for silicon rectifier diode for type 2CZ101
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SJ 50033/21-1994
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Semiconductor discrete device. Detail specification for silicon swicth-rectifier diode for type 2CZ75
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SJ 50033/39-1994
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Semiconductor discrete device. Detail specification for type 2CZ106 silicon switching rectifier diode
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SJ 20064-1992
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Semiconductor discrete device. Detail specification for type QL71 Silicon single phase full wave bridge rectifier
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SJ 20065-1992
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Semiconductor discrete device. Detail specification for type QL72 silicon three phase full wave bridge rectifier
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SJ 20066-1992
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Semiconductor discrete device. Detail specification for type 2CL3 silicon high voltage rectifier stack
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SJ 20067-1992
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Semiconductor discrete device. Detail specification for type 2CZ30 silicon rectifier diode
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SJ 20187-1992
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Semiconductor discrete device Detail specification for silicon voltage regulator diodes for types 2CZ5550~5554
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SJ/T 10054-1991
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Detail specification for electronic components. Case rated silicon rectifier diode for Type 2CZ57
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SJ/T 10055-1991
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Detail specification for electronic components. Case rated silicon rectifier diode, Type 2CZ58
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SJ/T 10056-1991
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Detail specification for electronic components. Case rated silicon rectifier diode, Type 2CZ59
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SJ/T 10057-1991
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Detail specification for electronic component. Case rated silicon rectifier diode, Type 2CZ60
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SJ/T 10058-1991
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Detail specification for electronic components. Ambient rated silicon rectifier diode, Type 2CZ103
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SJ/T 10059-1991
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Detail specification for electronic components. Ambient rated silicon rectifier diode, Type 2CZ116
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SJ/T 10060-1991
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Detail specification for electronic components. Ambient rated silicon rectifier diode, Type 2CZ117
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SJ/Z 9014.3-1987
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Semiconductor components - Discrete components and integrated circuits Part 6 Thyristors
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SJ 2717-1986
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Detail specification for silicon general purpose rectifier diodes, Type 2CZ301
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SJ 2718-1986
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Detail specification for silicon medium speed switching rectifier diodes, Type 2CZ302
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SJ 2719-1986
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Detail specification for silicon medium speed switching rectifier diodes, Type 2CZ204 and 2CZ205
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SJ 2720-1986
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Detail specification for silicon medium speed switching recitifier diodes, Type 2CZ304
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SJ 2721-1986
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Detail specification for silicon high speed switching rectifier diodes, Type 2CZ305
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SJ 2722-1986
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Detail specification for silicon high speed switching rectifier diodes, Type 2CZ306
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SJ 2723-1986
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Detail specification for silicon high speed switching rectifier diodes, Type 2CZ307
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SJ 2724-1986
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Detail specification for silicon high speed switching rectifier diodes, Type 2CZ308
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SJ 2725-1986
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Detail specification for general purpose silicon rectifier diodes, Type 2CZ311
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SJ 2726-1986
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Detail specification for general purpose silicon rectifier diodes, Type 2CZ312
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SJ 2727-1986
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Detail specification for general purpose silicon rectifier diodes, Type 2CZ313
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SJ 2728-1986
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Detail specification for silicon medium speed switching rectifier diodes, Type 2CZ314
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SJ 2729-1986
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Detail specification for silicon medium speed switching rectifier diodes, Type 2CZ315
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SJ 2730-1986
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Detail specification for silicon medium speed switching rectifier diodes, Type 2CZ316
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SJ 2731-1986
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Detail specification for silicon high speed switching rectifier fiodes, Type 2CZ317
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SJ 2732-1986
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Detail specification for silicon high speed switching rectifier diodes, Type 2CZ318
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SJ 1784-1981
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Detail specification for silicon single phase bridge rectifiers, Type QL1-9 and QL21-28
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SJ 1785-1981
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General procedures of measurement for silicon single phase bridge rectifiers, up to 5A
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SJ 1786-1981
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Method of measurement for forward voltage of silicon single phase bridge rectifiers, up to 5A
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SJ 1787-1981
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Method of measurement for rated peak working reverse voltage and reverse current of silicon single phase bridge rectifiers, up to 5A
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SJ 1788-1981
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Method of measurement for operational junction temperature of silicon single phase bridge rectifiers, up to 5A
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SJ 1789-1981
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Method of measurement for maximum operational frequency of silicon single phase bridge rectifiers, up to 5A
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SJ 1790-1981
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Method of measurement for overload current multiplication factor of silicon single phase bridge rectifiers, up to 5A
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SJ 1791-1981
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Method of measurement for insulation robustness of silicon single phase bridge rectifiers, up to 5A
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SJ 1795-1981
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Detail specification for 50-1000mA low current thyristors
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