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GB/T 30118-2013: Single crystal wafers for surface acoustic wave (SAW) device applications -- Specifications and measuring methods
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Single crystal wafers for surface acoustic wave (SAW) device applications -- Specifications and measuring methods
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GB/T 30118-2013
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Basic data | Standard ID | GB/T 30118-2013 (GB/T30118-2013) | | Description (Translated English) | Single crystal wafers for surface acoustic wave (SAW) device applications -- Specifications and measuring methods | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L21 | | Classification of International Standard | 31.140 | | Word Count Estimation | 32,381 | | Quoted Standard | GB/T 2828.1; GB/T 3352; GB/T 3505; GB/T 6618 | | Adopted Standard | IEC 62276-2005, MOD | | Regulation (derived from) | National Standards Bulletin No. 25 of 2013 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard specifies the synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO) and langasite (LGS), such as single crystal wafers. This standard applies to artificial quartz, lithium niobate (LN), lithium tantalate ( | GB/T 30118-2013: Single crystal wafers for surface acoustic wave (SAW) device applications -- Specifications and measuring methods
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Single crystal wafers for surface acoustic wave (SAW) device applications. Specifications and measuring methods
ICS 31.140
L21
National Standards of People's Republic of China
Surface acoustic wave (SAW) device with a single crystal wafer
Norms and measurement methods
Singlecrystalwafersforsurfaceacousticwave (SAW) deviceapplications-
(IEC 62276.2005, MOD)
Issued on. 2013-12-17
2014-05-15 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Table of Contents
Introduction Ⅲ
1 Scope 1
2 Normative references 1
3 Terms and definitions
4 Technical requirements 6
4.1 material 6
4.2 wafer 6
5 Sampling 10
5.1 Overview 10
5.2 Sampling 10
5.3 Sampling Plan 10
5.4 full inspection 10
6 10 test method
6.1 diameter 10
6.2 Thickness 11
Length 6.3 OF 11
6.4 OF directions 11
6.5 TV5 11
6.6 Warp 11
6.7 TTV 11
6.8 defect wafer front 11
6.9 INCLUSION 11
Roughness of the back 11 6.10
6.11 direction of the wafer 11
6.12 Curie temperature 11
6.13 lattice constants 11
7 packaging, labeling and identification, delivery conditions 12
7.1 Packaging 12
7.2 labeling and marking 12
7.3 Delivery conditions 12
8 Curie temperature measurement 12
8.1 Overview 12
8.2 DTA measurement method
8.3 dielectric constant 13
9 Measurement (Bond method) lattice constant of 13
10 with X- ray (direction finder) measuring the crystal plane angle (orientation) of 14
14 10.1 Measuring principle
10.2 Measurement Methods 15
10.3 wafer alignment measurements 15
Direction measuring 10.4 OF 15
Typical 10.5-cut wafer and the reference plane 15
11 front wafer inspection method 16
Appendix A (normative) single crystal piezoelectric Euler angle representation 17
Appendix B (Informative Appendix) SAW wafer production process 20
Annex C (informative) This standard and IEC 62276.2005 technical differences and their causes 26
Foreword
This standard was drafted in accordance with GB/T 1.1-2009 given rules.
This standard uses the translation method to modify the use of IEC 62276.2005 "Surface Acoustic Wave (SAW) device specifications and methods of measurement with the single crystal wafer."
The standard in the use of international standards has been modified. The technical differences between a single vertical line identifies the page in terms of which they are involved
Margin. It gives a list of the technical differences and their causes in Appendix C for reference.
This standard also made the following editorial changes.
--- Remove the IEC standard foreword.
--- In the reference standard, with GB/T 3505 "Geometrical Product Specifications (GPS) Surface texture Profile method - Terms, definitions and
Surface texture parameters "instead of ISO 4287; with GB/T 2828.1" Sampling procedures for inspection - Part 1. press reception quality
Limit (AQL) retrieval batch inspection sampling plan "instead of IEC 60410; with GB/T 3352" Norms and artificial quartz crystal
Guide "instead of IEC 60758; in addition, it has added GB/T 6618" wafer thickness and total thickness variation of test methods. "
--- In the description of the second reference plane and plane painted the same as FIG. 1, is incorrect, the processing should be higher than the second reference plane
Short face to distinguish.
The standard proposed by the Ministry of Industry and Information Technology of the People's Republic of China.
The standard frequency control and selection by the National Focal piezoelectric Standardization Technical Committee (SAC/TC182) devices.
This standard was drafted. China Electronics Technology Group, the twenty-sixth Research Institute, China Electronics Technology Group Deqing Huaying Electronics Co.,
Beijing Science and Technology Co., Ltd. Dan Jingguang.
The main drafters. Zhang Xiaomei, Jiang Chunjian, Wuzhao Gang, Wu Jianbo, Zhao Xiong Zhang, Zhou Yang Zhou.
Surface acoustic wave (SAW) device with a single crystal wafer
Norms and measurement methods
1 Scope
This standard specifies the synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO) and lanthanum gallium silicate (LGS) and other monocrystalline
Tablets.
This standard applies to synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO) and lanthanum gallium silicate (LGS) and other monocrystalline
sheet. These single crystal wafer is used as a surface acoustic wave (SAW) filters and resonators and other substrate materials.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan
(ISO 2859-1.1999, IDT)
GB/T 3352 Standard and artificial quartz crystal Guide (IEC 60758.2008, MOD)
GB/T 3505 Geometrical product specifications (GPS) Surface texture Profile method - Terms, definitions and surface texture parameters
(ISO 4287.1997, IDT)
GB/T 6618 wafer thickness and total thickness variation of test methods
3 Terms and Definitions
The following terms and definitions apply to this document.
3.1 SAW single crystal wafer crystal
3.1.1
Artificial quartz crystal syntheticquartzcrystal; QZ
Hydrothermally grown single crystal quartz crystal left-handed or right-handed. A single crystal of the formula α-SiO2.
NOTE. For further explanation, see the quartz crystal GB/T 3352.
3.1.2
Lithium niobate lithiumniobate; LN
Using the Czochralski method (Czochralski method) or other method of growing a single crystal chemical formula of a single crystal of LiNbO3 crystal.
3.1.3
Lithium tantalate lithiumtantalate; LT
Using the Czochralski method (Czochralski method) or other method of growing a single crystal chemical formula of a single crystal of LiTaO3 crystals.
3.1.4
Lithium tetraborate lithiumtetraborate; LBO
Using the Czochralski method (Czochralski method), V-Bridgman method (descent) or other method of growing a single crystal of the formula Li2B4O7
Crystal single crystal.
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