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Database: 189760 (1 Nov 2025)
GB/T 11068-2006 English PDF
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GB/T 11068-2006
: Gallium arsenide epitaxial layer -- Determination of carrier concentration voltage-capacitance method
Status: Valid
GB/T 11068: Evolution and historical versions
Standard ID
Contents [version]
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Standard Title (Description)
Status
PDF
GB/T 11068-2006
English
209
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Gallium arsenide epitaxial layer -- Determination of carrier concentration voltage-capacitance method
Valid
GB/T 11068-2006
GB/T 11068-1989
English
279
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3 days [Need to translate]
Gallium arsenide epitaxial layer--Determination of carrier concentration--Voltage-capacitance method
Obsolete
GB/T 11068-1989
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Basic data
Standard ID
GB/T 11068-2006 (GB/T11068-2006)
Description (Translated English)
Gallium arsenide epitaxial layer -- Determination of carrier concentration voltage-capacitance method
Sector / Industry
National Standard (Recommended)
Classification of Chinese Standard
H17
Classification of International Standard
77.040.01
Word Count Estimation
8,854
Date of Issue
2006-07-18
Date of Implementation
2006-11-01
Older Standard (superseded by this standard)
GB/T 11068-1989
Adopted Standard
DIN 50439, NEQ
Regulation (derived from)
National Standard Approval Announcement 2006 No.8 (Total No.95)
Issuing agency(ies)
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary
This standard specifies the GaAs epitaxial layer carrier concentration capacitance-voltage measurements. GaAs epitaxial layer applied to the base material measured in the carrier concentration.
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