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GB/T 35307-2023 | English | 189 |
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Granular polysilicon produced by fluidized bed method
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GB/T 35307-2023
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GB/T 35307-2017 | English | 239 |
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Granular polysilicon produced by fluidized bed method
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GB/T 35307-2017
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PDF similar to GB/T 35307-2023
Basic data Standard ID | GB/T 35307-2023 (GB/T35307-2023) | Description (Translated English) | Granular polysilicon produced by fluidized bed method | Sector / Industry | National Standard (Recommended) | Classification of Chinese Standard | H82 | Classification of International Standard | 29.045 | Word Count Estimation | 10,114 | Date of Issue | 2023-08-06 | Date of Implementation | 2024-03-01 | Older Standard (superseded by this standard) | GB/T 35307-2017 | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration |
GB/T 35307-2023: Granular polysilicon produced by fluidized bed method---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 29.045
CCSH82
National Standards of People's Republic of China
Replace GB/T 35307-2017
Fluidized bed granular silicon
Published on 2023-08-06
2024-03-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration Committee
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents"
Drafting.
This document replaces GB/T 35307-2017 "Fluidized Bed Granular Silicon". Compared with GB/T 35307-2017, except for structural adjustments and compilation
In addition to editorial changes, the main technical changes are as follows.
a) Changed the scope (see Chapter 1, Chapter 1 of the.2017 edition);
b) The method of indicating the grade of granular silicon has been changed (see Chapter 4, 4.1 of the.2017 edition);
c) Changed the technical index requirements for granular silicon (see 5.1, 4.2 of the.2017 edition);
d) Changed the particle size requirements for special grade granular silicon (see 5.2.1, 4.3.1 of the.2017 edition);
e) Changed the surface quality requirements for granular silicon (see 5.3, 4.4 of the.2017 edition);
f) The test method for silicon carbon content of particles has been changed (see 6.3, 5.3 of the.2017 edition);
g) The test method for silicon hydrogen content of particles has been changed (see 6.4, 5.4 of the.2017 edition);
h) The test method for granular silicon particle size has been changed (see 6.6, 5.6 in the.2017 version);
i) The sampling method has been changed (see 7.4.1, 6.4.1 of the.2017 version).
Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents.
This document is jointly developed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards
It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2).
This document was drafted by. Jiangsu Zhongneng Silicon Technology Development Co., Ltd., Shaanxi Nonferrous Tianhongruike Silicon Materials Co., Ltd., Nonferrous
Metal Technology and Economic Research Institute Co., Ltd., Qinghai Yellow River Upper Reaches Hydropower Development Co., Ltd. New Energy Branch, Shanghai Saift Semi-
Conductor Materials Co., Ltd., Asia Silicon Industry (Qinghai) Co., Ltd., Leshan GCL New Energy Technology Co., Ltd., Yichang CSG Silicon Materials Co., Ltd.
Ltd.
The main drafters of this document. Zhu Gongshan, Lan Tianshi, Jiang Limin, He Dongjiang, Wang Bin, Li Suqing, Xu Meng, Xu Yan, Li Pengfei, Liu Hui, Fu Xuguang,
Qin Rong, Liu Xiaoxia, Zong Bing, Wang Yongliang, Xie Yan, Tian Hongxian, Liu Wenming.
This document was first published in.2017 and this is the first revision.
Fluidized bed granular silicon
1 Scope
This document specifies the grades, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage and follow-up of fluidized bed granular silicon.
line documents and order form contents.
This document applies to granular polycrystalline silicon (hereinafter referred to as granular silicon) produced by the fluidized bed method using chlorosilane and silane gas as raw materials.
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations
For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to
this document.
GB/T 14264 Semiconductor material terminology
GB/T 14844 Semiconductor material grade representation method
GB/T 21649.2 Particle size analysis image analysis method Part 2.Dynamic image analysis method
GB/T 24581 Determination of Group III and V impurity content in silicon single crystals by low-temperature Fourier transform infrared spectroscopy
GB/T 31854 Inductively coupled plasma mass spectrometry measurement method for metal impurity content in silicon materials for photovoltaic cells
GB/T 35306 Determination of carbon and oxygen content in silicon single crystals by low-temperature Fourier transform infrared spectroscopy
GB/T 35309 Procedure for evaluation of granular polycrystalline silicon using zone melting method and spectral analysis method
GB/T 40566 Determination of silicon hydrogen content in granules by fluidized bed method Pulse heating inert gas fusion infrared absorption method
3 Terms and definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4 grades
The grade indication of granular silicon should comply with the regulations of GB/T 14844.
5 Technical requirements
5.1 Technical indicators
The grade of granular silicon and related technical indicators should comply with the provisions of Table 1.
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